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Transition metal compound hydrogen evolution film and radio frequency backwash modification preparation method

A technology of transition metals and compounds, applied in the field of electrocatalytic hydrogen evolution, to achieve the effect of improving catalytic activity

Pending Publication Date: 2021-09-17
李新中
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the modified WS etched by RF backsputtering 2 Thin films to improve HER catalytic activity have not been reported yet

Method used

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  • Transition metal compound hydrogen evolution film and radio frequency backwash modification preparation method
  • Transition metal compound hydrogen evolution film and radio frequency backwash modification preparation method
  • Transition metal compound hydrogen evolution film and radio frequency backwash modification preparation method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0034] like figure 1 As shown, a transition metal compound hydrogen evolution thin film includes a base layer and a hydrogen evolution catalytic layer, the hydrogen evolution catalytic layer is arranged on the surface of the base layer, and the hydrogen evolution catalytic layer is a transition metal sulfur compound, a transition metal selenium compound and one of the transition metal tellurium compounds.

[0035] In this embodiment, the hydrogen evolution catalytic layer is MoS 2 、WS 2 、MoSe 2 、WSe 2 、MoTe 2 and WTe 2 A film made of one of the materials.

[0036] In this embodiment, the base layer is made of metal or ceramics;

[0037] When the base layer is metal, the metal is V, Nb, Ta, Mo, Ni, Ti, Pd, Pt, porous stainless steel, V / Ni alloy, V / Cr alloy, V / Cu alloy, V / Fe alloy, V / Al alloy, V / Co alloy, V / Mo alloy, V / W alloy, V / Ti / Ni alloy, V / Fe / Al alloy, V / Mo / W alloy, Nb / Ti / Ni alloy, Nb / Ti / One of Co alloy and Nb / Mo / W alloy;

[0038] When the base layer is ceramic,...

Embodiment 2

[0040] A method for preparing a transition group metal compound hydrogen evolution thin film by radio frequency backsputtering modification, characterized in that, according to the following steps:

[0041] Step 1: pretreating the base layer 1;

[0042] Step 2: cleaning the surface of the base layer 1 with an ion beam;

[0043] Step 3: using one of chemical vapor deposition, hydrothermal synthesis, magnetron sputtering, ion beam sputtering, electron beam evaporation, pulse deposition, molecular beam epitaxy and atomic layer deposition to form a hydrogen evolution catalytic layer 2 on the surface of the base layer 1 ;

[0044] Step 4: irradiating and etching the surface of the hydrogen evolution catalytic layer 2 by means of radio frequency backsputtering.

[0045] In this embodiment, in step 1, the base layer is ultrasonically cleaned for 5-15 minutes with acetone and absolute ethanol in sequence, repeated 2-3 times, and then rinsed with deionized water for 1-2 minutes, and th...

Embodiment 3

[0052] Referring to the preparation method of radio frequency backsputtering modification in Example 2, the sputtering power in Step 4 is 100V, the irradiation time is 2min, and the other steps and parameters are the same as in Example 2.

[0053] The obtained SEM image is as Figure 4 shown.

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Abstract

The invention relates to the technical field of electro-catalysis hydrogen evolution, in particular to a transition metal compound hydrogen evolution film which comprises a substrate layer and a hydrogen evolution catalyst layer arranged on the surface of the substrate layer. The hydrogen evolution catalyst layer is a thin film formed by one of a transition metal sulfur compound, a transition metal selenium compound and a transition metal tellurium compound, and ionized Ar plasma generated by radio frequency backwash randomly irradiates a sample to generate an etching effect, so that random etching in a whole hydrogen evolution thin film plane is formed; the catalytic activity of the hydrogen evolution film is obviously improved.

Description

technical field [0001] The invention relates to the technical field of electrocatalytic hydrogen evolution, in particular to a transition metal compound hydrogen evolution thin film and a preparation method for radio frequency backsputtering modification. Background technique [0002] In recent years, due to the increasing demand for energy and environmental protection, hydrogen energy as a green high-calorific value energy fuel has received great attention. Hydrogen production from water electrolysis usually uses the noble metal Pt as a catalyst, mainly because of the low hydrogen evolution overpotential of Pt and the fast kinetics of HER. However, the high cost and low stability of Pt severely hinder the large-scale commercialization of hydrogen energy production. Therefore, it is of great significance to develop efficient, stable, and inexpensive non-noble metal catalysts that can replace Pt. [0003] Many non-noble metal materials, such as transition metal sulfur compo...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C25B11/052C25B11/031C25B11/061C25B11/063C25B11/067C25B11/075C23C14/06C23C14/35C23C14/58C25B1/04
CPCC25B11/052C25B11/031C25B11/075C25B11/061C25B11/063C25B11/067C25B1/04C23C14/35C23C14/0623C23C14/5873C23C14/5833Y02E60/36
Inventor 李新中尹相鑫刘京京
Owner 李新中
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