On-chip integrated high repetition frequency laser resonant cavity device and ultrashort pulse laser

A laser resonator, pulsed laser technology, applied in the structure/shape of optical resonators, lasers, laser parts and other directions, can solve the problems of optical fiber mode mismatch, easy to be interfered by the outside world, etc., to improve reliability, not easy to external Interference, improve the effect of integration

Active Publication Date: 2021-06-25
XIAMEN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

At present, this kind of laser cavity is connected by axial butt joint with ceramic ferrule or sleeve, which faces the problems of lack of practicability such as fiber mode mismatch and susceptibility to external interference.

Method used

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  • On-chip integrated high repetition frequency laser resonant cavity device and ultrashort pulse laser
  • On-chip integrated high repetition frequency laser resonant cavity device and ultrashort pulse laser
  • On-chip integrated high repetition frequency laser resonant cavity device and ultrashort pulse laser

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Experimental program
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Effect test

Embodiment 1

[0049] see figure 1 and figure 2 , figure 1 and figure 2 The on-chip integrated high repetition frequency laser resonator device 10 in Embodiment 1 is shown. It should be noted that, figure 1 and figure 2 The size of each component of the on-chip integrated high repetition frequency laser resonator device 10 does not reflect the actual size of each component in this embodiment, but is only for illustrating the structure of each component. The real size of each component in this embodiment should be subject to the written description.

[0050] Such as figure 1 and figure 2 As shown, the on-chip integrated high repetition frequency laser resonator device 10 in Embodiment 1 includes a semiconductor substrate 1 , a piezoelectric actuator 2 , a gain fiber 3 and a temperature regulator 4 .

[0051] In the present embodiment, the semiconductor substrate 1 adopts a silicon wafer, and its size is 50 mm along the length of the first direction D1, and 50 mm along the width of...

Embodiment 2

[0069] see image 3 , image 3 shows the ultrashort pulse laser 100 in the second embodiment, as image 3 As shown, the ultrashort pulse laser 100 includes an on-chip integrated high repetition rate laser resonator device 10 , a pump laser generation system 20 , a coupling system, a temperature controller 60 , three voltage regulators 70 and a repetition rate controller 80 .

[0070] Among them, such as image 3 As shown, the on-chip integrated high repetition frequency laser resonator device 10 includes a semiconductor substrate 1, three piezoelectric actuators 2, three gain fibers 3 and a temperature regulator 4 ( image 3 not shown).

[0071] Wherein, the semiconductor substrate 1 is a silicon wafer, and its two ends along the first direction D1 are respectively provided with a semiconductor saturable absorption mirror 11 and a dichroic dielectric film 12 . The semiconductor saturable absorption mirror 11 and the dichroic dielectric film 12 are the same as those in the ...

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Abstract

The invention discloses an on-chip integrated high repetition frequency laser resonant cavity device and an ultrashort pulse laser. The on-chip integrated high repetition frequency laser resonant cavity device comprises a semiconductor substrate and a gain optical fiber, wherein the two ends of the semiconductor substrate are respectively plated with a semiconductor saturable absorber mirror and a dichroic dielectric film, the gain optical fiber is arranged in an optical fiber groove in the semiconductor substrate, the two ends of the gain optical fiber are in butt joint with the inner surface of the semiconductor saturable absorber mirror and the inner surface of the dichroic dielectric film respectively. The ultrashort pulse laser comprises a pumping laser generating system, a coupling system and the on-chip integrated high repetition frequency laser resonant cavity device. The device is high in integration level and high in practicability. Furthermore, a piezoelectric actuator drives the gain optical fiber to stretch out and draw back so as to tune the repetition frequency of the pulse laser. According to the invention, a plurality of laser resonant cavities are arranged on the semiconductor substrate to realize pulse laser array output; and a voltage regulator is controlled to independently regulate the voltage of each piezoelectric brake, so that the frequency synchronization of multiple paths of pulse lasers is realized.

Description

technical field [0001] The application relates to the technical field of optoelectronic devices, in particular to an on-chip integrated high repetition frequency laser resonator device and an ultrashort pulse laser. Background technique [0002] High repetition rate ultrafast lasers have important application prospects in nonlinear medical imaging, special material processing, arbitrary waveform generation, and high-speed optical communication systems. According to the passive mode-locking theory, the repetition rate is inversely proportional to the length of the resonator, so to realize the ultrashort pulse laser with a repetition rate of 1GHz, the cavity length of the laser resonator needs to be shortened to 10cm. At present, this kind of laser cavity is connected by axial butt joint with ceramic ferrule or sleeve, which faces the problems of lack of practicability such as fiber mode mismatch and susceptibility to external interference. Contents of the invention [0003...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S3/067H01S3/08H01S3/098H01S3/11H01S3/13
CPCH01S3/067H01S3/08H01S3/1118H01S3/13
Inventor 程辉辉陈可封
Owner XIAMEN UNIV
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