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High-integration high-reliability IGBT power module and manufacturing method thereof

A technology of power modules and manufacturing methods, applied in semiconductor/solid-state device manufacturing, electrical components, electrical solid-state devices, etc., can solve the problems of poor high-voltage resistance performance of IGBT modules, complex heat dissipation measures, and low assembly density, and achieve quality consistency Good, meet the technical development and market demand, the effect of high assembly density

Pending Publication Date: 2021-11-26
CHINA ZHENHUA GRP YONGGUANG ELECTRONICS CO LTD STATE OWNED NO 873 FACTORY
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The invention aims to solve the problems of poor high-voltage resistance performance, low assembly density, complex heat dissipation measures and low reliability of existing IGBT modules.

Method used

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  • High-integration high-reliability IGBT power module and manufacturing method thereof
  • High-integration high-reliability IGBT power module and manufacturing method thereof

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Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0031] Such as figure 2 As shown, the specific implementation is as follows:

[0032] The bonding wire is a silicon-alumina wire with a diameter of 500 microns.

[0033] The number of bonding wires is 1 grid, and 4-10 collectors and emitters.

[0034] The metal bottom plate is rectangular, the four corners of the metal bottom plate are provided with metal bottom plate fixing holes, and the metal bottom plate and the module shell are fixed together by rivets.

[0035] The module shell is made of PBT engineering plastic, which has high temperature resistance and low mass.

[0036] The wire mesh is a wire mesh.

[0037] The substrate welding or chip welding is reflow welding or alloy welding.

[0038] The specific production process is:

[0039] (1) screen printing, the solder paste is printed on the surface of the multilayer ceramic substrate according to the set pattern, and the preliminary preparation is done for the patch, and the screen is a barbed wire;

[0040] (2) ...

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Abstract

The invention discloses a high-integration and high-reliability IGBT power module and a manufacturing method thereof. The high-integration and high-reliability IGBT power module comprises a metal bottom plate, metal bottom plate fixing holes, a multilayer wiring ceramic left half bridge substrate, a multilayer wiring ceramic switching substrate, a multilayer wiring ceramic right half bridge substrate, module pins, bonding wires, four IGBT chips and four diode chips which form an H bridge circuit structure. Process technologies such as mounting and bonding of a metal bottom plate, a multilayer ceramic substrate and a bare chip, metal fixed connection and the like are comprehensively adopted, a multilayer wiring ceramic left half bridge substrate, a multilayer wiring ceramic switching substrate and a multilayer wiring ceramic right half bridge substrate are mounted and welded on the metal bottom plate, and four IGBT chips and four diode chips are mounted and welded on corresponding substrates according to a design layout. The problems that an existing IGBT module is poor in high voltage resistance, low in assembly density, complex in heat dissipation measure and low in reliability are solved. The module is widely applied to the packaging process of semiconductor power devices.

Description

technical field [0001] The invention belongs to the technical field of semiconductor power modules, and in particular relates to a highly integrated and highly reliable IGBT power module structure and a manufacturing method thereof. Background technique [0002] Insulated Gate Bipolar Transistor (IGBT) is the most mainstream and core power semiconductor device at present. , referred to as MOSFET) and bipolar junction transistor (BJT) composite full-control-voltage-driven-power semiconductor device, which combines the advantages of insulated gate field effect transistors and bipolar junction transistors, is currently the best power Semiconductor power electronic devices. Due to the lower saturation conduction voltage of IGBT, large current carrying density, small driving power and fast switching speed, it is widely used in power systems, railway systems, traffic control, frequency converters, power conversion, industrial motors, UPS uninterruptible power supplies, wind power...

Claims

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Application Information

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IPC IPC(8): H01L23/538H01L23/367H01L23/373H01L25/18H01L21/768
CPCH01L23/5386H01L23/3677H01L23/3736H01L23/3731H01L25/18H01L25/50
Inventor 孟繁新王博陈侃周斌江加丽冉龙玄张亮
Owner CHINA ZHENHUA GRP YONGGUANG ELECTRONICS CO LTD STATE OWNED NO 873 FACTORY
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