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Texturing additive suitable for monocrystalline silicon wafer and application

A monocrystalline silicon wafer and additive technology, applied in the direction of single crystal growth, single crystal growth, sustainable manufacturing/processing, etc., can solve the problems of increased production cost, complicated process flow, increased chemical alkali consumption, etc., and achieve reduction Consumption, simplification of process flow, and the effect of reducing production costs

Active Publication Date: 2021-09-21
CHANGZHOU SHICHUANG ENERGY CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, the existing texturizing additives are easy to increase the consumption of chemical alkali, and the process is complicated, which leads to an increase in production cost

Method used

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  • Texturing additive suitable for monocrystalline silicon wafer and application

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0031] The texturing method of monocrystalline silicon chip of the present invention, concrete steps comprise:

[0032] (1) Preparation of velvet additives: 0.1% sodium lignosulfonate, 0.01% glycerol polyether, 0.3% hydroxyethyl-β-cyclodextrin, 0.5% 1,4-bis (2-Hydroxyethyl)piperazine is added to the deionized water of the remainder, and mixed evenly to make a texture additive;

[0033] (2) Preparation of texturing liquid: prepare 0.4wt% sodium hydroxide aqueous solution in the texturing tank, add the texturing additive in step (1) into the aqueous sodium hydroxide solution at a mass ratio of 1:100 and mix well , to obtain cashmere liquid;

[0034] (3) Texturing: immerse the monocrystalline silicon wafer in the texturing solution prepared in step (2) for surface texturing, the texturing temperature is 83°C, and the texturing time is 7 minutes;

[0035] (4) Cleaning: After washing the monocrystalline silicon wafer that has been textured in step (3), immerse it in a mixed acid ...

Embodiment 2

[0038] The texturing method of monocrystalline silicon chip of the present invention, concrete steps comprise:

[0039] (1) Preparation of velvet additives: 0.2% sodium lignosulfonate, 0.02% glycerol polyether, 0.6% hydroxyethyl-β-cyclodextrin, 1.5% N-(2- Hydroxyethyl) piperazine is added to the deionized water of surplus, mixes and is made into the texture additive;

[0040] (2) Preparation of texturing liquid: Prepare 0.7wt% sodium hydroxide aqueous solution in the texturing tank, add the texturing additive in step (1) into the aqueous sodium hydroxide solution at a mass ratio of 0.8:100 and mix well , to obtain cashmere liquid;

[0041] (3) Texturing: immerse the monocrystalline silicon wafer in the texturing solution prepared in step (2) for surface texturing, the texturing temperature is 83°C, and the texturing time is 7 minutes;

[0042] (4) Cleaning: After washing the monocrystalline silicon wafer that has been textured in step (3), immerse it in a mixed acid containi...

Embodiment 3

[0044] The texturing method of monocrystalline silicon chip of the present invention, concrete steps comprise:

[0045] (1) Preparation of velvet additives: 0.1% sodium lignosulfonate, 0.01% sorbitan, 0.5% carboxymethyl-β-cyclodextrin, 0.8% 1,4- Bis(2-hydroxyethyl)piperazine is added to the remaining amount of deionized water, and mixed evenly to make a texture additive;

[0046] (2) Preparation of texturing liquid: Prepare 0.3wt% sodium hydroxide aqueous solution in the texturing tank, add the texturing additive in step (1) into the aqueous sodium hydroxide solution at a mass ratio of 0.8:100 and mix evenly , to obtain cashmere liquid;

[0047] (3) Texturing: immerse the monocrystalline silicon wafer in the texturing solution prepared in step (2) for surface texturing, the texturing temperature is 83°C, and the texturing time is 7 minutes;

[0048] (4) Cleaning: After washing the monocrystalline silicon wafer that has been textured in step (3), immerse it in a mixed acid cont...

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Abstract

The invention discloses a texturing additive suitable for a monocrystalline silicon wafer and application. The texturing additive is prepared from the following components in percentage by mass: 0.01 to 1 weight percent of main nucleating agent, 0.001 to 0.1 weight percent of auxiliary nucleating agent, 0.1 to 2 weight percent of suede modifier, 0.1 to 3 weight percent of defoaming agent and the balance of deionized water. According to the texturing additive disclosed by the invention, the dosage of inorganic base is reduced, and hydrogen peroxide cleaning is not needed after texturing, so that the consumption of chemicals is greatly reduced, the process flow is simplified, and the production cost of the solar cell is finally reduced.

Description

technical field [0001] The invention relates to the technical field of solar cell production, in particular to a texturing additive suitable for monocrystalline silicon wafers and its application. Background technique [0002] The texturing process of solar cell production is to form a textured surface on the surface of silicon wafers to create light traps and increase the absorption of sunlight by silicon wafers. The texturing of monocrystalline silicon wafers is based on the differential corrosion between different crystal planes of silicon wafers in alkaline solutions, forming a pyramid structure on the surface of silicon wafers, but only with alkaline solutions, differential corrosion is not easy to reflect, and pyramids cannot be formed surface, and the function of the texture additive is to further enlarge the differential corrosion between the crystal planes, and then form a pyramid texture on the surface of the silicon wafer. At present, in order to improve the text...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B33/10C30B29/06H01L31/18
CPCC30B33/10C30B29/06H01L31/1804Y02P70/50Y02E10/547
Inventor 丁俊勇李海周树伟张丽娟陈培良
Owner CHANGZHOU SHICHUANG ENERGY CO LTD
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