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Ceramic heating body, method, infrared heating tube and equipment

A technology of ceramic heating elements and equipment, which is applied in the fields of ceramic heating elements, infrared heating tubes, and ceramic heating elements. The effect of high production process and high yield

Active Publication Date: 2021-08-17
苏州极限深灰光电科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the processing technology is complicated, the cost is high, and there is high energy consumption in the processing process, and its maximum temperature is generally 400-600 degrees. If the working temperature is higher, it is easy to cause direct damage to the device such as slivers and fragments. High Risk Failure Phenomena

Method used

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  • Ceramic heating body, method, infrared heating tube and equipment
  • Ceramic heating body, method, infrared heating tube and equipment
  • Ceramic heating body, method, infrared heating tube and equipment

Examples

Experimental program
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Effect test

Embodiment 1

[0050] Such as figure 1 As shown, the ceramic heating element described in Embodiment 1 of the present invention; the ceramic substrate 11 is a single-layer ceramic material, and its material is preferably aluminum oxide, and can also be silicon dioxide, aluminum nitride, silicon carbide, zirconia, cordierite , Mullite and other simple substances or their composite materials;

[0051] The resistive conductive layer 12, the conductive layer 12 can be made of iron, copper, zinc, nickel, tungsten, molybdenum, tin, gold, silver, manganese, titanium, lanthanide metals and their oxides, nitrides, carbides, etc. one or more. The conductive layer 12 is generally controlled to be between 50 nanometers and 5000 nanometers, depending on specific requirements. ;

[0052] The cladding layer 13 is made of the same material or the same system as the ceramic substrate 11, and its material is preferably aluminum oxide, and can also be simple substances such as silicon dioxide, aluminum nitr...

Embodiment 2

[0055] Such as figure 2 As shown, the ceramic heating element described in Embodiment 2 of the present invention; the ceramic substrate 21 is a single-layer ceramic material, and its material is preferably aluminum oxide, and can also be silicon dioxide, aluminum nitride, silicon carbide, zirconia, cordierite , Mullite and other simple substances or their composite materials;

[0056] The resistive conductive layer 22, the conductive layer 22 can be made of iron, copper, zinc, nickel, tungsten, molybdenum, tin, gold, silver, manganese, titanium, lanthanide metals and their oxides, nitrides, carbides, etc. One or more; the conductive layer 22 is generally controlled between 50 nanometers and 5000 nanometers, depending on specific requirements.

[0057] The cladding layer 23 of the conductive resistor is the same as the single-layer ceramic material of the substrate 21 or a material of the same system, and its material is preferably aluminum oxide, and can also be silicon diox...

Embodiment 3

[0067] Such as image 3 As shown, the ceramic heating element described in Embodiment 3 of the present invention; the ceramic substrate 31 is a single-layer ceramic material, and its material is preferably aluminum oxide, and can also be silicon dioxide, aluminum nitride, silicon carbide, zirconia, cordierite , Mullite and other simple substances or their composite materials;

[0068] The resistive conductive layer 32, the conductive layer 32 can be made of iron, copper, zinc, nickel, tungsten, molybdenum, tin, gold, silver, manganese, titanium, lanthanide metals and their oxides, nitrides, carbides, etc. One or more; the conductive layer 32 is generally controlled between 50 nanometers and 5000 nanometers, depending on specific requirements.

[0069] The coating layer 33 of the conductive resistor is the same as the single-layer ceramic material of the substrate 31 or a material of the same system, and its material is preferably aluminum oxide, and can also be silicon dioxid...

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Abstract

The invention provides a ceramic heating element, a method, an infrared heating tube and equipment. The ceramic heating element comprises a ceramic substrate; a conductive layer which is positioned on one surface or two surfaces of the ceramic substrate; a heat conduction layer which is completely covered with the coating layer; and an emission enhancement layer which is located outside the coating layer. According to the ceramic heating body, the structural strength of the ceramic substrate is fully utilized, and the ceramic heating body is good in heat resistance and oxidation resistance; the production processing technology can be simplified, the processing and manufacturing cost is saved, the working temperature range is improved, and the thermal shock resistance is enhanced.

Description

technical field [0001] The invention relates to the field of heating equipment, in particular to a ceramic heating element, a method for manufacturing the ceramic heating element, an infrared heating tube using the ceramic heating element, and equipment using the ceramic heating element. Background technique [0002] Positive temperature coefficient, PTC is the English abbreviation of "Positive Temperature Coefficient". It is a new type of thermistor material, and its main application can be divided into two categories: switching and heating. The PTC heater adopts PTCR heat-sensitive ceramic elements, which are composed of several single pieces combined with corrugated heat-dissipating aluminum strips and bonded with high-temperature glue. It has the characteristics of small thermal resistance and high heat exchange efficiency. But its biggest problem is that the safety is not good. When the fan is blocked due to failure, the power of the PTC heater will automatically drop ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H05B3/14
CPCH05B3/141
Inventor 李长华刘鹏
Owner 苏州极限深灰光电科技有限公司
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