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Method for preparing high-entropy boron ceramic surface material by microwave sintering

A technology of microwave sintering and ceramic surface, applied in the field of ceramics, can solve the problems of difficult production and application of aluminum nitride ceramic materials, long holding time, high sintering temperature, etc., to achieve accelerated reaction sintering process, short holding time, high sintering temperature low effect

Inactive Publication Date: 2021-05-07
ZHAOSHAN TECH BEIJING CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] However, since most nitride ceramic materials are solid-phase sintered, although additives can be used for liquid-phase sintering, the sintering temperature is still high, and the holding time still needs a long time, which is difficult to sinter, high energy consumption, and extremely high production efficiency. Low, such as the sintering of aluminum nitride ceramic materials, add 5% Y 2 o 3 Sintering aids, the traditional sintering method requires a sintering temperature of 1900°C and a sintering temperature of 24 hours to obtain a finished product of aluminum nitride ceramic material with good performance, which brings great difficulties to the production and application of aluminum nitride ceramic material

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0016] Aluminum nitride powder and 5% high-purity Y 2 o 3 After the powder is mixed, press it into a billet with a size of φ40×10mm, and place it in the auxiliary thermal insulation structure. The auxiliary thermal insulation structure is placed in the sintering chamber of an intermittent industrial microwave oven for microwave sintering, and the microwave frequency is 2.45 GHz. Introduce high-purity nitrogen protection, the pressure is normal pressure, the sintering temperature is 500 ° C, and the temperature is kept for 2 hours. After cooling, the obtained sintered body is the finished aluminum nitride ceramic material. It has been determined that the thermal conductivity of the prepared aluminum nitride ceramic material is 150W / m·k, and the density is 3.0g / cm 3 , XRD analysis phase structure is AlN, YAlO3.

Embodiment 2

[0018] Mix silicon nitride with a mass percentage of 58% and an appropriate amount of TiC, ZrN, AlN, etc. to make small balls with a diameter of Ф 10mm, and place them in the auxiliary thermal insulation structure. The auxiliary thermal insulation structure is placed in the sintering chamber of a continuous industrial microwave oven for microwave sintering, and the microwave frequency is 2.45GHz. Introduce high-purity nitrogen protection, the pressure is normal pressure, the sintering temperature is 800 ° C, and the temperature is kept for 2 hours. After cooling, the obtained sintered body is the finished silicon nitride composite ceramic material. After measurement, the density of the finished silicon nitride composite ceramic material is 3.71g / cm 3 , hardness 1520HV.

Embodiment 3

[0020] Aluminum nitride powder and 4% high-purity Y 2 o 3 After the powder is mixed, press it into a billet with a size of 50mm × 50mm × 10mm, and place it in the auxiliary thermal insulation structure. The auxiliary thermal insulation structure is placed in the sintering chamber of an intermittent industrial microwave oven for microwave sintering, and the microwave frequency is 2.45 GHz. The mixed gas protection of nitrogen and hydrogen is introduced, the pressure is normal pressure, the sintering temperature is 500 ° C, and the temperature is kept for 10 hours. After cooling, the obtained sintered body is the finished aluminum nitride ceramic material. It has been determined that the thermal conductivity of the prepared aluminum nitride ceramic material is 148W / m·k, and the density is 3.19g / cm 3 , do XRD analysis phase structure is AlN, YAlO3.

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Abstract

The invention discloses a method for preparing a high-entropy boron ceramic surface material by microwave sintering, which comprises the following steps of: putting nitride ceramic substrate blanks into an auxiliary heating insulation structure in a microwave sintering cavity, neatly stacking the nitride ceramic substrate blanks, arranging a graphite plate between the nitride ceramic substrate blanks, introducing a nitrogen atmosphere containing 7-10% of hydrogen, carrying out normal-pressure microwave sintering at the frequency of 2.45 GHz and at 500-3000 DEG C at a heating rate of 8-10 DEG C / min, carrying out heat preservation for 2-10 hours, carrying out furnace cooling until the temperature is 400 DEG C or less, opening the furnace, and taking out an obtained material to obtain the compact high-quality nitride ceramic substrate sintered body. The method has the beneficial effects that the reaction sintering process is accelerated, the nitride ceramic material is sintered under normal pressure at a relatively low temperature in a relatively short time, and the method has the characteristics of high temperature rise speed, low sintering temperature, short heat preservation time, relatively good performance, energy conservation and high production efficiency; and the method is suitable for large-scale production.

Description

technical field [0001] The invention relates to the technical field of ceramics, in particular to a method for preparing high-entropy boron ceramic surface materials by microwave sintering. Background technique [0002] Nitride ceramic materials are a new class of ceramic materials with a wide range of uses, including aluminum nitride ceramics, silicon nitride ceramics, boron nitride ceramics, etc., and there are countless composite materials. Because of its important position in the field of materials, Therefore, it has been paid more and more attention by material researchers and users. [0003] However, since most nitride ceramic materials are solid-phase sintered, although additives can be used for liquid-phase sintering, the sintering temperature is still high, and the holding time still needs a long time, which is difficult to sinter, high energy consumption, and extremely high production efficiency. Low, such as the sintering of aluminum nitride ceramic materials, ad...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/581C04B35/584C04B35/622
CPCC04B35/581C04B35/584C04B35/622C04B2235/3225C04B2235/3217C04B2235/3843C04B2235/3865C04B2235/3886C04B2235/602C04B2235/656C04B2235/6567C04B2235/658C04B2235/667C04B2235/77C04B2235/9607
Inventor 邰召山
Owner ZHAOSHAN TECH BEIJING CO LTD
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