Grating coupling structure based on back process and preparation method

A technology of grating coupling and grating structure, which is applied in the waveguide grating coupling structure, grating coupling structure and corresponding preparation fields, can solve the problems of limited compatibility and scalability, metal mirror process pollution, etc., and achieve maximum compatibility and reliability Expansibility, good consistency, and the effect of reducing coupling loss

Inactive Publication Date: 2021-09-07
UNITED MICROELECTRONICS CENT CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Commonly used reflectors are usually located on the BOX layer of the SOI wafer to increase the front light reflection efficiency of the grating. This design greatly reduces the coupling efficiency of the grating-fiber, but it needs different reflector heights for different light bands. , this architecture limits system compatibility and scalability to a certain extent
At present, another type of coupling grating adopts back-to-back technology, but it often uses metal reflectors, and there is a problem of process pollution in the back end of metal reflectors.

Method used

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  • Grating coupling structure based on back process and preparation method
  • Grating coupling structure based on back process and preparation method
  • Grating coupling structure based on back process and preparation method

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Embodiment 1

[0038]In Embodiment 1 of the present invention, a grating coupling structure based on a back-facing process is provided, including: a first transition layer, a waveguide diffraction grating layer, a second transition layer, a mirror layer, a third transition layer and The carrier sheet; the second transition layer covers the waveguide diffraction grating layer and is connected with the first transition layer; the reflection mirror layer is a non-metal structure, and the projection covers the waveguide diffraction grating layer.

[0039] Such as figure 1 As shown, the structure of the grating coupling structure from bottom to top is the first transition layer 1 , the waveguide diffraction grating layer 2 , the second transition layer 3 , the mirror layer 4 , the third transition layer 5 and the carrier 6 .

[0040] In the embodiment of the present invention, a grating coupling structure based on a back-to-back process is provided on the waveguide diffraction grating layer 2 wit...

Embodiment 2

[0042] Embodiment 2 is an example of the material and thickness range of each layer in the grating coupling structure, still refer to figure 1 , the material of the first transition layer 1, the second transition layer 3, and the third transition layer 5 is SiO 2 The thickness of the first transition layer 1 is less than 10 μm, the thickness of the waveguide diffraction grating layer 2 is less than 1 μm, and the thickness of the second transition layer 3 is in the range of 0-10 μm; the thickness of the first transition layer 1 is greater than the thickness of the waveguide diffraction grating layer 2; The thickness of the second transition layer 3 depends on the height of reflection enhancement according to the design requirements; the thickness selection range of the third transition layer 5 only needs to meet the requirements of the bonding process.

[0043] In this embodiment, the exemplary thickness of the first transition layer 1 is 2 μm; the exemplary thickness of the wa...

Embodiment 3

[0045] In embodiment three, refer to figure 2 , the mirror layer 4 is composed of a distributed Bragg reflector structure (DBR, Distributed Bragg Reflector) based on a multilayer dielectric film. The DBR structure is specifically a periodic structure composed of two materials with different refractive indices arranged alternately. Dielectric layer materials commonly used in existing processes Si, Si 3 N 4 According to the reflection wavelength and the refractive index of the dielectric film, the thickness of the dielectric film layer can be reasonably designed to achieve the effect of reflection enhancement.

[0046] The physical thickness of each dielectric film layer of the distributed Bragg reflector structure is recorded as t to satisfy: ,in is the central wavelength, is the effective refractive index of each dielectric layer; the total thickness of the DBR structure in this embodiment is less than 2 μm.

[0047] Such as figure 2 As shown, there are first transi...

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Abstract

The invention provides a grating coupling structure based on a back process. A nonmetal structure reflector layer is arranged on a waveguide diffraction grating layer, so that the coupling efficiency of the grating is greatly improved, and the grating-optical fiber coupling loss is reduced. The reflector layer adopts at least one distributed Bragg reflector structure or grating reflector structure, has no metal absorption problem, is more resistant to high temperature, is more compatible with a traditional optical device without causing unnecessary loss, and has no pollution problem of a rear-section process of a metal reflector. The invention further provides a preparation method of the grating coupling structure based on the back process, a standard wafer is adopted as an initial wafer, the single-step etching process is simple, and the optical coupling reflection requirement of a larger bandwidth can be met through single deposition etching; on the basis of not influencing the original architecture, the reflection height requirements of different wave bands can be flexibly met according to the design requirements, so that corresponding advantages are achieved.

Description

technical field [0001] The invention relates to the technical field of photonic devices, and relates to a waveguide grating coupling structure, in particular to a grating coupling structure based on a back-to-back process and a corresponding preparation method. Background technique [0002] Silicon-on-insulator (SOI), based on silicon-on-insulator (SOI), is considered to be an important direction for the future development of integrated optics because of its CMOS process compatibility, ultra-small integration, and active and passive monolithic integration. One of the key problems to be solved in the development of SOI-based integrated optics is the coupling problem between fiber and chip. The core size of a single-mode fiber is generally 10.4 μm, while the width of a single-mode Si waveguide based on SOI is usually sub-micron, and the huge size difference will lead to a large coupling loss. [0003] One of the commonly used coupling structures is the grating coupling struct...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G02B6/26G02B6/34
CPCG02B6/264G02B6/34
Inventor 吴月朱继光宁宁潘伯津
Owner UNITED MICROELECTRONICS CENT CO LTD
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