Preparation method of ultrahigh-purity copper-manganese alloy

A manganese alloy and pure copper technology, which is applied in the field of ultra-high-purity copper-manganese alloy target manufacturing, can solve problems such as uneven alloy composition and alloy carbon particle inclusions, and achieve uniform ultra-high-purity copper-manganese alloys and reduced carbon particle inclusions , wide applicability

Pending Publication Date: 2021-12-03
KONFOONG MATERIALS INTERNATIONAL CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

On the one hand, the Mn element will volatilize, which will lead to uneven alloy composition; on the other hand, the high-purity graphite crucible is used i

Method used

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  • Preparation method of ultrahigh-purity copper-manganese alloy
  • Preparation method of ultrahigh-purity copper-manganese alloy
  • Preparation method of ultrahigh-purity copper-manganese alloy

Examples

Experimental program
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Example Embodiment

[0066] Example 1

[0067] The present embodiment provides a method for preparing ultra pure copper-manganese alloy, said process comprising the steps of:

[0068] (1) The purity of 30wt% nitric acid aqueous solution as the pickling solution, respectively ultrahigh purity copper of 99.9999wt% purity of the electrolyte sheet and 99.999wt% electrolytic manganese sheet was pickled, and then mixing the two starting materials temperature of hot isostatic pressing, hot isostatic pressing of the control 900 ℃, pressure of 200MPa, holding time for 5.5 h, to obtain the Mn content of 0.5wt% of ultra-high pure copper-manganese alloy ingot, and said ultra high purity copper-manganese alloy billet having a diameter of 200mm, a cylindrical height of 1000mm;

[0069] (2) The step (1) of the ultra-high manganese copper alloy billet is fixed immediately above the electron beam melting furnace after the water-cooled copper crucible, the electron beam melting furnace evacuated to a vacuum degree of 5...

Example Embodiment

[0071] Example 2

[0072] The present embodiment provides a method for preparing ultra pure copper-manganese alloy, said process comprising the steps of:

[0073] (1) The purity of 32wt% nitric acid aqueous solution as the pickling solution, respectively 99.99995wt% purity ultra high purity copper sheet and the electrolytic manganese 99.9995wt% electrolyte sheet was pickled, and then mixing the two starting materials hot isostatic pressing, to control the temperature of hot isostatic pressing of 850 ℃, pressure of 180MPa, holding time 6h, to obtain the Mn content of 0.1wt% of ultra-high pure copper-manganese alloy ingot, and said ultra-pure copper manganese alloy ingot having a diameter of 190mm, height 900mm cylindrical;

[0074] (2) The step (1) of the ultra-high manganese copper alloy billet is fixed immediately above the electron beam melting furnace after the water-cooled copper crucible, the electron beam melting furnace evacuated to a vacuum degree of 1 × 10 -4 PA, carried ...

Example Embodiment

[0076] Example 3

[0077] The present embodiment provides a method for preparing ultra pure copper-manganese alloy, said process comprising the steps of:

[0078] (1) The purity of 28wt% nitric acid aqueous solution as the pickling solution, respectively 99.99992wt% purity ultra high purity copper sheet and the electrolytic manganese 99.9995wt% electrolyte sheet was pickled, and then mixing the two starting materials temperature of hot isostatic pressing, hot isostatic pressing control is 950 deg.] C, a pressure of 190MPa, dwell time was 5h, to obtain the Mn content of 1.0wt% of ultra-high pure copper manganese alloy ingot, and said ultra-pure copper manganese alloy ingot having a diameter of 210mm, a height of the cylindrical 1100mm;

[0079] (2) The step (1) of the ultra-high manganese copper alloy billet is fixed immediately above the electron beam melting furnace after the water-cooled copper crucible, the electron beam melting furnace evacuated to a vacuum degree of 1 × 10 -3...

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Abstract

The invention provides a preparation method of an ultra-high-purity copper-manganese alloy, which adopts electron beam melting to prepare the ultra-high-purity copper-manganese alloy. The preparation method of the ultra-high-purity copper-manganese alloy comprises the following steps: carrying out acid pickling and mixing on an ultra-high-purity copper raw material and a manganese raw material, carrying out hot isostatic pressing to obtain an ultra-high-purity copper-manganese alloy blank, and carrying out electron beam melting and dummy ingot on the blank to obtain the ultra-high-purity copper-manganese alloy. According to the preparation method of the ultra-high-purity copper-manganese alloy, hot isostatic pressing is adopted to promote uniform mixing of the raw materials, and metal loss in the electron beam melting process is reduced; the double electron guns are used for smelting, refining of an ultrahigh-purity copper-manganese alloy solution can be achieved while the ultrahigh-purity copper-manganese alloy blank is smelted, the mixing effect is achieved in the process that the blank is dropped into the water-cooling copper crucible after being smelted, and the ultrahigh-purity copper-manganese alloy is more uniform; compared with traditional vacuum induction melting, carbon particle inclusions of the ultrahigh-purity copper-manganese alloy obtained through electron beam melting are reduced, and it can be ensured that the sputtering performance of the prepared target material is stable in the sputtering process; and the preparation method of the ultra-high-purity copper-manganese alloy has the advantages of simple process operation and wide applicability.

Description

technical field [0001] The invention belongs to the field of manufacturing ultra-high-purity copper-manganese alloy targets, and in particular relates to a preparation method of ultra-high-purity copper-manganese alloys. Background technique [0002] With the rapid development of ultra-large-scale integrated circuits, the size of semiconductor chips has been reduced to the nanometer level, and the RC delay and electromigration of metal interconnections have become the main factors affecting chip performance. Traditional aluminum and aluminum alloy interconnections are no longer available. It can meet the requirements of VLSI process. Compared with aluminum, copper has higher resistance to electromigration and higher electrical conductivity. Among them, copper with a purity ≥ 6N is called Ultra High Purity Copper (UHPC), and its impurity content is ≤ 1ppm, so It has the smallest grain boundary area and few internal lattice defects, so that ultra-high-purity copper has excell...

Claims

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Application Information

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IPC IPC(8): C22B9/22C22B9/04C22C1/02C22C9/05C23G1/10B22F3/15
CPCC22B9/228C22B9/04C22C1/02C22C9/05C23G1/103C23G1/10B22F3/15Y02P10/25
Inventor 姚力军潘杰边逸军王学泽慕二龙汪焱斌
Owner KONFOONG MATERIALS INTERNATIONAL CO LTD
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