Polycrystalline silicon material
A polysilicon and polysilicon block technology, which is applied in the growth of polycrystalline materials, silicon, silicon compounds, etc., can solve problems such as the influence of the resistivity of single crystal silicon
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Embodiment 1
[0160] The polysilicon raw material is produced by the Siemens method. As raw material gas, purified trichlorosilane and hydrogen with high purity were used.
[0161] As the purified trichlorosilane, what was produced by the method shown below was used. First, low-purity crude trichlorosilane is obtained by reacting metallurgical-grade low-purity silicon called metal silicon with hydrogen chloride, and metal silicon with tetrachlorosilane and hydrogen.
[0162] In the metal silicon as the raw material of crude trichlorosilane, B, Al, P, and As are mixed in the ratio of hundreds of ppb to several hundreds of ppm, respectively, in the reaction of metal silicon and hydrogen chloride, and metal silicon and tetrachlorosilane and hydrogen During the reaction, each dopant component is also chlorinated and mixed into the crude trichlorosilane.
[0163] Therefore, the obtained crude trichlorosilane was purified by distillation, and B, P, Al and As in the crude trichlorosilane were se...
Embodiment 2
[0208]Synthesis, distillation purification, recovery purification, and precipitation of polycrystalline silicon were performed in the same manner as in Example 1. The concentration of dichlorosilane in the recovered and purified trichlorosilane at this time was measured by gas chromatography and found to be 900 ppmw.
[0209] The polycrystalline silicon obtained after the precipitation was analyzed by the same method as in Example 1. The average resistivity was 1700 [Ωcm]. The main B concentration is 2 [ppta], and the main Al concentration is less than 1 [ppta] which is the lower limit of quantification. The bulk Al concentration is assumed to be 0 [ppta], and the bulk acceptor concentration is assumed to be 2 [ppta]. The main P concentration is 51 [ppta], and the main As concentration is 3 [ppta]. Therefore, the bulk donor concentration is 54 [ppta].
[0210] Next, in the same manner as in Example 1, the obtained polycrystalline silicon rods were crushed, sorted into grai...
Embodiment 3
[0225] Synthesis, distillation purification, recovery purification, and precipitation of polycrystalline silicon were performed in the same manner as in Example 1. The concentration of dichlorosilane in the recovered and purified trichlorosilane at this time was measured by gas chromatography and found to be 200 ppmw.
[0226] The polycrystalline silicon obtained after the precipitation was analyzed by the same method as in Example 1. The average resistivity was 8300 [Ωcm]. The main B concentration is 2 [ppta], and the main Al concentration is less than 1 [ppta] which is the lower limit of quantification. The bulk Al concentration is assumed to be 0 [ppta], and the bulk acceptor concentration is assumed to be 2 [ppta]. The main P concentration is 11 [ppta], and the main As concentration is 2 [ppta]. Therefore, the host donor concentration is 13 [ppta].
[0227] Next, in the same manner as in Example 1, the obtained polycrystalline silicon rods were crushed, sorted into gra...
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