A kind of quartz wafer etching additive and preparation method thereof

Abstract

A quartz wafer etching additive is composed of the following components according to weight percentage: 12% to 25% of a phase stable solvent, 1% to 5% of a penetrant, 4% to 8% of a dispersant, and 20% of a chelating corrosion inhibitor. ~30%, wetting agent 15%~25%, foam breaker 8~12%, bump inhibitor 10%~20%, sedimentation agent 1%~2%. The etching solution prepared with the additive of the invention has high removal rate, stable rate and long service life, the etching operation can be completed by soaking at room temperature, and the wafer can be easily washed with water after etching; the etching solution with the additive of the invention is added, and the microscopic appearance of the etched wafer surface is smooth Smooth, thickness tolerance is less than or equal to 0.2um, good dispersion, wetting and sedimentation functions of the additive can reduce the unevenness of etching slag after etching, suspension in solution, and adsorption on the wafer surface. Inhibit acid volatilization and etching acid loss, mild and non-irritating odor.

Description

technical field [0001] The invention relates to the technical field of semiconductor material processing, in particular to a quartz wafer etching additive and a preparation method thereof. Background technique [0002] Quartz crystal is an electronic material second only to monocrystalline silicon. It is used to manufacture electronic components that select and control frequency. It is widely used in various fields of the electronic information industry, such as color TVs, air conditioners, computers, DVDs, wireless communications, etc., especially The application in high-performance electronic equipment and digital equipment is expanding day by day, and low-corrosion tunnel density crystal materials are necessary materials for the production of SMD frequency chips and mobile phone frequency chips. [0003] No matter how fine the final abrasive is after the quartz wafer is ground, there is always a damage layer composed of abrasive and quartz particles on the surface of the ...

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Problems solved by technology

[0008] In order to overcome the defects of the above-mentioned prior art, the present invention needs to provide high removal rate and stable rate, long life, easy water cleaning of the wafer after etching, and an etching solution additive that can complete the etching operation after soaking at normal temperature, and the microscopic appearance of the wafer surface after etching Flat and smooth, thickness tolerance less than or equal to 0.2um, etch rate greater than or equal to 4.00um / min, with good dispersion, wetting and sedimentation functions, which can solve the problem of uneven etching powder residue, suspension in the solution, and adsorption on the surface of the wafer after etching. It can effectively inhibit the volatilization of acid and the loss of etching acid, and the smell is mild and non-irritating.

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