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Preparation method of CdS/Cu5FeS4 heterojunction semiconductor photocatalyst

A photocatalyst and semiconductor technology, applied in the direction of catalyst activation/preparation, physical/chemical process catalysts, chemical instruments and methods, etc., can solve problems such as high price and scarcity limitation, and achieve extended life, narrow band gap, and enhanced visible light catalysis. active effect

Pending Publication Date: 2021-07-20
SHENYANG INSTITUTE OF CHEMICAL TECHNOLOGY
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, its wide application is limited by its high price and its own scarcity.

Method used

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  • Preparation method of CdS/Cu5FeS4 heterojunction semiconductor photocatalyst

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Effect test

Embodiment 1

[0017] (1) First, to prepare CdS, under ultrasonic treatment, thiourea and CdCl 2 Disperse in 10 mL of ethylenediamine, respectively, and continue sonication. The mixture was transferred to an autoclave, sealed and kept at 160 °C for 48 hours. After natural cooling to room temperature, the solid product was collected manually and thoroughly washed by centrifugation with deionized water for 3-6 times, then dried in an oven for 12 hours, and the CdS sample was obtained and ground for the next step.

[0018] (2) Preparation of Cu 5 FeS 4 First, weigh 0.0990 g CuCl and 0.2730 g FeCl 3 ·6H 2 O was respectively dispersed in 15 mL of ethylenediamine, and the two solutions were mixed after ultrasonication for 15 min, and a 4-fold excess of (NH 4 ) 2 S solution. Then, the solution was transferred to a 50 mL Teflon-lined reactor, and after reacting at 180 °C for 24 hours, the black solid was washed with deionized water and absolute ethanol for 5 to 8 times, and the precipitate wa...

Embodiment 2

[0021] As described in Example 1, the difference is to add Cu in step (2) 5 FeS 4 The amount is adjusted to 0.25 mL, then the final catalyst contains 0.25 wt% Cu 5 FeS 4 0.25 wt% CdS / Cu 5 FeS 4 Plasma composite photocatalyst.

Embodiment 3

[0023] As described in Example 1, the difference is to add Cu in step (2) 5 FeS 4 The amount of is adjusted to 0.75 mL, then the final catalyst contains 0.25 wt% Cu 5 FeS 4 0.25 wt% CdS / Cu 5 FeS 4 Plasma composite photocatalyst.

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Abstract

The invention relates to a preparation method of a photocatalyst, in particular to a preparation method of a CdS / Cu5FeS4 heterojunction semiconductor photocatalyst, which comprises the following steps: firstly, synthesizing Cu5FeS4, adding a copper source, an iron source and a sulfur source into an ethylenediamine solvent in proportion, uniformly mixing, and reacting at 180 DEG C for 24 hours; secondly, weighing and dispersing CdS in 30 mL of deionized water, and then adding Cu5FeS4; after fully and uniformly mixing, transferring the mixture into a stainless steel reaction kettle with a polytetrafluoroethylene lining, and reacting at 180 DEG C for 3 hours; and after the hydrothermal reaction, carrying out centrifugal separation on grass green precipitates, sequentially cleaning with deionized water and ethanol water, and drying to obtain the Cu5FeS4 / CdS photocatalyst taking Cu5FeS4 as the cocatalyst. The prepared photocatalyst is clear in composition and structure, can treat sewage under ultraviolet and visible light irradiation, and is a very promising sewage treatment photocatalyst.

Description

technical field [0001] The present invention relates to a kind of preparation method of photocatalyst, particularly relate to a kind of CdS / Cu 5 FeS 4 Preparation method of heterojunction semiconductor photocatalyst. Background technique [0002] In the past few decades, the survival and development of human beings have been affected by the energy crisis and environmental pollution. Because of this, photocatalysts that can use solar energy to degrade organic pollutants have attracted more and more attention. Among the various photocatalysts studied, CdS has strong absorption in the visible light range and a wider photoresponse range due to its forbidden band width of about 2.4 eV, which can achieve the efficiency of using visible light. However, the photocatalytic activity of pure CdS is limited due to its poor adsorption performance and photochemical instability. Therefore, it is very important to support cocatalysts on pure semiconductor photocatalysts for efficient cha...

Claims

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Application Information

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IPC IPC(8): B01J27/043B01J37/10
CPCB01J27/043B01J37/10B01J35/39
Inventor 徐振和王麟王琳娜金灿灿贾砚迪黄碧君高雨郑佳欣何传仁蒙晓钰范浩天樊苗苗
Owner SHENYANG INSTITUTE OF CHEMICAL TECHNOLOGY
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