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Solar cell processing method for laser passivation treatment

A solar cell and passivation technology, applied in photovoltaic power generation, sustainable manufacturing/processing, circuits, etc., can solve problems such as the influence of the metallization structure of PERC cells, poor passivation effect of PERC solar cells, and influence on cell performance, etc. Improve the conversion efficiency and light utilization, reduce the probability of hydrogen-induced defects, and the effect of hydrogen consumption

Inactive Publication Date: 2021-07-27
ZHEJIANG AIKO SOLAR ENERGY TECH CO LTD +2
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Problems solved by technology

[0004] The invention provides a solar cell processing method for laser passivation treatment, which aims to solve the problem of poor passivation effect of PERC solar cells by using LED lamps in the prior art, and the finished PERC cells are heated for light passivation treatment, which will damage the finished product. The metallization structure of PERC battery affects the performance of the battery

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Embodiment Construction

[0021] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.

[0022] A solar cell processing method for laser passivation treatment provided by the present invention is to perform infrared laser irradiation passivation treatment on the coated silicon wafer at a preset temperature after the silicon wafer is coated with a dielectric film and before the silicon wafer is screen-printed, so that The hydrogen in the dielectric film changes from an inactive state to an active state, and the hydrogen is used to passivate the defects in the silicon matrix and the surface dangling bonds to reduce the defects and impurities of PERC solar cells; secondly, hydrogen obtains...

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Abstract

The invention is applicable to the technical field of solar cell processing, and provides a solar cell processing method for laser passivation treatment, which comprises the following steps of: performing texturing, diffusion, etching and dielectric film plating on a silicon wafer to prepare a coated silicon wafer; performing infrared laser irradiation passivation treatment on the coated silicon wafer at a preset temperature; and carrying out silk-screen printing and sintering on the coated silicon wafer subjected to laser irradiation passivation treatment to obtain a finished product PERC solar cell. According to the solar cell processing method for laser passivation treatment provided by the invention, infrared laser irradiation passivation treatment is carried out before screen printing of the coated silicon wafer, so that hydrogen of a dielectric film can be reduced to participate in photo-thermal attenuation or electro-attenuation of a cell, and the reliability of a PERC solar cell is effectively improved; and the conversion efficiency and the light utilization rate of the PERC solar cell are improved, and the influence on the metallization structure of the PERC solar cell can be avoided, so that the cell performance is improved.

Description

technical field [0001] The invention relates to the technical field of solar cell processing, in particular to a solar cell processing method for laser passivation treatment. Background technique [0002] With the development of crystalline silicon solar cell technology, the reliability of crystalline silicon solar cells has attracted more and more attention. At present, PERC solar cells are the mainstream products in the photovoltaic industry, but no matter gallium-doped or boron-doped PERC solar cells, the electrical attenuation is relatively serious, and the main mechanism of the electrical attenuation is hydrogen-induced defects and attenuation of metal impurities. Treat with light-induced regeneration technology (LIR), passivate defects by exciting hydrogen in the dielectric film (silicon nitride, silicon oxide or aluminum oxide), and consume hydrogen source at the same time to reduce the probability of hydrogen-induced defects. [0003] In the prior art, the processin...

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Application Information

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IPC IPC(8): H01L31/18H01L31/068
CPCH01L31/1804H01L31/1868H01L31/068Y02P70/50Y02E10/547
Inventor 吕锦滇陈伟林张欣盛健林纲正陈刚
Owner ZHEJIANG AIKO SOLAR ENERGY TECH CO LTD
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