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Solar cell manufacturing process and chained coating equipment

A technology for solar cells and manufacturing processes, applied in sustainable manufacturing/processing, final product manufacturing, circuits, etc., which can solve problems affecting cell yield, production efficiency and cost, inability to fully activate passivation capability, front surface contamination, etc. problems, to achieve the effect of improving yield and production efficiency, improving battery efficiency, and avoiding turnover

Pending Publication Date: 2021-06-25
江苏杰太光电技术有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] 1. For TOPCon’s existing process flow, because the doped amorphous silicon layer on the back surface of the silicon wafer undergoes long-term high-temperature treatment during annealing, the escape and diffusion of doped phosphorus will occur, thereby polluting the front surface. Therefore, annealing After the process (step S5) is completed, a cleaning process (step S6) is required to remove the pollutants introduced from the front surface of the silicon wafer. The process is relatively complicated and there are many process steps, which affects the cell yield, production efficiency and cost;
[0005] 2. In the existing process, the front passivation structure of TOPCon, that is, the aluminum oxide and silicon nitride stack, is only subjected to short-term high-temperature treatment in the final printing and sintering process after deposition, but the short-term high temperature cannot fully activate its passivation capacity, becoming an important factor restricting the improvement of battery efficiency

Method used

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  • Solar cell manufacturing process and chained coating equipment
  • Solar cell manufacturing process and chained coating equipment

Examples

Experimental program
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Embodiment 1

[0025] refer to figure 2 , the solar cell manufacturing process provided in this embodiment 1 includes the following steps:

[0026] S1. Select N-type crystalline silicon substrate, clean and texture the silicon substrate;

[0027] S2. Boron diffusion to prepare PN junction;

[0028] S3. Clean and remove the BSG layer, and perform backside polishing;

[0029] S4. A tunnel oxide layer with a thickness of 0.5-2nm is grown on the back of the N-type crystalline silicon substrate, and a doped amorphous silicon layer with a thickness of 20-200nm is deposited on the tunnel oxide layer;

[0030] S5. Prepare an aluminum oxide+silicon nitride stack on the front side of the N-type crystalline silicon substrate;

[0031] S6. Annealing, the annealing process temperature is 500-900°C, and the annealing time is 1-30min. High temperature is used to activate the doping atoms on the back of the N-type crystalline silicon substrate, so that the back of the N-type crystalline silicon is cryst...

Embodiment 2

[0037] The difference between the present embodiment 2 and the embodiment 1 is that the steps S4 and S5 in the embodiment 1 are sequentially exchanged in the present embodiment 2, namely:

[0038] S4. prepare an aluminum oxide+silicon nitride stack on the front side of the N-type crystalline silicon substrate;

[0039] S5. A tunnel oxide layer with a thickness of 0.5-2 nm is grown on the back of the N-type crystalline silicon substrate, and a doped amorphous silicon layer with a thickness of 20-200 nm is deposited on the tunnel oxide layer.

Embodiment 3

[0041] This Example 3 provides a TOPCon solar cell manufactured by using the solar cell manufacturing process described in Example 1 or 2.

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Abstract

The invention discloses a solar cell manufacturing process. The solar cell manufacturing process comprises the following steps: S1, cleaning and texturing; S2, boron diffusing; S3, cleaning to remove the BSG layer and polishing the back surface; S4, depositing a tunneling oxide layer and a doped amorphous silicon layer on the back surface; S5, preparing an aluminum oxide and silicon nitride laminated layer on the front side; S6, annealing; S7, depositing a silicon nitride anti-reflection protection layer on the back surface; and S8, carrying out silk-screen printing, sintering testing and sorting. According to the invention, the process of depositing aluminum oxide and silicon nitride films in the front surface is adjusted to be before the annealing process, and the passivation capability of aluminum oxide and silicon nitride is fully excited by using long-time high temperature during annealing, so that the cell efficiency is improved; and secondly, the front surface of the silicon wafer is covered with an aluminum oxide film and a silicon nitride film in advance, so that the situation that impurities are introduced into the front surface during annealing to affect the battery performance is avoided, meanwhile, the cleaning procedure after annealing can be omitted, the technological process is simplified to 8 steps from 9 steps in the prior art, and therefore the production efficiency is effectively improved.

Description

technical field [0001] The invention relates to the technical field of solar cell preparation, in particular to a solar cell manufacturing process and chain coating equipment. Background technique [0002] In the future, efficiency improvement and cost reduction will be the main direction of high-efficiency battery industry technology. Tunneling oxide passivation contact (TOPCon) technology is one of the key research directions of current industrialized high-efficiency solar cells, and its mass production efficiency has increased from 20.7% to 24% or even higher in the past three years. Based on the current cost calculation, for every 1% increase in TOPCon battery efficiency, the EPC cost will decrease by 0.2 yuan / W. It can be seen that the continuous improvement and optimization of TOPCon technology has become the key to further improving the overall efficiency of the battery and obtaining a lower LCOE. [0003] refer to figure 1 , the existing TOPCon cell manufacturing p...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18H01L31/0216H01L31/0224
CPCH01L31/1804H01L31/1864H01L31/1868H01L31/02167H01L31/02168H01L31/022425Y02P70/50Y02E10/547
Inventor 上官泉元闫路刘宁杰
Owner 江苏杰太光电技术有限公司
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