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Zinc sulfide nanometer material and preparation method thereof, zinc sulfide film and quantum dot light-emitting diode

A nanomaterial, zinc sulfide technology, applied in the fields of zinc sulfide, semiconductor/solid-state device manufacturing, electrical components, etc., can solve problems such as being easily affected by external conditions such as water vapor, poor interface contact between active layers, and poor electron transmission performance, and achieve Improve electron transport performance and stability, improve electrical conductivity, improve the effect of contact interface

Active Publication Date: 2021-07-16
TCL CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The inventors found that ZnS particles are easy to aggregate and have certain defects on the surface, which can easily cause the ZnS film to have obvious surface defects, which makes it have poor interface contact with the active layer, resulting in serious carrier recombination and limiting its electron transport performance. , and its poor stability, easily affected by external conditions such as water vapor
[0005] The purpose of the present invention is to provide a zinc sulfide nanomaterial and its preparation method, zinc sulfide thin film, and quantum dot light-emitting diodes, aiming to solve the problem of surface defects in existing zinc sulfide nanoparticles, which lead to poor electron transport performance and relatively low stability. bad question

Method used

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  • Zinc sulfide nanometer material and preparation method thereof, zinc sulfide film and quantum dot light-emitting diode

Examples

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Embodiment 1

[0051] The following takes the use of zinc chloride, thiourea, and catechol as examples for a detailed introduction:

[0052] 1. Weigh an appropriate amount of zinc chloride and add it to 50mL of ethanol to form a solution with a concentration of 0.5M, stir and dissolve at 60°C, add a thiourea ethanol solution with a concentration of 0.55M, and continue stirring for 0.5 hours to obtain a mixed solution;

[0053] 2. Add 0.05M catechol alcohol solution to the above mixed solution, continue to stir at 60°C for 2 hours to obtain a clear and transparent solution, and use a homogenizer to mix the treated ITO spin coating and annealing to obtain the zinc sulfide thin film.

Embodiment 2

[0055] The following takes zinc nitrate hexahydrate, thioacetamide, and dopamine as examples for a detailed introduction:

[0056] 1. Weigh an appropriate amount of zinc nitrate and add it to 50mL of ethanol to form a solution with a concentration of 0.5M; stir and dissolve at 60°C, add a thioacetamide ethanol solution with a concentration of 0.55M, and continue stirring for 0.5 hours to obtain a mixed solution;

[0057] 2. Add 0.05M dopamine alcohol solution to the above mixed solution, and continue to stir at 60°C for 2 hours to obtain a clear and transparent solution, which is spin-coated on the treated ITO with a homogenizer And perform annealing treatment to obtain the zinc sulfide thin film.

Embodiment 3

[0059] The following takes zinc acetate dihydrate, sodium sulfide, and protoporphyrin as examples for a detailed introduction:

[0060] 1. Weigh an appropriate amount of zinc acetate and add it to 50mL of ethanol to form a solution with a concentration of 0.5M; stir and dissolve at 60°C, add a sodium sulfide ethanol solution with a concentration of 0.55M, and continue stirring for 0.5 hours to obtain a mixed solution;

[0061] 2. Add 0.03M dopamine alcohol solution to the above mixed solution, and continue to stir at 60°C for 2 hours to obtain a clear and transparent solution, which is spin-coated on the treated ITO with a homogenizer And perform annealing treatment to obtain the zinc sulfide thin film.

[0062] The preparation method of zinc sulfide film provided by the invention has the following benefits:

[0063] 1. The aromatic ring bidentate ligand can effectively passivate the surface hydroxyl groups and defects of ZnS nanoparticles, modify the interface between the zi...

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Abstract

The invention discloses a zinc sulfide nanometer material and a preparation method thereof, a zinc sulfide film and a quantum dot light-emitting diode, and the preparation method of the zinc sulfide nanometer material comprises the following steps: dispersing a zinc salt and a sulfur source in an organic solvent, and carrying out a reaction to obtain a zinc sulfide precursor solution; and adding an aromatic ring bidentate ligand solution into the zinc sulfide precursor solution to prepare the zinc sulfide nano material. The aromatic ring bidentate ligand and the zinc sulfide nanoparticles are assembled to form a grafted structure, so that the quality of the zinc sulfide nanoparticles is improved, the conductivity of the zinc sulfide nano-material is improved, the contact interface between the zinc sulfide material and an active layer when the zinc sulfide material is used as an electron transport layer is improved, and the electron transmission performance and the stability are improved.

Description

technical field [0001] The invention relates to the field of quantum dot light-emitting diodes, in particular to a zinc sulfide nanometer material and a preparation method thereof, a zinc sulfide thin film, and a quantum dot light-emitting diode. Background technique [0002] Quantum dots have been rapidly developed in the application of quantum dot light-emitting diodes (QLEDs) due to their excellent light-emitting properties. Quantum dots have many characteristics, including: (1) the emission spectrum can be adjusted by changing the particle size; (2) the excitation spectrum is relatively broad, the emission spectrum is narrow, and the absorption is strong; (3) the photostability is very good; (4) Longer fluorescence lifetime, etc. In traditional inorganic electroluminescent devices, electrons and holes are injected from the cathode and anode respectively, and then recombine in the light-emitting layer to form excitons to emit light. Conduction band electrons in wide ban...

Claims

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Application Information

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IPC IPC(8): C01G9/08H01L51/50
CPCC01G9/08H10K50/115H10K50/16
Inventor 郭煜林吴龙佳张天朔李俊杰
Owner TCL CORPORATION
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