Perovskite thin film based on PbCl2 buffer layer and preparation method and application thereof

A perovskite and buffer layer technology, applied in the field of solar cells, can solve problems such as poor photovoltaic performance of solar cells, and achieve the effects of accelerating commercial development, wide absorption spectrum, and improving energy conversion efficiency

Active Publication Date: 2021-07-30
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The present invention prepares one layer of lead chloride (PbCl 2 ) interface buffer layer for assisting FAPbI 3 The film formation of perovskite film can solve the problem of poor photovoltaic performance of solar cells prepared by evaporation method and the solar cell based on the film, which is conducive to the industrialization of perovskite solar cells

Method used

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  • Perovskite thin film based on PbCl2 buffer layer and preparation method and application thereof
  • Perovskite thin film based on PbCl2 buffer layer and preparation method and application thereof
  • Perovskite thin film based on PbCl2 buffer layer and preparation method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0037] A PbCl-based 2 The preparation method of the perovskite thin film of interface buffer layer, comprises the following steps:

[0038] Step 1. Weigh PbCl 2 Powder, FAI and lead iodide are used as evaporation sources, respectively placed in the crucible, and then put into the evaporation furnace; and the cleaned substrate is placed on the sample rack in the vacuum chamber, the door is closed, the vacuum is drawn, and the vacuum degree reach 10 -4 At the Pa level, set the substrate temperature to 30°C, the substrate is an FTO substrate and has been deposited with C60 Electron transport layer;

[0039] Step 2. Adjust PbCl 2 The evaporation rate is Start to deposit PbCl after the rate stabilizes 2 Buffer layer, deposition thickness is 5nm, turn off the evaporation power, stop PbCl 2 Deposition, the substrate is kept rotating during the deposition process;

[0040] Step 3. Setting the substrate temperature to be 85°C, adjusting the evaporation molar ratio of FAI and le...

Embodiment 2

[0045] Figure 4 For the present invention based on PbCl 2 The device structure diagram of perovskite solar cells with interface buffer layer, from bottom to top are FTO substrate, C 60 Electron transport layer, PbCl 2 Interface buffer layer, FAPbI 3 Perovskite film, Spiro-OMeTAD hole transport layer and Au electrode layer. The preparation method of described perovskite solar cell comprises the following steps:

[0046] Step 1. Select FTO conductive glass as the substrate, use acetone, ethanol, and deionized water as solvents for ultrasonic treatment in turn, dry the ITO conductive glass after ultrasonic treatment with nitrogen, and then use oxygen plasma for 12 minutes, further Remove organic matter on the surface of the substrate, while enhancing the bonding force and adhesion on the surface of the substrate material;

[0047] Step 2. adopt evaporation method to prepare C on the FTO conductive glass substrate surface 60 Electron transport layer: place the FTO substrate...

Embodiment 3

[0054] According to the steps of Example 2, PbCl-based 2 Perovskite for interfacial buffer layer, only the PbCl in step 3 2 The deposition thickness is adjusted to 10nm and 20nm, and other steps remain unchanged.

[0055] The perovskite solar cells prepared in this example were analyzed for photovoltaic performance, and the results were as follows Image 6 shown, indicating that PbCl 2 Excessive thickness will adversely affect the photovoltaic performance of the device.

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Abstract

The invention provides a perovskite thin film based on a lead chloride (PbCl2) interface buffer layer and a preparation method and application thereof, and belongs to the technical field of solar cells. According to the invention, a lead chloride (PbCl2) interface buffer layer is firstly prepared by adopting a vapor deposition method and is used for assisting in film formation of the FAPbI3 perovskite film, so that the problem that the photovoltaic performances of the perovskite film prepared by adopting an evaporation method and a solar cell prepared based on the film are relatively poor is solved, and the industrialization of the perovskite solar cell is facilitated. The energy conversion efficiency of the FAPbI3 perovskite solar cell prepared on the basis of the method can reach 15.6%.

Description

technical field [0001] The invention belongs to the technical field of solar cells, in particular to a lead chloride (PbCl 2 ) perovskite film for interfacial buffer layer and its preparation method and application. Background technique [0002] A solar cell is a device that uses the photovoltaic effect to convert light energy into electrical energy. Among them, the new perovskite solar cells have attracted widespread attention because of their excellent photoelectric properties, simple and diverse preparation processes, and low cost. Formamidine lead iodide (FAPbI 3 ) Perovskite materials are widely used in the preparation of high-efficiency and stable perovskite solar cells due to their advantages such as excellent band gap, good thermal stability, high light absorption coefficient, and longer carrier diffusion length. . [0003] The key to improving the energy conversion efficiency of perovskite solar cells lies in the optimization of film quality, so many film-formin...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/46H01L51/42H01L51/48
CPCH10K71/164H10K85/60H10K30/15H10K2102/00Y02E10/549Y02P70/50
Inventor 刘明侦方达富王铭李发明
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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