The invention discloses a preparation method of an enhanced CMOS sensor light emitting diode unit structure. The preparation method comprises the following steps: P-type wafer cleaning and surface oxide layer stripping, oxide layer coating, masking, configuring a square window for an oxide layer, high energy ion beam surface treatment, Si corrosion, masking and configuring the square window for the oxide layer, N-type doping, oxide layer coating, masking and oxide layer opening, P-type doing, oxide layer corrosion, silicide barrier layer coating, masking and opening, silicide coating, annealing, removeing unreacted silicide and barrier layer, nitrided layer coating, oxide layer coating, masking and configuring a lead contact hole, metal coating, chemical mechanical grinding, oxide layer coating, masking, oxide layer corrosion and wired metal coating. According to the preparation method of the enhanced CMOS sensor light emitting diode unit structure provided by the invention, the preparation process is simple, the quantum conversion efficiency can be enhanced, and the cost can be reduced.