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Silicon carbide MOSFET device and cellular structure thereof

A silicon carbide and device technology, applied in semiconductor devices, electric solid state devices, semiconductor/solid state device components, etc., can solve the problems of increased stray inductance, decreased electrical performance of modules, and increased cost of module packaging, so as to reduce parasitic inductance. Capacitance, reduce leakage current, improve the effect of bipolar injection effect

Active Publication Date: 2021-05-11
ZHUZHOU CSR TIMES ELECTRIC CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, anti-parallel MOSFET devices and SBD at the chip level will increase the manufacturing cost of the module package, and cause an increase in stray inductance due to the introduction of additional bonding wires, resulting in a decrease in the electrical performance of the module

Method used

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  • Silicon carbide MOSFET device and cellular structure thereof
  • Silicon carbide MOSFET device and cellular structure thereof
  • Silicon carbide MOSFET device and cellular structure thereof

Examples

Experimental program
Comparison scheme
Effect test

no. 1 example

[0067] figure 2 It is a schematic diagram of the cell structure of a split-gate Schottky diode (SBD, hereinafter referred to as SBD) embedded silicon carbide MOSFET device. Such as figure 2 As shown, it includes: first conductivity type substrate 2, first conductivity type drift region 3, Schottky metal 4, polysilicon gate 5, gate insulating layer 6, second conductivity type well region 7, first conductivity type Source region 8 , second conductivity type enhancement region 9 , source metal 10 , and drain metal 11 .

[0068] image 3 It is a schematic diagram of Schottky metal and source metal interconnection and isolation from polysilicon gate. Such as image 3 As shown, it includes: first conductivity type substrate 2, first conductivity type drift region 3, Schottky metal 4, polysilicon gate 5, gate insulating layer 6, second conductivity type well region 7, first conductivity type Source region 8 , second conductivity type enhanced region 9 , source metal 10 , drain...

no. 2 example

[0103] Figure 4 It is a schematic diagram of the inverted trapezoidal groove structure of the cell structure of the silicon carbide MOSFET device. The contents of this embodiment and the first embodiment are basically the same, the difference lies in the following contents:

[0104] The shape of the main groove where the Schottky metal is located is not only a rectangle, but also an isosceles trapezoid, an isosceles triangle, a semicircle, a semiellipse, or other symmetrical geometric shapes.

[0105] In addition, the present invention also sets the second conductivity type shielding layer 14 in the local area where the Schottky metal is in contact with the drift region, which reduces the leakage current when the Schottky junction is reverse biased and improves the electrical performance of the device.

[0106] In the cell structure of the silicon carbide MOSFET device, in this embodiment, a P-type shielding layer is provided in the area where the sidewall of the main trench...

no. 3 example

[0109] Figure 5 It is a schematic diagram of a trench silicon carbide MOSFET device with integrated SBD. Such as Figure 5 As shown, it includes: first conductivity type substrate 2, first conductivity type drift region 3, Schottky metal 4, polysilicon gate 5, gate insulating layer 6, second conductivity type well region 7, first conductivity type Source region 8 , second conductivity type enhanced region 9 , source metal 10 , drain metal 11 , source block metal 12 , and interlayer dielectric 13 .

[0110] The first conductivity type substrate 2 in this specification may include various semiconductor elements, such as silicon or silicon germanium of single crystal, polycrystalline or amorphous structure, and may also include mixed semiconductor structures, such as silicon carbide, gallium nitride, Indium phosphide, gallium arsenide, alloy semiconductors or combinations thereof are not limited herein. The first conductivity type substrate 2 in this embodiment is preferably ...

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Abstract

The invention discloses a cellular structure of a silicon carbide MOSFET device. The cellular structure comprises a first conductive type drift region located above a first conductive type substrate; a main groove is formed in the surface of a first conduction type drift region, Schottky metal is arranged on the bottom and the side wall of the main groove, a second conduction type well region is arranged in the surface of the first conduction type drift region and on the periphery of the main groove, a source region is arranged in the surface of the well region, and source electrode metal is arranged on the source region. The grid insulating layer and the grid which are split into two parts are arranged on one side, close to the main groove, of the source region, the well region and the first conduction type drift region. By integrating the SBD in the cell of the silicon carbide MOSFET device, the opening of the PIN diode in the MOSFET device is effectively inhibited, the bipolar injection effect is improved, and the long-term use reliability of the MOSFET device is improved; and meanwhile, the Schottky metal and the source electrode metal are effectively arranged, so that an SBD does not need to be additionally packaged when the module is packaged, the packaging cost is reduced, and the stray inductance is reduced.

Description

technical field [0001] The invention relates to the technical field of power semiconductor devices, in particular to a split gate silicon carbide MOSFET device integrating SBD and a cell structure of the silicon carbide MOSFET device. Background technique [0002] Silicon carbide (SiC) is a new wide-bandgap semiconductor material with excellent physical, chemical and electrical properties. For example, the breakdown electric field strength of silicon carbide is 10 times that of traditional silicon, and the thermal conductivity is 3 times that of silicon. This makes Silicon carbide is very attractive and promising in power semiconductor devices, especially in high-power and high-temperature applications. [0003] SiC bipolar devices are limited by the manufacturing defects of SiC material substrates, and there is a phenomenon of "bipolar degradation", which leads to increased voltage drop and reverse bias leakage of SiC bipolar devices during long-term use. The increase in c...

Claims

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Application Information

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IPC IPC(8): H01L27/07H01L23/552H01L29/423H01L29/47
CPCH01L27/0727H01L23/552H01L29/42356H01L29/47H01L27/07H01L29/7806H01L29/7813H01L29/1608H01L29/0619H01L29/0696H01L29/063H01L29/1095
Inventor 王亚飞戴小平李诚瞻唐龙谷陈喜明王彦刚
Owner ZHUZHOU CSR TIMES ELECTRIC CO LTD
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