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Preparation method of sulfur antimony selenide thin film

A technology of antimony selenide and thin film, which is applied in the direction of coating, etc., can solve the problems of poor process repeatability, many crystal defects, poor crystallinity of thin film, etc., and achieve the effect of improving device performance, simple preparation process and uniform thickness

Pending Publication Date: 2021-12-07
HEBEI NORMAL UNIVERSITY OF SCIENCE AND TECHNOLOGY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Among them, the film prepared by the chemical bath deposition method has poor crystallinity and many crystal defects, the spray pyrolysis method is unevenly sprayed, the vacuum evaporation method requires high vacuum equipment, the film is easy to fall off, and the process repeatability is poor. The spin coating method is easy to cause particles, Easy to crack and peel off

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  • Preparation method of sulfur antimony selenide thin film
  • Preparation method of sulfur antimony selenide thin film
  • Preparation method of sulfur antimony selenide thin film

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preparation example Construction

[0035] A kind of preparation method of antimony sulfur selenide film provided by the invention comprises the following steps:

[0036] (1) Ethylenediamine and ethanedithiol are mixed at a volume ratio of 1:10, and then antimony selenide is added to the above mixed solution to obtain an electrodeposition solution;

[0037] (2) Add the electrodeposition liquid that step (1) makes in the electrolytic tank, place two conductive glasses vertically relative to the liquid level in the electrolytic tank, and keep the two conductive glasses parallel to each other;

[0038] (3) Carry out constant potential electrodeposition to two pieces of conductive glass, make the electrode surface on the conductive glass on the cathode deposit a layer of prefabricated film;

[0039] (4) heat-treating the conductive glass deposited with the prefabricated film in a nitrogen atmosphere, and naturally cooling to room temperature to obtain an antimony sulfur selenide thin film.

[0040] In the present i...

Embodiment 1

[0050] A preparation method of antimony sulfoselenide film, comprising the steps of:

[0051] (1) Use acetone, ethanol solution and deionized water to ultrasonically clean the ITO conductive glass for 15 minutes in sequence, and dry it for later use;

[0052] (2) Add 0.01g Sb 2 Se 3 Dissolve in a mixed solution of 7 ml of ethylenediamine and 0.7 ml of ethanedithiol, and stir at room temperature until Sb 2 Se 3 Dissolve completely to obtain electrodeposition solution;

[0053] (3) Add electrodeposition solution into the electrolytic tank, use two ITO conductive glasses with a size of 1cm×2cm as working electrodes, place the two conductive glasses vertically relative to the liquid surface in the electrolytic tank, and keep the two conductive glasses mutually parallel;

[0054] (4) Carry out constant potential deposition to two ITO conductive glasses with a potentiostat, the deposition voltage is 4V, and the deposition time is 5min. After the deposition is over, a layer of u...

Embodiment 2

[0057] A preparation method of antimony sulfoselenide film, comprising the steps of:

[0058] (1) Use acetone, ethanol solution and deionized water to ultrasonically clean the FTO conductive glass for 15 minutes in sequence, and dry it for later use;

[0059] (2) Add 0.03g Sb 2 Se 3 Dissolve in a mixed solution of 7 ml of ethylenediamine and 0.7 ml of ethanedithiol, and stir at room temperature until Sb 2 Se 3 Dissolve completely to obtain electrodeposition solution;

[0060] (3) Add electrodeposition solution into the electrolytic tank, use two ITO conductive glasses with a size of 1cm×2cm as working electrodes, place the two conductive glasses vertically relative to the liquid surface in the electrolytic tank, and keep the two conductive glasses mutually parallel;

[0061] (4) Carry out constant potential deposition to two ITO conductive glasses with a potentiostat, the deposition voltage is 2V, and the deposition time is 10min. After the deposition is over, a layer of ...

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Abstract

The invention discloses a preparation method of a sulfur antimony selenide thin film, wherein the preparation method comprises the steps that: antimony selenide is added into a mixed solution of ethanediamine and ethanedithiol to prepare an electro-deposition solution, and constant-potential electro-deposition is carried out in the electro-deposition solution through conductive glass, so that a layer of prefabricated film is deposited on the surface of an electrode on the conductive glass positioned on a cathode; and then the conductive glass deposited with the prefabricated film is subjected to heat treatment in nitrogen atmosphere to obtain the antimony sulfide selenide thin film. According to the preparation method of the antimony selenide thin film, the deposition thickness and the chemical composition of substances deposited on the conductive glass can be accurately controlled; the sulfur antimony selenide thin film obtained by the method also has the advantages of uniform thickness, difficulty in falling, simple preparation process, easiness in operation and the like; and meanwhile, the forbidden band width of the Sb2SexS3-X thin film can be regulated and controlled by changing the adding content of Sb2Se3 in the electro-deposition solution, and then the performance of a device applying the thin film prepared through the method is improved.

Description

technical field [0001] The invention belongs to the field of functional materials, and in particular relates to a preparation method of an antimony sulfur selenide thin film. Background technique [0002] due to Sb 2 S 3 It is rich in content in the earth's crust, safe and non-toxic, so it has a wide range of applications in the fields of catalysis and solar energy. Sb 2 S 3 The bandgap width of Sb is relatively large, about 1.7eV, so the device prepared by it will have a relatively high open circuit voltage, but the Sb 2 S 3 Excessive bandgap of the film will also reduce the light utilization rate of the film, narrow the photoresponse range, and the short-circuit current density will be correspondingly small, thus limiting the performance of the device to a certain extent. Although, Sb can be improved by increasing the thickness of the absorbing layer and band engineering 2 S 3 The light absorption intensity of the thin film, but increasing the thickness of the absor...

Claims

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Application Information

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IPC IPC(8): C03C17/34
CPCC03C17/3464C03C2218/115C03C2218/32
Inventor 侯文龙陆蕾张文婧张建平尹庚文杨越冬张海全
Owner HEBEI NORMAL UNIVERSITY OF SCIENCE AND TECHNOLOGY
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