Ferromagnetic insulating material and its preparation method and application
An insulating material, ferromagnetic technology, applied in the field of materials, can solve the problems of low saturation magnetization, low coercivity, mediocre magnetic properties of ferrite, etc., and achieve the effect of excellent ferromagnetic properties
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Embodiment 1
[0039] The molar ratio of BaO to Fe is 2:1 2 O 3The powders are mixed together. Use mechanical ball milling or manual milling, mix well, and perform pre-sintering at 1000°C for 11 hours. After pre-firing, cool down to room temperature with the furnace, then use mechanical ball mill or manual grinding to crush the sintered block into powder, and continue to grind for 3 hours. Then put it into a mold, press the tablet on a tablet press, apply a pressure of 30Mpa, hold the pressure for about 10 minutes, and press it into a cylindrical target block with a diameter of about 20 mm and a height of about 5 mm.
[0040] After ensuring that the target block has no cracks, otherwise it must be ground into powder again and re-pressed, the target block is sintered at 1250 ° C for 12 hours, and cooled to room temperature with the furnace to complete the target preparation.
[0041] The target is placed in the PLD chamber, and the pressure in the chamber is evacuated to 0.01Pa, and the Sr...
Embodiment 2
[0045] The substrate of this embodiment adopts KTaO 3 .
[0046] Regarding the preparation of the target material in this example, all the process conditions except the pre-sintering conditions are the same as those in Example 1, and the pre-sintering conditions are changed to pre-sintering at 900° C. for 12 hours.
[0047] After the target is prepared, the target is placed in the PLD cavity, and the pressure in the cavity is evacuated to 0.05Pa, and the KTaO 3 The single crystal substrate was adhered to the heating tray and heated to 700°C. The target was bombarded with the same pulsed ultraviolet laser as in Example 1 to generate a plasma plume and deposited on the substrate. The pulse frequency and growth time were the same as those in Example 1. After the growth, the laser was turned off, the cavity pressure was maintained at 0.05Pa, the substrate temperature was 700°C, and annealing was performed for 10min. After annealing, it is naturally cooled to room temperature, an...
Embodiment 3
[0049] The substrate of this embodiment adopts DyScO 3 .
[0050] Regarding the preparation of the target material in this example, all the process conditions except the pre-sintering conditions are the same as those in Example 1, and the pre-sintering conditions are changed to pre-sintering at 1100° C. for 10 hours.
[0051] After the target is prepared, the target is placed in the PLD cavity, and the pressure in the cavity is evacuated to 0.1Pa, and the DyScO 3 The single crystal substrate was adhered to the heating tray and heated to 650°C. The target was bombarded with the same pulsed ultraviolet laser as in Example 1 to generate a plasma plume and deposited on the substrate. The pulse frequency and growth time were the same as those in Example 1. After the growth, the laser was turned off, the pressure in the cavity was maintained at 0.1 Pa, the substrate temperature was 650 °C, and the annealing was performed for 15 min. After annealing, it is naturally cooled to room ...
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Abstract
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