Solar cell buffer layer and preparation method thereof
A technology for solar cells and buffer layers, applied in the field of solar cells, can solve problems such as poor film quality, and achieve the effects of short reaction time, reduced production costs, and improved surface quality
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Embodiment 1
[0055] 1) Washing the CIGS absorbing layer used as the growth substrate in an organic solvent and clear water respectively, wherein the Ga content in the CIGS absorbing layer is about 0.3.
[0056] 2) 45mL of 1mol / L zinc sulfate concentrated solution and 45mL of 1mol / L trisodium citrate concentrated solution are uniformly mixed in 740mL aqueous solution, then add ammonia water with a mass fraction of 25% while stirring, and increase the amount of ammonia water according to the real-time monitoring value of pH. Dosage. Then add 150 mL of 1 mol / L thiourea concentrated solution, and finally add 2-3 mL of water, so that the total volume of the mixed solution is 1000 mL, and the final pH value of the solution is 10.5.
[0057] In the obtained mixed solution, the concentration of zinc sulfate is 0.045 mol / L, the concentration of sodium citrate is 0.045 mol / L, the concentration of thiourea is 0.15 mol / L, and the pH value of the mixed solution is 10.5. Wherein, the molar ratio of zin...
Embodiment 2
[0063] The preparation method is the same as that of Example 1, except that the concentration of the sulfur source is changed so that the molar ratio of the zinc source, complexing agent and sulfur source in the mixed solution is 1:1:6.7.
[0064] The prepared solar cell buffer layer is carried out electron microscope observation, and the obtained SEM figure is as follows: figure 2 shown by figure 2 It can be seen that the solar cell buffer layer prepared by the method of this embodiment has a smooth surface without pinhole defects, and the film has a high surface quality. The film thickness of the thin film was 80 nm.
[0065] The prepared solar cell buffer layer was tested for light transmittance, and the optical bandgap of the Zn(O,S) thin film was obtained by linear fitting of the absorption edge in the transmission spectrum of the sample. Among them, the average transmittance of the solar cell buffer layer is 79.77%, and the band gap Eg is 3.95eV.
[0066] Figure 1...
Embodiment 3
[0069] The preparation method is the same as that of Example 1, except that the zinc source concentration is 0.06 mol / L.
[0070] The prepared solar cell buffer layer is carried out electron microscope observation, and the obtained SEM figure is as follows: image 3 shown, with figure 1 In contrast, the film is uniform and continuous, there are almost no large particles in the field of view, and the surface quality of the film is better.
[0071] The prepared solar cell buffer layer was tested for light transmittance, and the optical bandgap of the Zn(O,S) thin film was obtained by linear fitting of the absorption edge in the transmission spectrum of the sample. Among them, the average transmittance of the solar cell buffer layer is 81.8%, and the band gap Eg is 3.95eV.
[0072] The prepared solar cell buffer layer was subjected to XPS test, wherein the ratio of O / (O+S) in the solar cell buffer layer was 0.69.
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