Ga-GaSb nano material and preparation method thereof

A nanomaterial and solution technology, applied in nanotechnology, nanotechnology, chemical instruments and methods, etc., can solve problems such as unfavorable large-scale production development, in-depth GaSb, and limited application.
CN113353979AActive Publication Date: 2021-09-07UNIV OF SCI & TECH OF CHINA
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
UNIV OF SCI & TECH OF CHINA
Publication Date
2021-09-07

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Abstract

The invention provides a Ga-GaSb nano material and a preparation method of the Ga-GaSb nano material. The preparation method provided by the invention is a solution phase synthesis method, a specific organic gallium source-trimethyl amino gallium dimer (C12H36Ga2N6) and an organic antimony source-triphenyl antimony (Sb(Ph)3) are taken as precursors, a reaction is carried out in a specific reaction medium octadecene, the Ga-GaSb nano material can be synthesized through one-step heating, and the obtained material has high dispersion and high purity. In the reaction system, a catalyst does not need to be used, the reaction is promoted through autocatalysis, and the reaction temperature and the reaction time are greatly reduced. According to the preparation method provided by the invention, on the premise of ensuring the high purity of the Ga-GaSb nano material, the synthesis temperature is greatly reduced, the synthesis time is greatly shortened, the operation is convenient, and the method is simple and easy to implement.
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Description

technical field

[0001] The invention relates to the field of semiconductor materials, in particular to a preparation method of Ga-GaSb nanometer material. Background technique

[0002] GaSb is a Ⅲ-Ⅴ group compound semiconductor material, which has high carrier mobility and narrow band gap, so it is considered to be the first choice material for optoelectronic semiconductor devices in the mid-infrared band. Therefore, the production and preparation of GaSb is of great significance.

[0003] However, the research on the preparation of GaSb is far less in-depth than that of other semiconductor materials (such as GaAs, InP, etc.). At present, the preparation of GaSb is often realized through gas phase reactions. However, the gas-phase reaction of GaSb requires high temperature conditions and the participation of catalysts, which is not conducive to the development of large-scale production, and its application is limited. Contents of the invention

[0004] In view of this, t...

Claims

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