Stepped high-voltage-resistant thin film capacitor and preparation method thereof

Abstract

The invention relates to a stepped high-voltage-resistant thin film capacitor and a preparation method thereof. The preparation method comprises the following steps: cleaning a monocrystalline silicon wafer; preparing a SiO2 film on the upper surface of the monocrystalline silicon wafer; preparing a Si3N4 film on the upper surface of the SiO2 film; then carrying out heat treatment; preparing a first TaN thin film on the upper surface of the Si3N4 thin film; preparing a first metal film electrode layer on the upper surface of the first TaN film; preparing a second TaN thin film on the lower surface of the monocrystalline silicon wafer; preparing a second metal film electrode layer on the lower surface of the second TaN film; coating photoresist on the first metal film electrode layer, and exposing; performing wet etching / patterning on the first metal film electrode layer and the first TaN film layer; coating the photoresist on the first metal film electrode layer and the first TaN film layer which are subjected to wet etching / patterning for the second time, and exposing the first metal film electrode layer and the first TaN film layer; etching the Si3N4 thin film and the SiO2 thin film; and cutting up to obtain the high-voltage-resistant thin film capacitor. According to the capacitor, short circuit of the capacitor caused by an overhigh electric field formed at the tip of the electrode edge under high voltage can be avoided.

Description

technical field [0001] The invention relates to the field of capacitors, in particular to a stepped high withstand voltage film capacitor and a preparation method thereof. Background technique [0002] Capacitors are one of the three basic components of electronic circuits (capacitance, resistance, inductance). With the continuous development of micro-assembly technology and the increasing frequency of use of electronic products, capacitors suitable for gold wire bonding and excellent high-frequency performance are increasingly favored by users. Although single-layer chip ceramic capacitors based on ceramic dielectrics account for the vast majority of the market for capacitors used in micro-assembly due to their high reliability, suitability for micro-assembly, and excellent microwave performance, but semiconductor silicon-based capacitors Film capacitors have a price advantage, compared with ceramic capacitors, they have smaller dielectric loss tangent, better temperature ...

AI Technical Summary

Problems solved by technology

These charges undergo directional movement under the action of an external electric field, and eventually form avalanche current, tunneling current or space charge limited current, etc., resulting in breakdown failure of the insulating dielectric layer film

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