Preparation method of rapidly-thinned single-element tellurene two-dimensional material

A two-dimensional material and single-element technology, applied in the direction of element selenium/tellurium, final product manufacturing, sustainable manufacturing/processing, etc., can solve problems such as few and unfavorable applications, and achieve strong controllability, simple process, and adaptability The effect of large-scale promotion and use

Active Publication Date: 2021-08-03
ZHENGZHOU UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

At present, there are mainly the following methods for preparing tellurene materials: mechanical exfoliation, hydrothermal synthesis, physical vapor deposition, and molecular beam epitaxy. Among them, hydrothermal synthesis is the mainstream method for preparing tellurene materials. Simple, environmentally friendly, and mass-producible, but the thickness of tellurene two-dimensional materials prepared based on this method is generally greater than 100nm, which is not conducive to its subsequent application in optoelectronic devices
At present, there are few methods for studying the thickness reduction of tellurene 2D materials

Method used

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  • Preparation method of rapidly-thinned single-element tellurene two-dimensional material
  • Preparation method of rapidly-thinned single-element tellurene two-dimensional material
  • Preparation method of rapidly-thinned single-element tellurene two-dimensional material

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Embodiment 1

[0030] A preparation method for rapidly thinning a single-element tellurene two-dimensional material, specifically comprising the following steps:

[0031] (1) Preparation of single-element tellurene material precipitates by hydrothermal method: a) Weigh 1 g of polyvinylpyrrolidone and dissolve it in deionized water, and stir until the above aqueous solution is clear; b) Weigh 0.05 g of sodium tellurite and add it to the In the clarified aqueous solution described in step a), stir for 10 minutes, then add 1ml of ammonia water and 1ml of hydrazine hydrate in sequence, and continue stirring for 5 minutes to obtain a mixed solution; c) pour the mixed solution described in step b) into a hydrothermal reaction kettle , and then place the hydrothermal reaction kettle in an oven at 180° C. to grow for 6 hours; d) take out the reacted solution in the hydrothermal reaction kettle in step c), and wash it by centrifugation until the upper solution reaches a clear state, that is, Single-e...

Embodiment 2

[0036] A preparation method for rapidly thinning a single-element tellurene two-dimensional material, specifically comprising the following steps:

[0037](1) Preparation of single-element tellurene material precipitate by hydrothermal method: a) Weigh 1.5g of octadecylamine and dissolve it in deionized water, and stir until the above aqueous solution is in a clear state; b) Weigh out 0.03g of tellurous acid Add sodium into the clear aqueous solution described in step a), stir for 20 minutes, then add 1.5ml of ammonia water and 1.5ml of hydrazine hydrate to it in turn, and continue stirring for 5 minutes to obtain a mixed solution; c) pour the mixed solution described in step b) into a hydrothermal reaction kettle, and then place the hydrothermal reaction kettle in an oven at 150° C. to grow for 4 hours; d) take out the reacted solution in the hydrothermal reaction kettle in step c), and wash it by centrifugation until the solution becomes clear state, that is, the single-elem...

Embodiment 3

[0042] A preparation method for rapidly thinning a single-element tellurene two-dimensional material, specifically comprising the following steps:

[0043] (1) Preparation of single-element tellurene material precipitate by hydrothermal method: a) Weigh 2 g of sodium lauryl sulfate and dissolve it in deionized water, and stir until the above aqueous solution is in a clear state; b) Weigh out 0.07 g of tellurous acid Add sodium into the clear aqueous solution described in step a), stir for 30 minutes, then add 2ml of ammonia water and 2ml of hydrazine hydrate to it in turn, and continue stirring for 5 minutes to obtain a mixed solution; c) pour the mixed solution described in step b) into water heat the reaction kettle, and then place the hydrothermal reaction kettle in an oven at 160° C. to grow for 7 hours; d) take out the reacted solution in the hydrothermal reaction kettle in step c), and centrifugally wash until the solution reaches a clear state, The single-element tellur...

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Abstract

The invention discloses a preparation method of a rapidly-thinned single-element tellurene two-dimensional material, the preparation method mainly comprises the following steps: (1) transferring a pre-prepared single-element tellurene material precipitate into deionized water, and standing for later use; (2) continuously introducing oxygen into the deionized water dispersed with the single-element tellurene material precipitate in the step (1), and heating the deionized water to obtain a single-element tellurene material dispersion liquid; and (3) dispensing the single-element tellurene material dispersion liquid obtained in the step (2) onto a target substrate by adopting a dispensing method to obtain the thin-layer single-element tellurene two-dimensional material. According to the thinning method, the thickness of the single-element tellurene two-dimensional material can be accurately controlled by controlling the flow rate of introduced oxygen and the reaction time, other polar organic solvents do not need to be adopted, new impurity molecules cannot be introduced, and the preparation process is easy to operate, high in controllability, green, environmentally friendly and suitable for industrial production, and a rapid and controllable method is provided for the preparation of the thin-layer single-element tellurene two-dimensional material.

Description

technical field [0001] The invention belongs to the field of new nanometer materials, and in particular relates to a method for preparing a thinned two-dimensional material, in particular to a method for preparing a rapidly thinned single-element tellurene two-dimensional material. Background technique [0002] Two-dimensional materials refer to materials in which electrons can only move freely (plane motion) on the nanoscale (1-100nm) in two dimensions. It was accompanied by the successful mechanical exfoliation of single Atomic layer graphite material - graphene is proposed. Generally, two-dimensional materials have a common feature: they are van der Waals layered materials, in which atoms in the plane are connected to each other through strong covalent bonds, and then stacked into bulk materials through relatively weak van der Waals interactions. Therefore, two-dimensional materials have many advantages that bulk materials do not have. First of all, due to the quantum c...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B19/02B82Y40/00
CPCC01B19/02B82Y40/00Y02P70/50
Inventor 林沛姚金荣李新建吴翟田永涛陈芳芳李娟娟
Owner ZHENGZHOU UNIV
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