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Artificial sensory neuron structure based on multi-side gate synaptic device and preparation method thereof

A synaptic device, multi-side gate technology, applied in neural learning methods, neural architecture, biological neural network models, etc., to achieve the effect of reducing device energy consumption

Pending Publication Date: 2021-06-11
NANJING UNIV
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  • Summary
  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

[0006] Purpose of the invention: In view of the problem that the existing artificial sensory neuron structure can only realize one synapse device processing the voltage signal generated by one sensor device, the present invention provides an artificial sensory neuron structure based on a multi-side gate synapse device, which can realize The connection and signal processing of a synaptic device and more than two sensors; at the same time, the invention also provides a preparation method of the artificial sensory neuron structure

Method used

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  • Artificial sensory neuron structure based on multi-side gate synaptic device and preparation method thereof
  • Artificial sensory neuron structure based on multi-side gate synaptic device and preparation method thereof
  • Artificial sensory neuron structure based on multi-side gate synaptic device and preparation method thereof

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preparation example Construction

[0037] The preparation method of the above-mentioned artificial sensory neuron structure based on the multi-side gate synapse device is as follows: Figure 5 , including the following steps:

[0038] (1) Preparation of piezoelectric nanogenerator:

[0039] ① Spin-coating a piezoelectric material 3 on a substrate 1 covered with a bottom electrode 2 as a functional layer of a piezoelectric nanogenerator;

[0040] ② Depositing an upper electrode 4 on the functional layer obtained in step ① to obtain a piezoelectric nanogenerator;

[0041] (2) Preparation of synaptic devices

[0042] ③ Spin-coating an electrolyte material on the substrate 5 covered with the bottom electrode 6 as the gate dielectric 8 of the synaptic device;

[0043] ④ Depositing an oxide semiconductor on the surface of the gate dielectric 8 as the channel layer 9;

[0044] ⑤ Depositing source-drain electrodes 11, 12 and planar side gates 10 on the surface of the channel layer 9 to obtain a synaptic device;

...

Embodiment

[0048] To prepare the artificial sensory neuron structure based on the multi-side gate synaptic device of the present invention, the steps are as follows:

[0049] (1) Preparation of piezoelectric nanogenerators

[0050] Step 1, on the cleaned substrate covered with the bottom electrode, first coat a layer of polyvinylidene fluoride-trifluoroethylene solution with a mass fraction of 15%, pre-spin the glue at a speed of 600r / min for 20s, and then spin it at 900r / min Spin the glue at a speed of min for 40 seconds, and dry it at 80°C for 10 minutes; after performing this operation again, anneal the sample at 135°C for 3 hours; the whole experiment is carried out in a glove box filled with nitrogen;

[0051] Step 2, using thermal evaporation equipment, in a vacuum lower than 10 -4 Under the condition of Pa, aluminum metal is vapor-deposited as the upper electrode, with a thickness of about 30nm; the area range of the upper electrode is controlled by a mask.

[0052] (2) Preparat...

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Abstract

The invention discloses an artificial sensory neuron structure based on a multi-side grid synaptic device and a preparation method thereof. The artificial sensory neuron structure comprises at least two piezoelectric nano-generators used for external force induction and a synaptic device used for processing at least two voltage input signals, wherein the synaptic device is an electric double-layer transistor; the double-electrode-layer transistor takes an electrolyte material as a gate medium, takes an oxide semiconductor as a channel layer, and is provided with at least two plane side gates; and each piezoelectric nano generator is electrically connected to one side grid of the electric double-layer transistor. According to the artificial sensory neuron structure, the planar multi-side grid structure and the double-electric-layer coupling characteristic of the double-electric-layer transistor are fully exerted, and two or more sensors can be connected to different side grids of one transistor at the same time, so that induction and processing of various external signals are realized; the limitation that one synaptic device of a traditional artificial sensory neuron structure processes one sensing device signal is broken through.

Description

technical field [0001] The invention relates to an artificial sensory neuron structure and a preparation method thereof, in particular to an artificial sensory neuron device based on a multi-side gate synaptic device and a preparation method thereof, belonging to the field of neuromorphic engineering. Background technique [0002] The skin, the largest organ in the human body, has protective, regulatory, and sensory functions, contains various sensory receptors, and provides sensory information such as force, pain, shape, and texture. The skin senses external stimuli and transmits sensory information to the brain through afferent neurons, forming tactile memory, allowing the brain to remember the stimuli applied to the skin. To simulate, restore or even replace human skin, electronic skin must first have a sense of touch, that is, the basic function of sensing different external force stimuli and smoothly transmitting tactile signals just like human skin. No longer limited ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G06N3/06G06N3/063G06N3/04G06N3/08
CPCG06N3/061G06N3/063G06N3/04G06N3/08
Inventor 曾明月万青
Owner NANJING UNIV
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