High-entropy metal glass protective coating and preparation method thereof
A technology of metallic glass and protective coating, which is applied in the direction of metal material coating process, coating, measuring distance, etc., and can solve problems such as enhancement
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Embodiment 1
[0032] Choose a sticking area of 2 cm2 Al target material of single crystal silicon wafer, the bonding area is 2 cm 2 The Zr-Fe-Nb-Cr combination target of single crystal silicon wafer was used as the sputtering target, and the single crystal silicon wafer was used as the coating substrate, and ultrasonic treatment was performed with acetone, alcohol, and deionized water for 20 minutes in sequence, and then a high-purity Blow dry with a nitrogen air gun for later use; when the vacuum degree of the chamber reaches 5×10 -4 It begins to deposit when it is about mbar, and the area will be 2 cm 2 The Al target of the single crystal silicon wafer is connected to the target position connected to the direct current (DC) power supply, and the area of the Al target is 2 cm 2 The Zr-Fe-Nb-Cr combination target of single crystal silicon wafer is connected to the target position connected with the radio frequency (RF) power supply.
[0033] When the air pressure in the chamber reache...
Embodiment 2
[0036] Choose a paste area of 3 cm 2 Al target material of single crystal silicon wafer, the attachment area is 3 cm 2 The Zr-Ta-Nb-Cr combination target of single crystal silicon wafer was used as the sputtering target, and the single crystal silicon wafer was used as the coating substrate, which was ultrasonically treated with acetone, alcohol, and deionized water for 20 minutes, and then treated with high-purity Blow dry with a nitrogen air gun for later use; when the vacuum degree of the chamber reaches 5×10 -4 Deposition begins at around mbar. Will stick with an area of 3 cm 2 The Al target material of the single crystal silicon wafer is connected to the target position connected with the direct current (DC) power supply. Will stick with an area of 3 cm 2 The Zr-Ta-Nb-Cr combination target of single crystal silicon wafer is connected to the target position connected with the radio frequency (RF) power supply.
[0037] The air pressure in the chamber reaches 5×1...
Embodiment 3
[0040] Choose a sticking area of 4 cm 2 Al target material of single crystal silicon wafer, the bonding area is 4 cm 2 The Zr-Fe-Nb-Cr combination target of single crystal silicon wafer was used as the sputtering target, and the single crystal silicon wafer was used as the coating substrate, and ultrasonic treatment was performed with acetone, alcohol, and deionized water for 20 minutes in sequence, and then a high-purity Blow dry with a nitrogen air gun for later use; when the vacuum degree of the chamber reaches 5×10 -4 Deposition begins at around mbar. Will stick with an area of 4 cm 2 The Al target material of the single crystal silicon wafer is connected to the target position connected with the direct current (DC) power supply. Will stick with an area of 4 cm 2 The Zr-Fe-Nb-Cr combination target of single crystal silicon wafer is connected to the target position connected with the radio frequency (RF) power supply.
[0041] The air pressure in the chamber reac...
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Abstract
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