Silicon-based three-dimensional integrated transceiving front end

A three-dimensional, silicon-based technology, applied in electrical solid devices, semiconductor devices, semiconductor/solid-state device components, etc., can solve the problems of large RF signal loss, unfavorable system integration, large volume, etc., to achieve low radiation loss, integrated The effect of high degree and small volume

CN113539998APending Publication Date: 2021-10-22南京国博电子股份有限公司
3 Cites 0 Cited by

Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Publication Date
2021-10-22

Smart Images

  • Figure 1
    Figure 1
  • Figure 2
    Figure 2
  • Figure 3
    Figure 3
Patent Text Reader

Abstract

The invention discloses a silicon-based three-dimensional integrated transceiving front end, which comprises a silicon-based antenna radiation layer, an antenna feed network layer, a radio frequency signal vertical transmission layer, a packaging chip module layer and an input / output port layer; the antenna feed network layer comprises a closed air cavity structure, high-density three-dimensional vertical silicon through holes are integrated in the radio-frequency signal vertical transmission layer, and the radio-frequency signal vertical transmission layer is bonded with the antenna feed network layer through a wafer-level bonding process; a radio frequency transceiving chip, a beam control chip and a power supply modulation chip are integrated in the packaging chip module layer through a FanOut packaging process, and the chips are connected with one another through multi-layer rewiring; and a high-density ball grid array is integrated in the input / output port layer. The antenna, the TSV and the packaging chip module are three-dimensionally integrated into the radio frequency transceiving front end, and the radio frequency transceiving front end has the technical advantages of being small in size, light in weight, high in integration level and the like.
Need to check novelty before this filing date? Find Prior Art

Description

technical field

[0001] The invention relates to radio frequency communication technology, semiconductor technology and silicon-based packaging technology, in particular to a silicon-based three-dimensional integrated transceiver front end. Background technique

[0002] With the vigorous development of the 5G communication industry and radar system technology, miniaturization, light weight and low cost have become important directions for the development of the transceiver front-end. The traditional RF transceiver front-end is built with discrete components, which has the disadvantages of large volume and heavy weight, which is not conducive to system integration. At the same time, due to the interconnection mode of gold wire bonding and coaxial connectors between chips and modules, the loss of radio frequency signals is large. Three-dimensional integration technology means that the circuit is no longer limited to the X-Y plane, and high-density stacking of RF circuits can b...

Examples

Embodiment Construction

[0027] The technical solutions of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0028] The present invention designs a silicon-based three-dimensional integrated transceiver front end, such as figure 1 As shown, it includes silicon-based antenna radiation layer, antenna feed network layer, radio frequency signal vertical transmission layer, packaging chip module layer and input / output port layer. The antenna feed network layer is arranged under the radiation layer of the silicon-based antenna, such as figure 2 As shown, the antenna feeding network layer includes a closed air cavity structure, the air cavity structure is processed by MEMS etching process, and the radio frequency transmission line mode in the antenna feeding network layer is a coplanar waveguide. The radio frequency signal vertical transmission layer is arranged below the antenna feed network layer, and a high-density three-dimensional vertical through...