PtSx high-performance photoelectric device and preparation method and application thereof

An optoelectronic device, high-performance technology, applied in the direction of color/spectral property measurement, instrument, scientific instrument, etc., can solve the limited crystal size and price of platinum sulfide crystal, restrict the rapid progress of development and application, platinum sulfide material and device performance To achieve the effect of wide detection spectral range, large application potential and low cost

Active Publication Date: 2021-12-10
SHANDONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, high-quality platinum sulfide crystals are limited by their crystal size and price, which greatly limits their rapid development and application.
[0003] In order to quickly promote the rapid development and application of platinum sulfide materials and devices, researchers often use sulfur vapor to form sulfur vapor by evaporating sulfur powder to sulfide metal platinum to form platinum disulfide films or platinum sulfide films. The quality is poor, and the efficiency is low, and the performance of the prepared platinum sulfide materials and devices is poor, which greatly affects its application

Method used

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  • PtSx high-performance photoelectric device and preparation method and application thereof
  • PtSx high-performance photoelectric device and preparation method and application thereof
  • PtSx high-performance photoelectric device and preparation method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0049] A PtS x high-performance optoelectronic devices, such as figure 1 As shown, including substrate 1, PtS grown sequentially from bottom to top x Thin layer 2, two electrodes, PtS grown on the upper surface of substrate 1 x TLC 2, PtS x The upper surface of the thin layer 2 is provided with two electrodes, 1≤x≤2.

[0050] PtS x Thin layer 2 is made of PtS 2 and PtS complexes. A growth is formed.

[0051] PtS x Thin layer 2 has a thickness of 1-30 nm;

[0052]The spectral response range of the optoelectronic device is 200-1500nm.

[0053] Substrate 1 is sapphire or gallium nitride or silicon carbide.

[0054] The two electrodes include a first electrode 3 and a second electrode 4, and the first electrode 3 is any one of a Ti / Au composite electrode, a Ti / Al / Ni / Au composite electrode, and a Ti / Al / Pt / Au composite electrode, The second electrode 4 is any one of a Ti / Au combined electrode, a Ti / Al / Ni / Au combined electrode, and a Ti / Al / Pt / Au combined electrode. The ro...

Embodiment 2

[0056] According to a kind of PtS described in embodiment 1 x High-performance optoelectronic devices, the difference lies in:

[0057] PtS x Thin layer 2 has a thickness of 3-11 nm; substrate 1 is sapphire.

Embodiment 3

[0059] According to a kind of PtS described in embodiment 1 x High-performance optoelectronic devices, the difference lies in:

[0060] PtS x Thin layer 2 has a thickness of 11 nm.

[0061] PtS with a thickness of 11nm x Under the condition of thin layer 2, the optoelectronic performance of optoelectronic devices has been greatly improved, with wide spectral responsivity (ultraviolet to infrared range), low photodetection rate (9.17x10 9 Jones) and ultra-stable characteristics (only 26% reduction in photoelectric response for one year of storage in air), the performance is relatively good in platinum sulfide optoelectronic devices.

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Abstract

The invention relates to a PtSx high-performance photoelectric device and a preparation method and application thereof.The PtSx high-performance photoelectric device comprises a substrate, a PtSx thin layer and two electrodes which sequentially grow from bottom to top, the PtSx thin layer grows on the upper surface of the substrate, the two electrodes are arranged on the upper surface of the PtSx thin layer, x is larger than or equal to 1 and smaller than or equal to 2, and the PtSx thin layer is prepared through a chemical vapor deposition method. The patterned metal platinum thin layer is vulcanized under a high-temperature condition by utilizing mixed gas of hydrogen sulfide gas, hydrogen gas and argon gas. The photoelectric device is prepared through a patterned metal vulcanization and electrode deposition process, and the PtSx thin film and the photoelectric device can be prepared in a large area. The photoelectric device disclosed by the invention has the advantages of wide photoelectric response window, high photoelectric property, high stability, high detection sensitivity, ultrahigh external quantum efficiency, simplicity in manufacturing and low cost, and has great application potential in the fields of photoelectric devices, gas sensors and electronic devices.

Description

technical field [0001] The invention relates to a photoelectric device, in particular to a PtS x High-performance optoelectronic devices and their fabrication methods and applications. Background technique [0002] Platinum sulfide thin film materials and devices, as one of the emerging two-dimensional materials and devices in recent years, have always attracted the attention of researchers. Because its forbidden band width can be adjusted according to its thickness, wide spectral response, ultra-sensitive gas response and super-stable material properties in air, it has far-reaching application prospects in the fields of optoelectronic devices, gas detection and electronic information, and its growth process It is relatively simple and has higher stability, so it has received extensive attention. At present, high-quality platinum sulfide crystals are limited by their crystal size and price, which greatly limits their rapid development and application. [0003] In order to...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/04C23C14/14C23C14/30C23C16/30C23C28/00G01N21/01G01N21/31
CPCC23C14/042C23C14/30C23C14/14C23C16/305C23C28/322C23C28/34G01N21/31G01N21/01G01N2021/0112
Inventor 张宇韩琳张云红王彦皓
Owner SHANDONG UNIV
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