Method for preventing and treating corn armyworms by adopting nano silicon quantum dots

A technology of nano-silicon quantum dots and corn armyworm, which is applied in the fields of pest control, nanotechnology, chemical instruments and methods, can solve problems such as environmental pollution, heavy metal toxicity, etc. The effect of increasing the amount and increasing the content of total phenols

Active Publication Date: 2021-05-28
JIANGNAN UNIV
View PDF13 Cites 6 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although metal-based nanoparticles have a high insecticidal effect, the release of large doses of metal-based nanoparticles (such as ...

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for preventing and treating corn armyworms by adopting nano silicon quantum dots
  • Method for preventing and treating corn armyworms by adopting nano silicon quantum dots
  • Method for preventing and treating corn armyworms by adopting nano silicon quantum dots

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0035] A preparation method of nano-silicon quantum dots, comprising the steps of:

[0036] Weigh 2.3g of ascorbic acid and dissolve it in 8.0mL of water, then add 2.0mL of N-aminoethyl-3-aminopropylmethyldimethoxysilane, mix well at 80°C, and then stir in a water bath at 80°C for 8h to react; After the reaction, use a dialysis bag (1kDa, molecular weight cut-off) to remove excess reactants; then the solution after dialysis was centrifuged at 4°C, 10000r / min for 20min; the precipitate was dried to obtain nano-silicon quantum dots.

[0037] The size of the nano-silicon quantum dots obtained is 5nm, and the shape is spherical (such as figure 1 ), the surface has functional groups such as -OH and -NH ( figure 2 ), the hydrated diameter is about 42.9nm, and the surface charge is 10.6eV.

Embodiment 2

[0039] A method for controlling corn armyworm using nanometer silicon quantum dots, comprising the steps of:

[0040] (1) Disinfect corn seeds (Suyu 29) from Jiangsu Academy of Agricultural Sciences in 5% sodium hypochlorite solution for 10 minutes, then rinse with deionized water 3 times for disinfection;

[0041] (2) After the disinfection is completed, soak the corn seeds in deionized water for 4 hours, then put the corn seeds into a petri dish with damp filter paper, cultivate them under dark conditions in the greenhouse, and spray water regularly every day;

[0042] (3) After cultivating for 5 days, select the corn seeds that germinate evenly, and transfer to the pots and pots that 1.0Kg of soil is housed to grow;

[0043](4) When the corn seedling grows to three leaves and one heart, the aqueous solution 20mL of the nano-silicon quantum dot (embodiment 1) of 50mg / L is sprayed on the leaf surface; Worm (Keyun Biology), the growth and development of armyworm were evaluate...

Embodiment 3

[0046] Adjust the concentration of the aqueous solution of nano-silicon quantum dots (embodiment 1) in embodiment 2 to be 10, 150mg / L, and others are consistent with embodiment 2.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Sizeaaaaaaaaaa
Surface chargeaaaaaaaaaa
Login to view more

Abstract

The invention discloses a method for preventing and treating corn armyworms by adopting nano silicon quantum dots, and belongs to the technical field of crop pest nano material prevention and treatment. According to the method for preventing and treating corn armyworms by adopting the nano silicon quantum dots, the nano silicon quantum dots are prepared into an aqueous solution of the nano silicon quantum dots, and then the aqueous solution of the nano silicon quantum dots is applied to roots or leaves of plants as a plant fertilizer; wherein the concentration of the aqueous solution of the nano silicon quantum dots is 10-150mg/L; and the size of the nano silicon quantum dots is 3-8 nm. According to the method, the effect of a conventional silicon fertilizer on plant stress resistance is improved, the direct insecticidal effect of nano silicon is directly improved, and the chemical defense capability of the nano silicon on plants is improved; the optimal spraying amount of the nano silicon quantum dots is determined by spraying the nano silicon quantum dots with different concentrations on the growth and development experiment of armyworms.

Description

technical field [0001] The invention relates to a method for controlling corn armyworm by using nanometer silicon quantum dots, and belongs to the technical field of crop pest nanometer material prevention and control. Background technique [0002] Armyworm (Mythimna separata) belongs to Lepidoptera Noctuidae. It is a typical seasonal long-distance migratory pest, and it is also a major pest of food crops in my country and other Asian and Australian countries. It has a wide range of occurrence, multiple generations of damage, There are many types and tissues of the affected crops, heavy yield loss and long history of damage. At present, our country mainly relies on chemical pesticides in the prevention and control of armyworms, but the unscientific application of traditional pesticides has increasingly prominent negative effects on the ecological environment, human health and biodiversity. For example, the extensive use of chemical pesticides has caused serious air, soil and...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): A01N59/00A01P7/04A01P21/00C01B33/027C01B33/037B82Y40/00
CPCA01N59/00C01B33/027C01B33/037B82Y40/00C01P2004/04C01P2004/64C01P2002/82
Inventor 王震宇肖正高王传洗乐乐
Owner JIANGNAN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products