Manufacturing method of ohmic contact electrode of optical communication chip

Abstract

The invention relates to a manufacturing method of an ohmic contact electrode of an optical communication chip. The method comprises the following steps of: manufacturing a laminated ohmic contact electrode of Ti / Pt / Au elementary metal on a P surface of the optical communication chip; performing P-surface alloying annealing on the P-surface Ti / Pt / Au ohmic contact electrode, the P-surface alloying annealing temperature is T1; manufacturing a laminated ohmic contact electrode of Ti / Pt / Au elementary metal on the N surface of the optical communication chip; performing N-surface alloying annealing on the N-surface Ti / Pt / Au ohmic contact electrode, wherein the N-surface alloying annealing temperature is T2, and the P-surface alloying annealing temperature T1 is higher than the N-surface alloying annealing temperature T2. According to the ohmic contact electrode manufacturing process, the ohmic contact electrode stable in process and low in contact resistance can be obtained, and the optical communication chip stable in performance, excellent in chip appearance and high in yield is finally obtained by matching with the cleavage cutting process.

Description

technical field [0001] The invention belongs to the field of semiconductor manufacturing, and in particular relates to a method for manufacturing an ohmic contact electrode of an optical communication chip. Background technique [0002] The production of metal ohmic contact electrodes is a key process in semiconductor manufacturing, especially in the optical communication chip manufacturing industry. The ohmic contact with low resistance and stable contact is the key factor affecting the performance and stability of the die. If the reliability of the ohmic contact resistance is poor , will increase the resistance value of the device, and in serious cases will directly cause the device to fail. [0003] In addition, in most conventional optical communication chip manufacturing processes, when it is impossible to make ohmic contact electrodes with the same cleavage region as the P surface on the N surface, the thickness of the ohmic contact electrodes on the N surface restrict...

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Problems solved by technology

[0002] The production of metal ohmic contact electrodes is a key process in semiconductor manufacturing, especially in the optical communication chip manufacturing industry. The ohmic contact with low resistance and stable contact is the key factor affecting the performance and stability of the die. If the reliability of the ohmic contact resistance is poor , will increase the resistance value of the device, and in serious cases will directly cause the device to fail

[0003] In addition, in most conventional optical communication chip manufacturing processes, when it is impossible to make an ohmic contact electrode with the same cleavage region as the P surface on the N surface, the thickness of the ohmic contact electrode on the N surface restricts the cleavage effect

Although the thicker N-side ohmic contact electrode is beneficial to the heat dissipation of the chip and reduces the power consumption of the device, but the thicker N-side ohmic contact electrode is also easy to cause the N-side electrode adhesion after cleavage, which will directly lead to damage to the semi-finished chip and reduce the power consumption of the device. Yield

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