Electron source package

Abstract

The invention provides an electron source package, which comprises a substrate, a sealing cover and an electron source. A power supply is arranged in the substrate, the sealing cover is arranged on the substrate and forms a closed space with the substrate, and the electron source is arranged on the substrate in the closed space. The electron source comprises a substrate, a nanowire harness, an electrode ring, an anti-reflection layer and a protective layer. The substrate is arranged on the substrate and grounded, the nanowire harness is arranged on the substrate, the electrode ring is arranged above the nanowire harness and electrically connected with a substrate power source, the anti-reflection layer is arranged on the electrode ring, and the protective layer is arranged on the anti-reflection layer.

Description

technical field [0001] The invention relates to a vacuum electron source packaging technology, in particular to an electron source packaging technology. Background technique [0002] With the rise of nanotechnology, nanomaterials are playing an increasingly important role in many fields. The nanowire array structure is a new type of quasi-one-dimensional nanostructure, which has new physical or chemical properties different from thin film materials. The light absorption effect occurs when photons touch the nanoscale array on the surface, and the photons that are not absorbed but pass through will be absorbed due to reflection or refraction, and it is difficult to escape, forming a "photon capture effect", which improves the photon absorption effect. The absorption rate can further improve the quantum efficiency of the photocathode. [0003] Although the quantum efficiency is improved by adopting the nanowire array structure, in order to better meet the emission requirement...

AI Technical Summary

Problems solved by technology

[0003] Although the quantum efficiency is improved by using the nanowire array structure, in order to better meet the emission requirements of the electron source, the concentration of the electron beam emitted by the cathode of the AlGaN nanowire array can be further improved

At present, AlGaN nanowires use a single Al component. The incident light is irradiated on the nanowire array to generate electrons, and the single Al component has a large resistance to the transport of electrons in the photoemissive material. Therefore, the single-component AlGaN nanowires Arrays do not further improve photoemission performance of photocathode

In addition, the single Al component nanowire array has a disadvantage, that is, when a single nanowire forms an array, the electrons escaping from the side of the nanowire will be absorbed twice by the adjacent nanowires, resulting in an electron shielding effect.

The electrons escaped from the side can only be collected by the collection side on the top surface if they exit within the corresponding angle, otherwise they will be captured by the adjacent nanowires and cannot escape the array structure, thus reducing the photocathode density of the nanowire array. The collection efficiency of the electron beam may even cause divergence, so that the nanowire array photocathode cannot meet the requirements of the electron source for the concentration of the electron beam.

[0004] Now for heterojunction Al x Ga 1-x The proposed growth method of the N / GaN nanowire array structure mainly adopts the etching method, but etching will destroy the Al component content on the sidewall of the nanowire array, and the heterojunction Al obtained by etching x Ga 1- x The diameter of the N / GaN nanowire array is relatively large, and the degree of surface damage is relatively large, so it is urgent to obtain heterojunction Al with high growth quality by improving the growth method. x Ga 1-x Array of N / GaN nanowires

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