hemt device and its self-isolation method and manufacturing method

A technology of devices and conditions, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems affecting device dynamic characteristics, deep energy level defects, device surface leakage, etc., to avoid collapse effect and reduce process complexity Degree and manufacturing cost, the effect of increasing the breakdown voltage
CN113394096BActive Publication Date: 2022-05-31NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI
Publication Date
2022-05-31

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Abstract

The invention discloses a HEMT device, a self-isolation method and a manufacturing method thereof. The self-isolation method includes: epitaxially growing an epitaxial layer with a lateral polar structure on a substrate with a patterned low-temperature crystallization layer on the surface, and adjusting the epitaxial growth conditions to make the surface of the formed metal polar region and the nitrogen polarity There is a set height difference between the surfaces of the regions, so that the two-dimensional electron gas or the two-dimensional hole gas formed in any one of the metal polar region and the nitrogen polar region is blocked by the other, which Either is used to fabricate HEMT bulk structures. An isolation method for a HEMT device provided by an embodiment of the present invention realizes isolation synchronously when the growth of the epitaxial structure is completed, without additional processes such as photolithography, plasma etching, or ion beam implantation.
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Description

HEMT device, self-isolation method and fabrication method thereof technical field The present invention relates to a kind of isolation method of HEMT device, particularly a kind of HEMT device and self-isolation method thereof, The manufacturing method belongs to the technical field of semiconductors. Background technique

[0002] High electron mobility transistors (HEMTs) based on GaN / AlGaN heterojunctions are expected to replace traditional silicon-based devices. Low-energy-loss power conversion and signal transmission under high-frequency and high-power working conditions, thus enabling high-speed rail and new energy vehicles It has been widely used in the fields of rate control units, smart grid chips, and microwave radio frequency front-ends for 5G. depletion HEMT Taking the device as an example, its schematic diagram is shown in Figure 1, which is mainly composed of a barrier layer 1, a channel layer 2, a buffer layer 3, and a substrate 4 [S.Wienecke,B.Romancz...

Claims

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