Preparation method of ceramic composite polytetrafluoroethylene type microwave composite dielectric substrate
A technology of polytetrafluoroethylene and composite media, which is applied in the field of electronic components and ceramic materials for microwave electronic components, can solve the problems of unsuitable mixing uniformity and continuous batch production, and achieve high production efficiency, good dispersion uniformity, good uniformity
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Embodiment 1
[0030] Choose silicon dioxide as filler, use silane coupling agent to carry out surface treatment on it, the silane coupling agent is 2% of the mass of silicon dioxide, the surface modified ceramic powder and polytetrafluoroethylene emulsion according to the mass ratio of 60% Silicon dioxide + 40% polytetrafluoroethylene is used for batching and stirring. After stirring for 4 hours, while stirring the mixed solution, use a vacuum pump to pump the mixed solution to the atomizer. The atomizer speed is 6000r / min, and the inlet temperature The compound dough is prepared at 250°C and the outlet temperature is 110°C. The prepared compound dough is calendered and then hot-pressed and sintered. The hot-pressed sintering temperature is 370°C, the pressure is 7Mpa, and the time is 2h. Silicon composite polytetrafluoroethylene type high frequency microwave composite dielectric substrate with a dielectric constant of 3.0.
Embodiment 2
[0032] Titanium dioxide is selected as the filler, and its surface is also treated with a silane coupling agent. The silane coupling agent is 1.5% of the mass of titanium dioxide. Tetrafluoroethylene is compounded, and then demulsification, calendering, and hot-press sintering are carried out according to the method in embodiment 1 to prepare a titanium dioxide composite polytetrafluoroethylene type high-frequency microwave composite dielectric substrate with a dielectric constant of 11.
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