Unlock instant, AI-driven research and patent intelligence for your innovation.

Integrated MOS self-adaptive control SOI LIGBT

A self-adaptive control, bottom-up technology, applied to electrical components, electrical solid devices, circuits, etc., can solve problems such as increased device conduction voltage drop and weakened conductance modulation effect

Active Publication Date: 2021-07-06
UNIV OF ELECTRONICS SCI & TECH OF CHINA
View PDF10 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Since this technology weakens the conductance modulation effect when the device is turned on, it will increase the conductance voltage drop of the device

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Integrated MOS self-adaptive control SOI LIGBT
  • Integrated MOS self-adaptive control SOI LIGBT

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0018] Such as figure 1 As shown, the structure of this example includes an integrated MOS self-adaptive control SOI LIGBT, including a P substrate 1, a buried oxide layer 2, and a top semiconductor layer that are sequentially stacked from bottom to top; the top semiconductor layer has an N-type Doping, along the lateral direction of the device, both ends of the upper layer of the top semiconductor layer have a P well region 5 and an N-type buffer layer 4, and the N-type semiconductor between the P well region 5 and the N-type buffer layer 4 is an N drift region 3; the upper layer of the N-type buffer layer 4 has a P+ anode region 6, and the lead-out end of the P+ anode region 6 is an anode; the upper layer of the P well region 5 has an integrated MOS structure in the direction close to the N-type buffer layer 4, and is arranged side by side. The P+ region 8 and the N+ region 7, and the integrated MOS structure and the P+ region 8 are isolated by the first dielectric isolation...

Embodiment 2

[0024] Such as figure 2 As shown, the difference between this example and the structure of Example 1 is that the LIGBT main gate structure in this example is a slot gate. Compared with Example 1, the channel density can be increased, and the trench gate can be used as a physical barrier to increase the hole concentration in the drift region, thereby further enhancing the conductance modulation capability and reducing the forward conduction voltage drop.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention belongs to the technical field of power semiconductors, and relates to an integrated MOS self-adaptive control SOI LIGBT. The SOI LIGBT is mainly characterized in that two MOS tubes are integrated on the cathode side of the SOI LIGBT and are isolated from each other through an oxidation isolation groove. And the MOS tube can realize self-adaptive control of the SOI LIGBT through electrical connection. During forward conduction, the integrated MOS adaptively controls a parasitic diode of the SOI LIGBT to be turned on, so that the conductivity modulation effect is enhanced, the conduction voltage drop of the device is reduced, and the saturation current of the device is increased; in a short-circuit state, the integrated MOS adaptively controls a parasitic diode of the SOI LIGBT to be cut off, the latch-up effect is inhibited, and the anti-short-circuit capability of the device is improved. The SOI LIGBT structure has the advantages that compared with a traditional SOI LIGBT structure, the SOI LIGBT structure is lower in conduction voltage drop, higher in saturation current and longer in short circuit tolerance time.

Description

technical field [0001] The invention belongs to the technical field of power semiconductors, and relates to an integrated MOS self-adaptive control SOI LIGBT (Lateral Insulated Gate Bipolar Transistor, lateral insulated gate bipolar transistor). Background technique [0002] As a typical representative of electronic power devices, IGBT not only has the advantages of high input impedance, good gate control ability and simple driving circuit of MOSFET, but also has the advantages of high current density, low conduction voltage drop and strong current handling capacity of BJT. At present, it has been widely used in high-speed rail, power grid, smart home appliances and new energy vehicles and other fields. Due to the use of dielectric isolation, SOI-based LIGBT has the advantages of small leakage current, small parasitic capacitance, and strong radiation resistance. In addition, lateral IGBT (LIGBT) is easy to integrate, making SOI LIGBT a core component of monolithic power in...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/739H01L29/06H01L27/12
CPCH01L29/7394H01L27/1203H01L29/0619H01L29/0684
Inventor 罗小蓉苏伟张森马臻杨可萌魏杰樊雕王晨霞
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA