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Thermosensitive resistor, chip material and preparation method thereof

A technology for thermistors and chip materials, applied in thermistors, manufacturing resistor chips, resistors, etc., to achieve high precision and improve compactness

Active Publication Date: 2021-11-19
KAITE ELECTRONICS YUNMENG +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] But at present, the resistance value of similar products in China has an annual drift rate of ≥1%.
In some fields (such as medical equipment) that require relatively high temperature control accuracy, it is far from meeting the requirements

Method used

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  • Thermosensitive resistor, chip material and preparation method thereof

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preparation example Construction

[0021] This specific embodiment also proposes the preparation method of above-mentioned chip material, comprises the following steps:

[0022] S1. Mix the components according to the ratio and ball mill at a speed of 240-250 cycles / min for 8-9 hours to obtain the first mixture; ball mill to mix the various raw materials evenly;

[0023] S2. Dry the first mixture at 100-120°C, then heat up to 500-600°C for the first calcination for 2-3 hours, then continue to heat up to 900-1000°C for the second calcination for 1-1.5 hours, then lower the temperature to 500-600°C for 2-3 hours, then cut off the power and cool down to obtain the second mixture;

[0024] S3. The second mixture is made into an intermediate by a wet casting process; specifically, the wet casting process includes: adding PVA glue to the second mixture, forming a slurry after stirring, and using a casting machine Casting 2-3 times to obtain the rubber block, cutting the prepared rubber block into 15cm×15cm squares, ...

Embodiment 1

[0029] This embodiment proposes a chip material, which includes: 40% of manganese tetraoxide; 37% of tricobalt tetroxide; 15% of aluminum oxide; 8% of chromium oxide, 100% in total.

[0030] This embodiment also proposes the preparation method of the chip material, comprising the following steps:

[0031] S1. Mix the components according to the ratio and ball mill at a speed of 240 cycles / min for 9 hours to obtain the first mixture;

[0032] S2. Dry the first mixture at 100°C, then raise the temperature to 500°C for the first calcination for 2 hours, then continue to raise the temperature to 900°C for the second calcination for 1 hour, then lower the temperature to 500°C and keep it for 2 hours , then turn off the power and cool down to obtain the second mixture; in this step, the heating rate is 10°C / min, and the cooling rate is 5°C / min;

[0033] S3. The second mixture is made into an intermediate by a wet casting process; specifically, the wet casting process includes: addi...

Embodiment 2

[0036] This embodiment proposes a chip material, which includes: 50% manganese tetraoxide; 30% cobalt tetroxide; 18% aluminum oxide; 2% chromium oxide, 100% in total.

[0037] This embodiment also proposes the preparation method of the chip material, comprising the following steps:

[0038] S1. Mix the components according to the ratio and ball mill at a speed of 250 cycles / min for 8.5 hours to obtain the first mixture;

[0039] S2. Dry the first mixture at 110°C, then raise the temperature to 600°C for the first calcination for 3 hours, then continue to raise the temperature to 950°C for the second calcination for 1.5 hours, then lower the temperature to 600°C and keep it for 3 hours , then turn off the power and cool down to obtain the second mixture; in this step, the heating rate is 5°C / min, and the cooling rate is 8°C / min;

[0040] S3. The second mixture is made into an intermediate by a wet casting process; specifically, the wet casting process includes: adding PVA glue...

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Abstract

The invention discloses a thermosensitive resistor, a chip material and a preparation method thereof, which belong to the technical field of electronic components. The chip material comprises the following components in percentage by mass: 40%-50% of manganous-manganic oxide, 30%-40% of cobaltosic oxide, 10%-20% of aluminum oxide, and 2%-8% of chromium oxide with the total percentage being 100%. The preparation method comprises the following steps of mixing the components according to the ratio, and carrying out ball milling to obtain a first mixture, drying the first mixture, then raising the temperature to 500-600 DEG C for calcining, then continuing to raise the temperature to 900-1000 DEG C for calcining, and then cooling to 500-600 DEG C for heat preservation to obtain a second mixture, preparing the second mixture into an intermediate by adopting a wet tape casting process, and heating the intermediate to 500-600 DEG C, carrying out heat preservation, continuously heating, and cooling to obtain the chip material. The annual drift rate of the chip material is less than 0.1%, and the precision is high.

Description

technical field [0001] The invention relates to the technical field of electronic components, in particular to a thermistor, a chip material and a preparation method thereof. Background technique [0002] Negative temperature coefficient thermistor is a semiconductor ceramic element made of high-purity transition metal oxides as the main material. It is made of metal oxides such as manganese, cobalt, nickel and copper, and is manufactured by ceramic technology. of. These metal oxide materials all have semiconductor properties, because they are completely similar to semiconductor materials such as germanium and silicon in terms of conductivity. When the temperature is low, the number of carriers (electrons and holes) of these oxide materials is small, so the resistance value is high; as the temperature increases, the number of carriers increases, so the resistance value decreases. Therefore, it has the characteristic that the resistance value changes correspondingly with th...

Claims

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Application Information

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IPC IPC(8): H01C7/04H01C17/00H01C17/30H01C1/024H01C7/00
CPCH01C7/04H01C7/047H01C7/008H01C1/024H01C17/00H01C17/006H01C17/30
Inventor 杨幼斌郑传发郑海法李鄂胜张先锋
Owner KAITE ELECTRONICS YUNMENG
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