Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Photoelectrochemical photodetector and preparation method thereof

A photodetector and photoelectrochemical technology, applied in photometry, photometry using electric radiation detectors, optical radiation measurement, etc., can solve the problem of poor photodetection performance and inability to adapt to mass production of full-spectrum photodetectors, etc. problem, to achieve the effect of high applicability and reduce manufacturing cost

Active Publication Date: 2022-05-13
UNIV OF SCI & TECH OF CHINA
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In order to solve the problems of poor overall photodetection performance of the above-mentioned traditional MSM or planar thin-film photodetectors, and the inability to adapt to the large-scale production of full-spectrum photodetectors, the present invention proposes a photoelectrochemical photodetector and its preparation method

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Photoelectrochemical photodetector and preparation method thereof
  • Photoelectrochemical photodetector and preparation method thereof
  • Photoelectrochemical photodetector and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0047] One aspect of the present invention proposes a novel solar-blind ultraviolet photoelectrochemical photodetector, Figure 1A is a schematic diagram of AlGaN nanowires in an embodiment of the present invention. The novel solar-blind ultraviolet photoelectrochemical photodetector includes a photocathode, and the photocathode includes a substrate 110, and also includes an AlGaN nanowire 120 grown on the surface of the substrate 110, thereby constituting the photocathode of the novel photoelectrochemical photodetector proposed by the present invention The basic structure of 100. Wherein, GaN-based nanowires include n-type GaN-based nanowires and p-type GaN-based nanowires. Those skilled in the art should understand that the nanowire structure can be regularly arranged, such as nanowire structures prepared by directional growth, and can also include irregularly arranged nanowire structures. The so-called "rule" can be understood as whether the arrangement of nanowires has Pe...

Embodiment 2

[0073] The present invention proposes a gallium nitride-based material nanowire structure applied to photodetectors, and correspondingly proposes a preparation method for the material structure, overcomes technical difficulties in this field, and achieves a breakthrough and unexpected technology Effect. Among them, those skilled in the art should understand that the nanowire structure can be a regular arrangement, such as a nanowire structure prepared by directional growth, or an irregular arrangement of nanowire structures. The so-called "rule" can be understood as the arrangement of nanowires. Periodic; the so-called "irregular" can be understood as the arrangement of the nanowires does not have periodicity, and can also be understood as the length, diameter, spacing between adjacent nanowires, nanometers, etc. The growth angle of the line (relative to the substrate) is inconsistent and irregular. In addition, in the introduction of gallium nitride-based materials in the pr...

Embodiment 3

[0100] One aspect of the present invention proposes a sun-blind ultraviolet photoelectrochemical photodetector, such as Figure 8A It is a schematic diagram of a solar-blind ultraviolet photoelectrochemical photodetector GaN-based nanohole array in an embodiment of the present invention, and Figure 8BIt is a schematic diagram of a solar-blind ultraviolet photoelectrochemical photodetector modified GaN-based nanopore array of co-catalyst nanoparticles in an embodiment of the present invention. The photodetector includes a photoelectrode, and the photoelectrode includes a substrate 810 and a substrate 810. The array 830 of GaN-based nanoholes 840 formed on the surface of the substrate 810 constitutes the basic structure 800 of the photocathode of the novel photoelectrochemical photodetector proposed by the present invention.

[0101] Among them, those skilled in the art should understand that the nanopore structure can be a regular arrangement, such as a nanopore structure prep...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
lengthaaaaaaaaaa
Login to View More

Abstract

The invention discloses a method for preparing a novel photoelectrochemical photodetector, which is characterized in that the method includes: selecting gallium nitride-based compound semiconductor material components according to the wavelength of light to be detected by the photodetector; The components form gallium nitride-based nanowires on the surface of the substrate; the gallium nitride-based nanowires are uniformly modified with co-catalyst nanoparticles; the gallium nitride-based nanowires with modified co-catalyst nanoparticles are encapsulated to obtain a photoelectrode and preparing the photoelectrochemical photodetector using the photoelectrode. Photodetectors for different light detection scenarios can be produced only by adjusting the content of components in the nanowires during the growth process of the nanowires. Finally, a new full-band photoelectrochemical photodetector with high responsivity, fast response, economy and environmental protection, and self-supply energy was prepared by the same process. The inventive application of gallium nitride-based nanowires in the research of photoelectrochemical photodetectors is of great significance.

Description

technical field [0001] The invention relates to the technical field of photoelectrochemical photodetectors, in particular to a photoelectrochemical photodetector and a preparation method thereof. Background technique [0002] Photodetectors (i.e., light detectors), devices that capture light signals and convert them into electrical signals, are widely used in imaging, communication, sensing, computing, emerging wearable devices, and space domain detection. Photodetectors are widely used in various fields of military and national economy. In the visible or near-infrared band, it is mainly used for ray measurement and detection, industrial automatic control, photometry, etc.; in the infrared band, it is mainly used for missile guidance, infrared thermal imaging, infrared remote sensing, etc.; in the ultraviolet band, it is mainly used for flame detection and missile alarm. , ozone monitoring and non-line-of-sight optical communication, etc. [0003] Most of today's photodete...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G01J1/42G01J1/48B82Y15/00B82Y20/00B82Y40/00
CPCG01J1/42G01J1/48B82Y15/00B82Y20/00B82Y40/00
Inventor 孙海定汪丹浩方师张伟
Owner UNIV OF SCI & TECH OF CHINA
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com