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Method for producing isopropyl alcohol

A manufacturing method, the technology of isopropanol, which is applied in the field of isopropanol manufacturing, can solve the problems such as the reduction of semiconductor yield and achieve the effect of reducing the content

Pending Publication Date: 2021-05-07
TOKUYAMA CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0002] Metal impurities contained in various semiconductor treatment liquids used in the semiconductor manufacturing process are considered to cause a decrease in the yield of semiconductors, etc.

Method used

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  • Method for producing isopropyl alcohol
  • Method for producing isopropyl alcohol
  • Method for producing isopropyl alcohol

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0072] Hereinafter, although an Example demonstrates this invention more concretely, this invention is not limited to these Examples.

[0073] The amount of metal impurities and the amount of moisture were measured by the following methods.

[0074] (Measurement method for the amount of metal impurities)

[0075] Metal impurities contained in isopropanol were quantified using ICP-MS (Inductively Coupled Plasma Mass Spectrometry) as follows. Take about 500mL of isopropanol purified under the conditions described in Examples and Comparative Examples in an eggplant-shaped flask, use a rotary evaporator to concentrate and dry it, and then use about 25mL of 0.1N nitric acid to divide it into two times for recovery. For the recovered 0.1N nitric acid solution, the amount of metal eluted was quantified by ICP-MS. At this time, the concentration ratio was calculated from the ratio of the weight of isopropanol before concentration to the weight of recovered 0.1N nitric acid solution,...

Embodiment 2

[0115] As shown in Table 1, the same operation as in Example 1 was performed except that the filtration conditions in the filtration step were changed. The contents of iron, chromium, and nickel in isopropanol after the filtration step are shown in Table 2, and the contents of specific organic impurities are shown in Table 3.

Embodiment 3

[0117] The operation similar to Example 1 was performed except having changed the filtration conditions of a filtration process as shown in Table 1, without implementing a pre-filtration process. The contents of iron, chromium, and nickel in isopropanol after the filtration step are shown in Table 2, and the contents of specific organic impurities are shown in Table 3.

[0118]

[0119] Except having changed the filtration conditions of a filtration process as shown in Table 1, the same operation as Example 1 was performed. The contents of iron, chromium, and nickel in isopropanol after the filtration step are shown in Table 2, and the contents of specific organic impurities are shown in Table 3.

[0120]

[0121] The operation similar to Example 1 was performed except having changed the filtration conditions of a filtration process as shown in Table 1, without implementing a pre-filtration process. The contents of iron, chromium, and nickel in isopropanol after the filtr...

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Abstract

A method for producing isopropyl alcohol is provided in which propylene is hydrated directly with water to produce isopropyl alcohol. The method includes a distillation step in which crude isopropyl alcohol is distilled; and a filtration step in which the isopropyl alcohol obtained in the distillation step is filtered through a filter having an ion-exchange group.

Description

technical field [0001] The present invention relates to the manufacture method of isopropanol. Background technique [0002] Metal impurities contained in various semiconductor processing liquids used in the semiconductor manufacturing process are considered to cause a decrease in the yield of semiconductors and the like. Therefore, in order to improve the yield, various methods have been employed so far to reduce the metal impurities contained in the processing liquid for semiconductors. In recent years, with the miniaturization of semiconductor design rules, it is required to further reduce metal impurities. In particular, in semiconductor design rules with a line width of 20 nm or less, it is required to manage the amount of metal impurities at the ppt level. [0003] The metal impurities contained in the semiconductor treatment liquid are roughly divided into two types: metal impurities mixed in the manufacturing process of the semiconductor treatment liquid; and metal ...

Claims

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Application Information

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IPC IPC(8): C07C29/76B01D61/14B01D69/00C07C29/04C07C29/80C07C31/10
CPCB01D61/14B01D69/00C07C29/04C07C29/80C07C31/10C07C29/76
Inventor 濑良彬品川正志石附正成
Owner TOKUYAMA CORP
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