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Mid-infrared superconducting nanowire single-photon detector

A single-photon detector and superconducting nanowire technology, which is applied in the field of photon detection, can solve the problems of difficult application of fiber-coupled SNSPD and less research on superconducting thin film materials, and achieve the effect of effective preparation

Active Publication Date: 2021-05-14
NANJING UNIV
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Problems solved by technology

[0011] The present invention proposes a mid-infrared superconducting nanowire single-photon detector in order to solve the problems of less research on superconducting thin-film materials of superconducting nanowire single-photon detectors in the prior art, and the difficulty of applying fiber-coupled SNSPD technology to mid-infrared SNSPD. Detector, in order to achieve the above object, the present invention adopts the following technical solutions

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[0027] In order to make the purpose, technical solution and advantages of the present invention clearer, the technical solution of the present invention will be specifically described below in conjunction with the accompanying drawings.

[0028] Superconducting nanowire structures such as figure 1 As shown, it includes a substrate, a superconducting nanowire, and an anti-oxidation layer. The superconducting nanowire is located on the surface of the substrate, and the anti-oxidation layer is located on the surface of the superconducting nanowire; the substrate is made of silicon or silicon nitride or silicon oxide or magnesium oxide. The thickness is 300-650 μm, and this embodiment adopts silicon nitride, and the thickness is 350 μm; the superconducting nanowire adopts Mo and Si compounds, the thickness is 3-10nm, the line width is 20-50nm, the period is 50-300nm, and the shape is meander Sinuous structure, the photosensitive area is 1-10000μm 2 .

[0029] This example figu...

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Abstract

The invention discloses a mid-infrared superconducting nanowire single-photon detector. An amorphous or polycrystalline superconducting thin film containing Mo and Si is prepared into a superconducting nanowire to serve as a photosensitive surface of the detector by adopting an electron beam photoetching technology and a reactive ion etching technology, so that effective preparation of a mid-infrared SNSPD is realized; a mid-infrared light source, an adjustable attenuator, a collimator, a band-pass filter, a dilution refrigerator, a photosensitive surface, a bias device, an amplifier and a counter are adopted to form a detector, and a free space coupling technology is adopted, so that the problem of optical fiber coupling mid-infrared SNSPD is effectively solved; photons of the mid-infrared band are emitted and received, the number of photons reaching the photosensitive surface in unit time is calculated, and a foundation is laid for effectively calculating the quantum detection efficiency of the mid-infrared SNSPD.

Description

technical field [0001] The invention relates to the technical field of photon detection, in particular to an infrared photon detection technology. Background technique [0002] Mid-infrared radiation is defined as having a wavelength between 2.5-25 μm or 400-4000 cm -1 The electromagnetic wave of the wave number, the mid-infrared single-photon detection technology is one of the key technologies in the infrared field. The fluorescence wavelengths emitted by many biomolecules are in the mid-infrared band, and the signals are extremely weak, almost reaching the single-photon level. In the field of infrared astronomical detection, the latest infrared astronomical telescopes under construction in the world, such as the "Origin" astronomical telescope, have increased the noise equivalent power requirements of mid-infrared detectors to 10 -25 W / Hz 1 / 2 order of magnitude. It can be seen that mid-infrared single-photon detectors have extremely important application value and cons...

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Application Information

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IPC IPC(8): G01J11/00H01L39/12B82Y30/00B82Y40/00
CPCG01J11/00B82Y30/00B82Y40/00H10N60/85H10N60/855
Inventor 张蜡宝陈奇葛睿李飞燕张彪靳飞飞韩航康琳吴培亨
Owner NANJING UNIV
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