Method and device for forming plasma-resistant coating, part and plasma processing device

Abstract

The invention discloses a method for forming a plasma-resistant coating on a part, a device for forming the coating, the part and a processing device. The device for forming the coating comprises a vacuum cavity, a first coating material source, a second coating material source, a part, a first excitation device and a second excitation device, the first coating material source, the second coating material source and the part are located in the vacuum cavity, the first coating material source comprises oxygen atoms and yttrium atoms, the second coating material source comprises one of a yttrium fluorine compound, an aluminum oxygen compound or a zirconium oxygen compound, the first excitation device is used for exciting the yttrium atoms and the oxygen atoms in the first coating material source, the second excitation device is used for exciting atoms in the second coating material source, and the yttrium atoms and the oxygen atoms excited in the first coating material source and the atoms excited in the second coating material source are subjected to chemical reaction to form a plasma-resistant coating comprising yttrium-based multi-element metal oxide or yttrium-based oxyfluoride with a stable phase on the part. The coating formed by the device is relatively high in plasma corrosion resistance.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to a method, a device, a component and a plasma treatment device for forming a plasma-resistant coating on a component. Background technique [0002] Plasma etching processes play a key role in the field of integrated circuits. Relatively high plasma corrosion resistance is required for components that are exposed to the harsh corrosive environment within the plasma etch chamber. For this reason, some patents propose to use yttrium oxide or yttrium fluoride plasma-resistant coating to coat the surface of the inner parts of the plasma etching chamber to protect the workpiece, which produces a good effect of plasma corrosion resistance. However, with the continuous advancement of high-end semiconductor manufacturing processes (below 10nm), the proportion of F / O plasma used in the plasma etching process continues to increase, and the plasma etching performance is continuously enhanced. A...

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Problems solved by technology

[0003] In response to the above requirements, the protective effect of yttrium oxide and yttrium fluoride is limited, and cannot further meet the actual needs, so how to provide a CF-resistant 4 and O 2 Plasma corrosion, long service life, high surface density, and plasma-resistant coating materials that can maintain the stability of the cavity etching environment have become an important development direction for further improving plasma etching performance

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