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Method for treating surface of copper-zinc-tin-sulfur-selenium film through plasma cleaning

A copper-zinc-tin-sulfur-selenium, plasma cleaning technology, applied in cleaning methods and utensils, chemical instruments and methods, sustainable manufacturing/processing, etc. Effects of Density Reduction and Interfacial Contact Improvement

Active Publication Date: 2021-09-07
CENT SOUTH UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Moreover, the solution method has a global effect on the surface of the sample, and it is difficult to form an untreated contrast area in the same sample by simply blocking a certain part, which brings difficulties to more rigorously characterize the effect of the surface treatment method

Method used

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  • Method for treating surface of copper-zinc-tin-sulfur-selenium film through plasma cleaning
  • Method for treating surface of copper-zinc-tin-sulfur-selenium film through plasma cleaning
  • Method for treating surface of copper-zinc-tin-sulfur-selenium film through plasma cleaning

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0043] A method for processing the surface of a copper-zinc-tin-sulfur-selenide film by plasma cleaning, comprising the following steps:

[0044] (1) Introduce Ar into the plasma cleaning chamber, the gas flow rate is 300mL / min, and the preparation pressure is 1×10 -2 Torr, clean the chamber with a power of 250W under no-load, and the no-load cleaning time is 10 minutes.

[0045] (2) Put the sample into the chamber, purge gas Ar:O 2 The volume ratio is 10:1, the total air flow is 300mL / min, the cleaning power is 150W, and the cleaning time is 30s.

[0046] After cleaning the surface, turn off the air path and vacuum for a period of time, take out the copper-zinc-tin-sulfur-selenide film after surface treatment, and test that no new phases are formed on the surface by Raman test, and test that the large crystals on the surface are intact without obvious etching by SEM test crumbs.

Embodiment 2

[0048] A method for processing the surface of a copper-zinc-tin-sulfur-selenide film by plasma cleaning, comprising the following steps:

[0049] (1) Feed Ar into the plasma cleaning chamber, the gas flow rate is 200mL / min, and the preparation pressure is 1×10 -3 Torr, clean the chamber with no-load power of 150W, and the no-load cleaning time is 20min.

[0050] (2) Put the sample into the chamber, purge gas Ar:O 2 The volume ratio is 5:1, the total air flow is 350mL / min, the cleaning power is 200W, and the cleaning time is 20s.

[0051] After cleaning the surface, turn off the air path and vacuum for a period of time, take out the copper-zinc-tin-sulfur-selenide film after surface treatment, and test that no new phases are formed on the surface by Raman test, and test that the large crystals on the surface are intact without obvious etching by SEM test crumbs.

Embodiment 3

[0053] A method for processing the surface of a copper-zinc-tin-sulfur-selenide film by plasma cleaning, comprising the following steps:

[0054] (1) Introduce Ar into the plasma cleaning chamber, the gas flow rate is 400mL / min, and the preparation pressure is 1×10 0 Torr, clean the chamber with a power of 300W under no-load, and the no-load cleaning time is 5 minutes.

[0055] (2) Put the sample into the chamber, purge gas Ar:O 2 The volume ratio is 2:1, the total air flow is 400mL / min, the cleaning power is 250W, and the cleaning time is 10s.

[0056] After cleaning the surface, turn off the air path and vacuum for a period of time, take out the copper-zinc-tin-sulfur-selenide film after surface treatment, and test that no new phases are formed on the surface by Raman test, and test that the large crystals on the surface are intact without obvious etching by SEM test crumbs.

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Abstract

The invention discloses a method for treating the surface of a copper-zinc-tin-sulfur-selenium (Cu2ZnSn (S, Se) 4) film through plasma cleaning. The method for treating the surface of the copper-zinc-tin-sulfur-selenium (Cu2ZnSn (S, Se) 4) film through plasma cleaning comprises the following steps that (1), no-load cleaning is carried out on a plasma cleaning chamber before surface treatment; (2), a copper-zinc-tin-sulfur-selenium film sample is put, vacuumizing is carried out until a cavity reaches a specified air pressure, and keeping for a certain time is carried out; (3), Ar or a mixed gas of Ar and O2 are pre-introduced, keeping for a certain time is carried out, and surface cleaning is started at specified power; and (4), after the surface is cleaned for a specified time, a gas path is closed, and vacuumizing is carried out for a period of time to obtain a sample subjected to surface treatment. According to the method for treating the surface of the copper-zinc-tin-sulfur-selenium (Cu2ZnSn (S, Se) 4) film through plasma cleaning, a high-conductivity phase on the surface of the copper-zinc-tin-sulfur-selenium film is removed in a plasma cleaning mode, the surface roughness of the sample is reduced, a new phase is not formed, the influence and residue of a solution on the sample are avoided, and a contrast test can be easily carried out under the same condition in a shielding mode and the like.

Description

technical field [0001] The invention relates to the fields of photovoltaic devices and photocatalysis and photoelectric catalysis, in particular to a method for treating the surface of a copper-zinc-tin-sulfur-selenide thin film by plasma cleaning. Background technique [0002] The energy problem is a worldwide problem and is closely related to people's social life. Solar energy has always occupied an important position in human history. It is undoubtedly a clean energy with huge reserves and almost inexhaustible. According to statistics, the energy irradiated by the sun on the surface of the earth per second is as high as 1.757×10 17 Joules, if 0.01% of that energy could be captured and used, could meet the world's energy needs. However, the distribution of solar energy on the earth's surface and its dispersion have large regional differences, which is not conducive to further utilization. Therefore, collecting scattered solar energy into concentrated clean energy is an ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B08B7/00H01L31/032H01L31/18
CPCB08B7/00H01L31/18H01L31/0326Y02P70/50
Inventor 刘芳洋章丰庆蒋良兴贾明张宗良赵祥云潘逸宁黄子仪
Owner CENT SOUTH UNIV
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