Application of cesium-tungsten bronze as welding flux for welding sapphire
A cesium tungsten bronze, a technology using cesium tungsten bronze, applied in welding equipment, welding medium, welding equipment, etc., can solve the problems of large stress in welding structure, large difference in thermal expansion coefficient, and decrease in bending strength of joints
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[0045] Example 1
[0046] (1) Surface polishing treatment of the cropped sapphire wafer, so that the sapphire surface roughness RA is 3.000 nm.
[0047] (2) 55 wt% of chemical formula is CS 0.7 WO 3 The rhenthem tungsten bronze is mixed with 45 wt% ethanol to obtain a ruthenium tricycle.
[0048] (3) Apply the squid tungsten bronze slurry to the surface of sapphire to weld the surface, and the two sapphire is placed on the weld surface, and the pressure is applied, so that the medium of the cesium tungsten bronze in the weld is 30 μm;
[0049] (4) Using a molybdenum clamp, the blue weather is applied, and the pressure of 20N is applied to the solder, the heater is placed at a temperature of 800 ° C, and the temperature is 1050 nm at a rate of 5 ° C / min, and the laser spot has a diameter of 2 mm, and the power is 5000W. The infrared laser is irradiated at one side sapphire to the weld, and the irradiation time is 5s, and then the power of the infrared laser irradiation is lowered...
Example Embodiment
[0052] Example 2
[0053] (1) Surface polishing treatment of the cropped sapphire wafer, so that the sapphire surface roughness Ra is 4.000 nm.
[0054] (2) Chemical formula of 97 wt% is CS 0.8 WO 3 铯 Tungsten bronze mixed with 3 wt% ethanol to give rhentheal bronze slurry;
[0055] (3) Apply the squid tungsten bronze slurry to the surface of sapphire to weld the surface, and the two sapphire is placed on the weld surface, and the pressure is applied, so that the medium of the insecticate bronze in the weld is 80 μm;
[0056] (4) Using a molybdenum clamp, a sapphire is applied, and the pressure is applied to the solder blue west, and the heating target temperature is 1200 ° C, which is 1050 nm at 10 ° C / min, using a wavelength of 1050 nm, and the laser spot has a diameter of 10 mm. The power is 8000W. The infrared laser is irradiated through the sapphire, and the irradiation time is 30s, and then the power of the infrared laser irradiation is reduced by 200 W / s speed until the...
Example Embodiment
[0059] Example 3
[0060] (1) Surface polishing treatment of the cropped sapphire wafer, so that the surface roughness Ra of sapphire is 5.000 nm.
[0061] (2) Chemical formula of 97 wt% is CS 0.8 WO 3 铯 Tungsten bronze mixed with 3 wt% ethanol to give rhentheal bronze slurry;
[0062] (3) Apply the rhythm tungsten bronze slurry to the surface of sapphire to weld the surface, and the two sapphire is placed to be soldered, and the pressure is applied, so that the tungsten bronze thickness of the weld is 70 μm;
[0063] (4) Using a molybdenum clamp, the bluemeal is applied, and the pressure of the soldering blue should be applied to the pressure of 300N, and the heater heating target temperature is 700 ° C, which is 1050 nm at 8 ° C / min, using a wavelength of 1050 nm, and the laser spot has a diameter of 3 mm, and the power is 4000W. The infrared laser is irradiated through the sapphire, and the irradiation time is 20s, and then the power of the infrared laser irradiation is lower...
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