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Method for eliminating thin film stress

A thin-film stress and thin-film technology, applied in the field of conformal optical components, can solve problems such as film cracking, affecting laser system performance, plastic deformation, etc., and achieve the effect of increasing types

Pending Publication Date: 2021-06-18
DALIAN INST OF CHEM PHYSICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Such high stress will cause elastic deformation of thin film optical components, and even plastic deformation in severe cases, resulting in cracking and peeling of the film
The deformation of optical components will have a greater impact on the beam quality of the laser, thus affecting the performance of the entire laser system

Method used

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  • Method for eliminating thin film stress

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0023] Example 1: Ta 2 o 5 Thin film stress properties

[0024] 1. Characterize the surface shape accuracy of the JGS1 substrate with a size of φ25.4×5mm, put it into an ion beam sputtering coating machine after cleaning and drying, set the single-layer film thickness to 500nm, and the coating material to be Ta 2 o 5 . The thin film deposition conditions are: the substrate temperature is 80°C, the method of reactive sputtering is adopted, the purity of the Ta target is 99.99%, and the vacuum is pumped to 8×10 -7 Torr.

[0025] 2. To Ta 2 o 5 To characterize the surface shape accuracy of the thin film, its size is 0.018λ, and brought into Stoney formula (5), to get Ta 2 o 5 film stress.

[0026] The relationship among substrate diameter, sagittal height and radius of curvature can be expressed as:

[0027]

[0028] where R is the radius of curvature, D s is the diameter of the substrate, and h is the height of the arrow.

[0029] The relationship between Yagao an...

Embodiment 2

[0042] Example 2: SiO 2 Thin film stress properties

[0043] 1. Characterize the surface shape accuracy of the JGS1 substrate with a size of φ25.4×5mm, put it into an ion beam sputtering coating machine after cleaning and drying, set the single-layer film thickness to 500nm, and the coating material to be SiO 2 . The thin film deposition conditions are: the substrate temperature is 80°C, the method of reactive sputtering is adopted, the purity of the Si target is 99.99%, and the vacuum is pumped to 8×10- 7 Torr.

[0044] 2. On SiO 2 The surface shape accuracy of the thin film is characterized, and its size is 0.032λ, and it is brought into the Stoney formula (5). For the specific derivation process, refer to step (2) of Example 1 to obtain SiO 2 film stress.

[0045] 3. On SiO 2 The annealing heat treatment was performed on the film. The annealing constant temperature was set at 80-600°C, the heating rate from room temperature to the annealing temperature was 100°C / h, an...

Embodiment 3

[0049] 1. According to relational formula (6) and (7) in embodiment 1 and 2, design multilayer film system is sub / HL ^16 / air, high and low refractive index coating materials are Ta 2 o 5 and SiO 2 , whose thicknesses are 197 nm and 115 nm, respectively.

[0050] Then, the surface shape accuracy of the JGS1 substrate with a size of φ25.4×5mm was characterized. After cleaning and drying, it was placed in an ion beam sputtering coating machine. The film deposition conditions were: the substrate temperature was 80°C, and the reactive sputtering method was used. The purity of the Ta target is 99.99%, vacuum pumped to 8×10 -7 Torr.

[0051] 2. Combining formulas (5), (6) and (7), the selected annealing temperature is 450 ° C, for Ta 2 o 5 / SiO 2 The multilayer film is annealed and heat-treated.

[0052] σ H (t H , T)t H +σ L (t L , T)t L =0 (4)

[0053] where t H , t L are the film thicknesses of high and low refractive index materials respectively, and T is the an...

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Abstract

The invention relates to a method for eliminating a thin film stress. A double-ion-beam sputter coating technology is adopted, and after thin film plating is completed on an optical substrate, a series of annealing heat treatment are carried out, thermodynamic characteristics of a coating material are combined, and annealing heat treatment parameters such as process conditions of an annealing temperature, annealing time, annealing times, a heating / cooling rate and the like are controlled so as to implement stress control. According to the obtained experimental phenomenon, a set of complete thin film stress elimination process flow and theoretical system is established by combining theoretical guidance. By using the method, the thin film stress can be macroscopically regulated and controlled on the premise of ensuring good optical characteristics of a thin film. The method can provide theoretical guidance for an optical element shape preserving technology, and can provide samples for production of complex optical thin films, high-light optical elements and the like.

Description

technical field [0001] The invention belongs to the technical field of optical element shape retention. In particular, it relates to a thin film stress elimination method, a new process for regulating the stress of a thin film prepared by ion beam sputtering technology by using an annealing heat treatment method and a stress compensation method. Background technique [0002] Optical thin films prepared by ion beam sputtering have the advantages of close density to bulk materials, stable optical properties, and low loss. They are widely used in strong laser thin films, complex spectral precision optical thin films, and other fields. However, the optical films prepared by ion beam sputtering usually have a large film stress, which is 2-3 times or even more than that of other methods. Such a high stress will cause elastic deformation of the thin film optical components, and even plastic deformation in severe cases, resulting in cracking and peeling of the film. The deformatio...

Claims

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Application Information

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IPC IPC(8): C23C14/46C23C14/58C23C14/08C23C14/10C23C14/06C23C14/54
CPCC23C14/0694C23C14/081C23C14/083C23C14/10C23C14/46C23C14/54C23C14/5806
Inventor 李刚吕起鹏邓淞文吕少波金玉奇
Owner DALIAN INST OF CHEM PHYSICS CHINESE ACAD OF SCI
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