Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

W-band millimeter wave chip multilayer dielectric substrate

A multi-layer dielectric and millimeter wave technology, applied in the reduction of crosstalk/noise/electromagnetic interference (, printed circuit, radiation element structure, etc., can solve the imbalance of substrate structure and material, solder ball virtual soldering and desoldering, Substrate mechanical warpage and other problems

Active Publication Date: 2021-07-06
UNIV OF ELECTRONICS SCI & TECH OF CHINA
View PDF7 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Zhu Datong and others (Zhu Datong. New development of substrate material technology for millimeter wave circuits (Part 1) [J]. Copper Clad Laminate Information, 2016 (05): 7-16.) disclosed a substrate multilayer structure, using carbon Hydrogen resin is used as the seventh layer of circuit traces, the sixth layer of microwave substrate and the fifth layer of ground plane or reference layer, epoxy resin is used as the fourth layer of FR-4 prepreg, the third layer of FR-4 laminate, the second layer FR-4 prepreg and the first layer of FR-4 laminate, the structure and material of the multilayer dielectric substrate are unbalanced, and the substrate is prone to mechanical warping and deformation, which makes the solder balls cause virtual soldering and desoldering due to structural stress

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • W-band millimeter wave chip multilayer dielectric substrate
  • W-band millimeter wave chip multilayer dielectric substrate
  • W-band millimeter wave chip multilayer dielectric substrate

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0048] Such as figure 1 As shown, a cross-sectional view showing a W-band millimeter chip multilayer dielectric substrate provided by the embodiment of the present invention, and the W-band millimeter wave chip multilayer dielectric substrate is alternately arranged by the metal layer 39 and the dielectric layer 40. Specifically includes: the first layer 1, covering the first dielectric layer 2 of the first formation, covering a second formation 3 of the first dielectric layer, covering the second dielectric layer 4 of the second formation, covering the The control layer 5 of the second medium layer covers the third dielectric layer 6 of the control layer, covering the power supply layer 7 of the third dielectric layer, covering the fourth medium layer 8 of the power layer, covering the fourth The third formation 9 of the dielectric layer covers the fifth medium layer 10 of the third formation, covering the radiofrequency layer 11 of the fifth medium layer, covering the sixth medi...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A W-band millimeter wave chip multilayer dielectric substrate comprises a first ground layer, a first dielectric layer, a second ground layer, a second dielectric layer, a control layer, a third dielectric layer, a power supply layer, a fourth dielectric layer, a third ground layer, a fifth dielectric layer, a radio frequency layer, a sixth dielectric layer, a fourth ground layer, a seventh dielectric layer and an antenna layer. The fourth ground layer is connected with the second end of the radio frequency layer through a vertical through hole; the first end of the radio frequency layer is connected with the third ground layer, the power supply layer, the control layer, the second ground layer and the first ground layer through vertical through holes; the radio frequency layer is of a multi-section microstrip line structure with different impedances. The structure of the metal layer is reasonably planned, the radio frequency layer is arranged between the two ground layers, and the shielding columns are arranged around the signal transmission structure, so that high-density wiring is carried out between the same layer or different layers while the anti-interference performance of radio frequency signals is guaranteed, and the dielectric substrate is suitable for the application scene of the antenna and chip integrated packaging interconnection structure. And the requirements of complex functions, high integration level and light weight at present are met.

Description

Technical field [0001] The present invention relates to impedance matching techniques, and more particularly to a W-band millimeter-chip multilayer dielectric substrate. Background technique [0002] In the modern, microwave, microwave wave, has become a very valuable resource due to its unique own characteristics. With the rapid development and application of microwave circuits and radio frequency circuits, microwave multilayer circuit tends to integrate and miniaturize. For efficient use of resources, there is a need to integrate more components and chips on the PCB board. Therefore, how the higher the integration of the microwave integrated circuit, the smaller the volume weight, the performance of the circuit system has become a new Research direction and hotspots. [0003] When designing a W-band multilayer dielectric substrate, it is necessary to consider the high-temperature and high humidity, dielectric transmission loss, dielectric characteristics, substrate layers, and ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H05K1/02H05K1/11H01Q1/38
CPCH05K1/0298H05K1/0224H05K1/0219H05K1/113H01Q1/38H05K2201/0195H05K2201/09481
Inventor 贾春阳孟凡
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products