Al-doped gallium oxide X-ray detector and preparation method thereof

A gallium oxide and detector technology, applied in the field of semiconductor optoelectronic devices, can solve the problem of slow response time of gallium oxide X-ray detectors, and achieve the effects of shortening the response time, improving the sensitivity, and reducing the concentration of free electrons

Pending Publication Date: 2021-06-25
HANGZHOU FUJIA GALLIUM TECH CO LTD
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Problems solved by technology

[0005] The technical problem to be solved by the present invention is to provide an Al-doped gallium oxide X-ray detector and its preparation method in view of the above-mentioned defects of the prior art, aiming to solve the slow response time of the gallium oxide X-ray detector in the prior art The problem

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  • Al-doped gallium oxide X-ray detector and preparation method thereof
  • Al-doped gallium oxide X-ray detector and preparation method thereof
  • Al-doped gallium oxide X-ray detector and preparation method thereof

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preparation example Construction

[0044] like figure 1 Shown, a kind of preparation method of Al-doped gallium oxide X-ray detector of the present invention comprises the following steps:

[0045] Step S100, providing an Al-doped gallium oxide single crystal.

[0046] Specifically, X-rays are electromagnetic radiation with energy between ultraviolet light and γ-rays. X-ray detection technology is based on the interaction between X-rays and matter to produce photoconductive or ionized excitation equivalents, generating secondary electrons and passing through the back-end electrons. Chemical processing produces electrical signals. Al-doped gallium oxide X-ray detector as a semiconductor detector uses semiconductor materials to absorb high-energy X-rays and generate electron-hole pairs, and the carriers induced by X-rays are collected by external circuits to form electrical signals. Al-doped gallium oxide single crystal refers to the single crystal formed by Al-doped gallium oxide material. Compared with galliu...

specific Embodiment 1

[0081] 1. Use the guided mode method to grow 100-face Al-doped gallium oxide, cut it to obtain a 6mm×6mm×0.5mm crystal plate, and the Al-doped concentration is 20mol%.

[0082] 2. Perform annealing treatment on the Al-doped gallium oxide substrate sheet, under the air atmosphere, the annealing temperature is 1450°C, and the annealing time is 20h.

[0083] 3. Grinding and polishing the Al-doped gallium oxide substrate after the annealing is completed.

[0084] 4. After polishing, ultrasonic treatment in acetone and ethanol in turn.

[0085] 5. Plating Ti / Au electrodes (Ti layer thickness is 10nm; Au layer electrode thickness is 50nm) interdigitated electrodes on the Al-doped gallium oxide single wafer, with a width and interval of 100 μm, using magnetron sputtering coating.

[0086] 6. Under the voltage of 1v, excite the X-ray every 30s, and test the response time of the device. Specific results such as Figure 4 shown. It can be seen that the stress response time of the Al...

specific Embodiment 2

[0088]In order to verify the impact of the annealing treatment on the Al-doped gallium oxide X-ray detector, prepare the Al-doped gallium oxide X-ray detector without annealing treatment, except that the annealing treatment is not performed, the steps of the second embodiment and the specific embodiment Step 1 is the same.

[0089] like Figure 5 As shown, the sensitivity of the Al-doped gallium oxide X-ray detector is obviously less than the sensitivity of the Al-doped gallium oxide X-ray detector in the present invention, and the response time of the Al-doped gallium oxide X-ray detector is 60s, which is obviously greater than that of the present invention Response time of moderately Al-doped gallium oxide X-ray detectors. Moreover, the current of the Al-doped gallium oxide X-ray detector in the present invention is smaller than that of the non-Al-doped gallium oxide X-ray detector.

[0090] It should be noted that when testing the device performance, the device can also b...

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Abstract

The invention discloses an Al-doped gallium oxide X-ray detector and a preparation method thereof. The preparation method of the Al-doped gallium oxide X-ray detector comprises the following steps of: providing an Al-doped gallium oxide single crystal; cutting the Al-doped gallium oxide single crystal to obtain a single crystal substrate sheet; carrying out annealing treatment on the single crystal substrate sheet to obtain an annealed single crystal substrate sheet; and forming an interdigital electrode on the annealed single crystal substrate sheet to obtain the Al-doped gallium oxide X-ray detector. According to the method, the Al-doped gallium oxide single crystal is adopted, the resistivity of the detector is improved by doping Al in gallium oxide, the single crystal substrate sheet is obtained after the Al-doped gallium oxide single crystal is cut, the single crystal substrate sheet is subjected to annealing treatment, and the concentration of free electrons in the Al-doped gallium oxide single crystal is reduced through annealing treatment, so that the sensitivity of the detector is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor optoelectronic devices, in particular to an Al-doped gallium oxide X-ray detector and a preparation method thereof. Background technique [0002] X-ray is a kind of high-energy ray. After its discovery, it has had a profound and extensive impact on human society. Now X-ray has been widely used in medical diagnosis, environmental monitoring, safety inspection, industrial non-destructive monitoring, advanced physics and other fields. X-ray detection is one of the key technologies for the application of X-rays, and the continuous development of materials and device technologies for X-ray detectors is an important development direction in the field of X-ray applications. NaI material is commonly used in scintillator X-ray detectors, the linearity of detecting X-ray energy is not good, and its energy resolution is very poor, generally at 50%-60%; and NaI(Tl) detectors need to be equipped with pho...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18H01L31/115H01L31/032
CPCH01L31/0321H01L31/115H01L31/18H01L31/1864Y02P70/50
Inventor 齐红基赛青林
Owner HANGZHOU FUJIA GALLIUM TECH CO LTD
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