Preparation method of ultrahigh-purity copper-manganese alloy

Abstract

The invention provides a preparation method of an ultra-high-purity copper-manganese alloy, which adopts electron beam melting to prepare the ultra-high-purity copper-manganese alloy. The preparation method of the ultra-high-purity copper-manganese alloy comprises the following steps: carrying out acid pickling and mixing on an ultra-high-purity copper raw material and a manganese raw material, carrying out hot isostatic pressing to obtain an ultra-high-purity copper-manganese alloy blank, and carrying out electron beam melting and dummy ingot on the blank to obtain the ultra-high-purity copper-manganese alloy. According to the preparation method of the ultra-high-purity copper-manganese alloy, hot isostatic pressing is adopted to promote uniform mixing of the raw materials, and metal loss in the electron beam melting process is reduced; the double electron guns are used for smelting, refining of an ultrahigh-purity copper-manganese alloy solution can be achieved while the ultrahigh-purity copper-manganese alloy blank is smelted, the mixing effect is achieved in the process that the blank is dropped into the water-cooling copper crucible after being smelted, and the ultrahigh-purity copper-manganese alloy is more uniform; compared with traditional vacuum induction melting, carbon particle inclusions of the ultrahigh-purity copper-manganese alloy obtained through electron beam melting are reduced, and it can be ensured that the sputtering performance of the prepared target material is stable in the sputtering process; and the preparation method of the ultra-high-purity copper-manganese alloy has the advantages of simple process operation and wide applicability.

Description

technical field [0001] The invention belongs to the field of manufacturing ultra-high-purity copper-manganese alloy targets, and in particular relates to a preparation method of ultra-high-purity copper-manganese alloys. Background technique [0002] With the rapid development of ultra-large-scale integrated circuits, the size of semiconductor chips has been reduced to the nanometer level, and the RC delay and electromigration of metal interconnections have become the main factors affecting chip performance. Traditional aluminum and aluminum alloy interconnections are no longer available. It can meet the requirements of VLSI process. Compared with aluminum, copper has higher resistance to electromigration and higher electrical conductivity. Among them, copper with a purity ≥ 6N is called Ultra High Purity Copper (UHPC), and its impurity content is ≤ 1ppm, so It has the smallest grain boundary area and few internal lattice defects, so that ultra-high-purity copper has excell...

AI Technical Summary

Problems solved by technology

On the one hand, the Mn element will volatilize, which will lead to uneven alloy composition; on the other hand, the high-purity graphite crucible is used in the vacuum induction melting process, and the alloy solution will wash the graphite crucible, resulting in the inclusion of carbon particles in the alloy.

Images