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Electrochemical transistor sensor based on Ti3C2-MXene channel, preparation method of electrochemical transistor sensor, and method for detecting nitrite

A nitrite and transistor technology, applied in the direction of material electrochemical variables, scientific instruments, instruments, etc., can solve the problems of low band gap, low detection limit, low signal, etc., and achieve fast response, low detection limit and high sensitivity Effect

Pending Publication Date: 2021-12-07
HUBEI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, accurate measurement of trace nitrite to meet the increasing environmental safety requirements remains a major challenge due to its low enough detection limit
Alternatively, a graphene transistor sensor was also used to detect nitrite, but the graphene channel had a lower signal due to its lower bandgap.

Method used

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  • Electrochemical transistor sensor based on Ti3C2-MXene channel, preparation method of electrochemical transistor sensor, and method for detecting nitrite
  • Electrochemical transistor sensor based on Ti3C2-MXene channel, preparation method of electrochemical transistor sensor, and method for detecting nitrite
  • Electrochemical transistor sensor based on Ti3C2-MXene channel, preparation method of electrochemical transistor sensor, and method for detecting nitrite

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0039] Based on small size ultra-thin Ti 3 C 2 -The preparation method of the nitrite electrochemical transistor sensor of MXene channel, concrete steps are as follows:

[0040] The first step is to plate chromium and gold on the glass substrate in sequence by evaporation coating method. The thickness of chromium is about 0.4nm, and the thickness of gold is about 30nm. The source and drain are respectively set. the electrochemical transistor sensor channel;

[0041] The second step is to configure 0.5mg / ml Ti 3 C 2 -Dispersion of MXene, take 10μl of its solution and drop-coat it between the source and drain, the drop-coating area is 12mm 2 , to form channels after drying.

[0042] The third step is to drop-coat 10 μl of Ti with a concentration of 0.5 mg / ml on the polished and cleaned disc glassy carbon electrode with a diameter of 3 mm. 3 C 2 -MXene with a drop coating area of ​​7mm 2 , placed in HAuCl after drying 4 In the precursor solution with a concentration of 1...

Embodiment 2

[0055] Based on small size ultra-thin Ti 3 C 2 -The preparation method of the nitrite electrochemical transistor sensor of the MXene channel, the specific steps are different from the embodiment 1 in that: the number of electrodeposition circles in the third step is 15 circles.

[0056] The above-mentioned method for detecting nitrite by the electrochemical transistor sensor, the specific process differs from that of Example 1 in that: after dropping nitrite solutions of different concentrations, the corresponding relationship between the concentration of nitrite and the equilibrium current is shown in Table 2. Show:

[0057] Table 2

[0058] C(nM) 1 10 50 1×10 2

[0059] With the change value ΔI of the channel current as the ordinate and the logarithmic value of the nitrite concentration as the abscissa, the working curve for the detection of nitrite by the electrochemical transistor sensor is established as Figure 7 Shown, ΔI=1.024lgC+0.477, R 2 =0.976(1 ...

Embodiment 3

[0061] Based on small size ultra-thin Ti 3 C 2 -The preparation method of the nitrite electrochemical transistor sensor of -MXene channel, the difference of concrete steps and embodiment 1 is: in the second step, the Ti that is drip-coated on the glassy carbon electrode 3 C 2 - MXene concentration is 1 mg / ml.

[0062] The above-mentioned method for detecting nitrite by the electrochemical transistor sensor, the specific process differs from that of Example 1 in that: after dripping nitrite solutions of different concentrations, the corresponding relationship between the concentration of nitrite and the equilibrium current is shown in Table 3. Show:

[0063] table 3

[0064] C(nM) 1 10 50 1×10 2

5×10 2

1×10 3

5×10 3

1×10 4

5×10 4

1×10 5

5×10 5

1×10 6

5×10 6

ΔI(μA) 0.48 1.53 2.72 3.44 4.97 6.52 8.96 11.31 14.0 15.93 18.96 20.18 22.01

[0065] With the change value ΔI of the channel current as the ord...

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Abstract

The invention relates to an electrochemical transistor sensor based on a small-size ultrathin Ti3C2-MXene channel, which is used for realizing high-sensitivity detection on nitrite. The device comprises a source electrode, a drain electrode and a grid electrode, wherein the source electrode and the drain electrode are both a chromium layer and a gold layer, the gold layer is overlapped above the chromium layer, small-size ultrathin Ti3C2-MXene is used as a conducting channel between the source electrode and the drain electrode, and an AuNPs / MXene nano composite material is deposited on a glassy carbon electrode through cyclic voltammetry for functional modification to be used as the grid electrode. According to the device disclosed by the invention, a novel two-dimensional material Ti3C2-MXene with high metal conductivity and good chemical stability is adopted as a channel material, and a nitrite electrochemical transistor sensor is constructed. The transistor sensor has characteristics of high sensitivity, low detection limit and wide detection range when being used for detecting nitrite, and can realize accurate detection of liquid to be detected.

Description

technical field [0001] What the present invention relates to is a kind of ultra-thin Ti based on small size 3 C 2 -MXene channel electrochemical transistor and its preparation method, the detection method of nitrite, specifically the use of small size ultra-thin Ti 3 C 2 -MXene as a channel combined with AuNPs / MXene composite nanomaterial functionalized gate for nitrite detection. Background technique [0002] Nitrite is one of the most commonly detected substances in environmental analysis due to its harmful effects on the environment. It is very important to develop a simple and sensitive nitrite sensor. As a new electrochemical detection method, the electrochemical transistor sensor has high sensitivity due to its inherent amplification characteristics, and is considered to be a promising electroanalytical detection method. Currently the most studied nitrite sensors are traditional electrochemical sensors, which are widely used due to their inherent advantages of low...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N27/414G01N27/48
CPCG01N27/4146G01N27/48
Inventor 常钢涂博周瑞何云斌
Owner HUBEI UNIV