Unlock instant, AI-driven research and patent intelligence for your innovation.

Composite material and its preparation method and light-emitting diode

A technology of composite materials and polymers, applied in the manufacture of semiconductor/solid-state devices, electric solid-state devices, semiconductor devices, etc., can solve the problems of unbalanced electron transport rate and hole transport rate, and improve recombination efficiency and luminous purity, The effect of improving quantum efficiency and improving work efficiency

Active Publication Date: 2022-04-29
TCL CORPORATION
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The main purpose of the present invention is to provide a composite material and its preparation method for use in the preparation of electron transport layers in light-emitting diodes, aiming to solve the technical problem of unbalanced electron transport rate and hole transport rate in existing light-emitting diodes

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Composite material and its preparation method and light-emitting diode
  • Composite material and its preparation method and light-emitting diode
  • Composite material and its preparation method and light-emitting diode

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0044] The preparation method of the above-mentioned composite material is as follows.

[0045] Correspondingly, a preparation method of a composite material, such as figure 2 described, including the following steps:

[0046] S01, providing nanometer metal oxides, photosensitizers and polymerized monomers, said polymerized monomers comprising at least 1 hydroxyl group; performing said nanometer metal oxides, said polymerized monomers and said photosensitizers under light-proof conditions Mix to obtain a mixed solution;

[0047] S02, subjecting the mixed liquid to a photocuring reaction, so that the polymerizable monomers are polymerized to form polymers.

[0048] In step S01, the nanometer metal oxide and the polymerized monomer are basically the same as those described above, and will not be repeated here to save space.

[0049] Specifically, the nanometer metal oxide, the polymerized monomer and the photosensitizer are mixed under the condition of avoiding light to form...

Embodiment approach

[0053] As an embodiment, the photosensitizer is selected from benzophenone, 1-hydroxycyclohexyl phenone, 2,2-dimethoxy-2-phenylacetophenone (benzoin dimethyl ether), 4- Isopropylthioxanthone, 2-methylbenzophenone, 2,4-diethylthioxanth-9-one, 4-chlorobenzophenone, 4-isobutylphenyl-4' - one of methylphenyliodonium hexafluorophosphate, 4,4'-bis(dimethylamino)benzophenone and 2-ethylhexyl 4-(dimethylamino)benzoate. The above-mentioned photosensitizer has good light-induced cross-linking polymerization activity, can promote the cross-linking polymerization between the above-mentioned polymerized monomers, improve production efficiency, and does not affect the polymer formed by the composite of the nanometer metal oxide.

[0054] Specifically, in step S02, the mixed solution is subjected to a photocuring reaction, so that the polymerized monomers are polymerized to form a polymer. Since the formed polymer contains several hydroxyl groups, part or all of the hydroxyl groups in the p...

Embodiment 1

[0071] This embodiment provides a method for preparing a quantum dot light-emitting diode, comprising the following steps:

[0072] S11, providing an anode, and sequentially depositing a hole injection layer, a hole transport layer, and a quantum dot light-emitting layer on the anode;

[0073] S12, provide nanometer metal oxide ZnO ethanol solution (30mg / mL, 10mL), 0.01g photosensitizer benzophenone and polymerized monomer hydroxyethyl methacrylate (purity higher than 99.9%, 1mL), ZnO ethanol solution 1. The polymerized monomers are mixed under light-shielding conditions, stirred for 2 minutes, the solution is uniformly dispersed and fully dissolved, and then a photosensitizer is added to obtain a mixed solution; the mixed solution is inkjet printed on the quantum dot light-emitting layer, and then Irradiate with ultraviolet light for 10 minutes, then raise the temperature to 80°C at a rate of 5°C / s, and anneal for 30 minutes to prepare the electron transport layer;

[0074] ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
sizeaaaaaaaaaa
Login to View More

Abstract

The invention belongs to the field of display technology, and in particular relates to a composite material, a preparation method thereof and a light emitting diode. The composite material provided by the invention includes: nanometer metal oxide and a polymer, the polymer contains several hydroxyl groups, and some or all of the hydroxyl groups connect the nanometer metal oxide with hydrogen bonds. When the composite material is applied to prepare the electron transport layer in the light-emitting diode, it can effectively control the electron transport rate, balance the electron transport rate and the hole transport rate, and improve the recombination efficiency and luminous purity of electrons and holes in the quantum dot light-emitting layer. , to improve the external quantum efficiency of the device.

Description

technical field [0001] The invention belongs to the field of display technology, and in particular relates to a composite material, a preparation method thereof and a light emitting diode. Background technique [0002] Quantum dot electroluminescence technology is a new type of solid-state lighting technology. It has the advantages of low cost, light weight, fast response speed, and high color saturation. It has broad development prospects and has become an important research direction for the new generation of LED display devices. one. [0003] The luminescence principle of quantum dot light emitting diodes (Quantum Dot Light Emitting Diodes, QLED) is that the intercepted electrons and holes are injected into the quantum dot luminescent layer to perform radiative recombination and luminescence. The carrier mobility and energy level structure directly determine the efficiency and balance of carrier injection, as well as the blocking effect on reverse carriers, which play a ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/56H01L51/54H01L51/50
CPCH10K71/12H10K85/141H10K50/115
Inventor 宋音洁曹蔚然钱磊
Owner TCL CORPORATION