Silicon crystal pulling process method for monocrystalline silicon

A process method, single crystal silicon technology, applied in the direction of single crystal growth, single crystal growth, chemical instruments and methods, etc., can solve the problems of limited effective length range of resistivity, low minority carrier lifetime, fast attenuation speed, etc., and achieve improvement The effect is obvious, the effect of reducing oxygen is obvious, and the effect of increasing the lifespan of the minority

Active Publication Date: 2021-11-16
LONGI GREEN ENERGY TECH CO LTD
View PDF7 Cites 6 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] This solution aims to solve the problems that the axial resistivity decay speed of single crystal doped with dopants (especially volatile dopants, such as gallium) is fast, the effective length range of resistivity is limited in principle, the increase of oxygen content and the The issue of low life expectancy

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Silicon crystal pulling process method for monocrystalline silicon
  • Silicon crystal pulling process method for monocrystalline silicon
  • Silicon crystal pulling process method for monocrystalline silicon

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0139] The single crystal silicon crystal growth process (CZ method) doped with gallium is as follows:

[0140] During the melting stage, keep the furnace pressure at 11-15Torr (pressure unit, 1Torr is 1mmHg), and the argon gas flow at 100slpm (stard liter per minute, that is, the standard liter per minute flow value).

[0141] In the stages of temperature adjustment, seeding, and shouldering, keep the furnace pressure at 11-15torr.

[0142] In the equal-diameter stage, the furnace pressure is gradually reduced to 0-10Torr as the length of the ingot increases. The entire isometric process is automatically controlled by the system, and the furnace pressure is controlled by adjusting the argon flow and / or the frequency of the dry pump. The parameters are shown in Table 1 below:

[0143] Table 1

[0144] Equal diameter length (mm) Furnace pressure (Torr) 0 11-15 150 10-14 250 8-12 350 6-10 600 4-8 1500 3-7 2500 2-6 3250 2-6 ...

Embodiment 2

[0158] The single crystal silicon crystal growth process (CZ method) doped with gallium is as follows:

[0159] During the melting stage, temperature adjustment stage, seeding stage, and shouldering stage of crystal growth, the furnace pressure of the single crystal furnace is kept at 11-15 Torr, and the flow rate of argon gas is 100 slpm.

[0160] In the equal diameter stage, the percentage of the equal diameter length of the ingot and the furnace pressure of the single crystal furnace are controlled according to Table 2 below, and the furnace pressure is controlled to correspond to each other by adjusting the flow rate of argon gas and / or the frequency of the dry pump.

[0161] Table 2

[0162] Percentage of isometric length Furnace pressure (Torr) 0％ 10 4％ 7 7％ 5 10％ 4 18％ 3 44％ 2 74％ 2 96％ 2 100％ 2

Embodiment 3

[0169] The single crystal silicon crystal growth process (CZ method) doped with gallium is as follows:

[0170] During the melting stage, temperature adjustment stage, seeding stage, and shouldering stage of crystal growth, the furnace pressure of the single crystal furnace is maintained at 11-15 Torr, and the argon gas flow rate is 100 slpm.

[0171] In the equal-diameter stage, according to the following table 3, the percentage of the equal-diameter length of the ingot is controlled to be L, the furnace pressure U of the single crystal furnace, the flow rate of argon gas P, and the frequency of the dry pump to make them correspond to each other, and always maintain that they meet U=A *L+B*P+D*F+C,

[0172] Among them, 5≤A≤10, 0.01≤B≤0.02, -0.6≤D≤-0.2, 15≤C≤20.

[0173] Among them, the value of furnace pressure is in the range of 2Torr≤U≤10Torr, the value of argon gas flow is in the range of 50slpm≤P≤70slpm; the value of dry pump frequency is in the range of 20HZ≤F≤60HZ

[...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
diameteraaaaaaaaaa
electrical resistivityaaaaaaaaaa
electrical resistivityaaaaaaaaaa
Login to view more

Abstract

The invention provides a crystal pulling process method for monocrystalline silicon doped with a volatile dopant, and the crystal pulling process method comprises the following steps: in an equal-diameter stage of crystal growth, a single crystal furnace adopts low furnace pressure not exceeding 18Torr, and the flow of argon introduced into the single crystal furnace is kept in a constant range. The method realizes equal-diameter crystal pulling under lower furnace pressure. By means of the process method, the axial resistivity attenuation slope of the single crystal doped with the volatile dopant, especially gallium, can be reduced, and the effective length of the resistivity of the single crystal can be increased.

Description

technical field [0001] The present application belongs to the technical field of single crystal silicon growth, and in particular relates to a CZ pulling single crystal silicon crystal pulling process method doped with dopants (including volatile dopants) with a given target resistivity, in particular to gallium-doped monocrystalline silicon Crystal silicon pulling process method. In the crystal growth process, the accuracy of the head resistivity of the ingot is controlled to improve production efficiency and yield. Background technique [0002] With the environmental crisis caused by global climate change and the energy crisis caused by the excessive exploitation of fossil energy, people pay more and more attention to the development of clean energy, and photovoltaic power generation, as the most representative clean energy, has been increasingly valued and vigorously develop. [0003] At present, the main basic material of photovoltaic power generation is gallium-doped ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C30B15/20C30B29/06
CPCC30B15/20C30B29/06Y02P70/50
Inventor 邓浩谢志宴靳乾
Owner LONGI GREEN ENERGY TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap