A kind of oled plant growth light source and preparation method thereof
A plant growth and light source technology, which is applied in the field of OLED plant light source and its preparation, can solve the problems of pollution, uneven illumination, and unfavorable energy utilization, etc., and achieve the effect of low calorific value and waste reduction
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[0037] The present invention also provides a method for preparing the OLED plant growth light source described in the above technical solution, comprising the following steps: successively evaporating a hole injection layer, a hole transport layer, a blue light-emitting layer, a spacer layer, a red light-emitting layer, Electron transport layer, electron injection layer and cathode. In the present invention, there is no special limitation on the operation method of the evaporation, and the evaporation method well known to those skilled in the art can be used.
[0038] In the present invention, when the anode is disposed on the substrate, the present invention preferably cleans the substrate before vapor deposition. The present invention has no special limitation on the cleaning method, and a cleaning method well known to those skilled in the art can be used. In the present invention, the cleaning is preferably to sonicate the substrate sequentially in acetone and isopropanol....
Embodiment 1
[0043] (1) Prepare the ITO (indium tin oxide) substrate, put it into acetone and isopropanol in order to ultrasonic for 90 minutes, complete the cleaning of the substrate, and then put it into the evaporation chamber together with various materials that need to be evaporated, Pump the vacuum in the evaporation chamber to 10 -5 Below Pa, start evaporation;
[0044] (2) A 20nm hole injection layer (2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene ), 20nm hole transport layer N,N'-diphenyl-N,N'-(1-naphthyl)-1,1'-biphenyl-4,4'-diamine (abbreviated as NPB); NPB and 1,3,5-tris(1-phenyl-1H-benzimidazol-2-yl)benzene (TPBi for short) were doped and vapor-deposited at a volume ratio of 1:1 to obtain a blue light-emitting layer; Then, TPBi with a thickness of 1nm was evaporated on the blue light-emitting layer as a spacer layer; 0.5nm of RD139 was evaporated as a red light-emitting layer; 30nm of TPBi was evaporated on the red light-emitting layer as an electron transport layer...
Embodiment 2
[0046] The difference from Example 1 is that the thickness of the spacer layer is 2nm, and the rest of the steps are the same as in Example 1, and the obtained OLED plant growth light source is named D2.
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