Deep ultraviolet electro-catalysis assisted magnetorheological elastomer leveling device and method

Abstract

The invention discloses a deep ultraviolet electro-catalysis assisted magnetorheological elastomer leveling device and method. A polishing device comprises a polishing disc and a first driving mechanism; a magnetorheological elastomer polishing mechanism and a nozzle are arranged above the polishing disc; a plurality of light source grooves are formed in the upper surface of the polishing disc, deep ultraviolet light sources are arranged in the light source grooves, and a gallium oxide crystal clamping mechanism is arranged above the deep ultraviolet light sources; the nozzle is arranged at the lateral upper portion of the clamping mechanism; the magnetorheological elastomer polishing mechanism comprises a tool shaft, a polishing tool head and a second driving mechanism; and the tool shaft is connected with the polishing disc through a wire and an electric brush. According to the deep ultraviolet electro-catalysis assisted magnetorheological elastomer leveling device and method, a gallium oxide wafer is subjected to efficient, ultra-smooth and lossless polishing through the polishing device, so that a lossless surface with sub-nano-scale roughness can be obtained.

Description

technical field [0001] The invention relates to a gallium oxide crystal deep ultraviolet electrocatalysis assisted magnetorheological elastomer flattening device and method, belonging to the technical field of ultra-precision processing of semiconductor materials. Background technique [0002] With the development of application requirements in the fields of semiconductor lighting, high-power power electronic devices, lasers and detectors, gallium oxide (Ga 2 o 3 ) as the representative of the fourth-generation ultra-wide bandgap semiconductor materials have received extensive attention. [0003] Generally speaking, an ultra-smooth and non-destructive surface is a necessary condition for improving the performance of semiconductor devices, and qualified gallium oxide wafers must undergo processes such as slicing, thinning (grinding), and flat polishing, among which the final flat polishing is to improve surface flatness and reduce The surface roughness and damaged layer are...

AI Technical Summary

Problems solved by technology

[0005] Although chemical mechanical polishing can effectively reduce the surface roughness, the distribution of abrasives is unstable and requires normal pressure, which can easily induce lattice defects in the subsurface layer of gallium oxide materials, weakening device performance, making it difficult to control the processing quality stably, and the yield rate Low, long process time, low production efficiency and other issues

Therefore, the existing chemical mechanical polishing technology cannot fully meet the production needs of gallium oxide devices

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