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A method for growing large-scale iv-vi compound single crystal thin film materials by pvd technology

An IV-VI, single crystal thin film technology, applied in chemical instruments and methods, single crystal growth, single crystal growth, etc., can solve the problems of unrealized large-scale GeSe single crystal thin films, restricted applications, experimental exploration limitations, etc. , to achieve the effect of low experimental cost, less consumables and low cost

Active Publication Date: 2022-07-08
CHONGQING INST OF GREEN & INTELLIGENT TECH CHINESE ACADEMY OF SCI +1
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the experimental preparation of large-scale GeSe single crystal thin films has not yet been realized, so the experimental exploration of the material's anisotropic current transport and material heterojunction and its array monolithic integration is limited, which restricts the development of this material. Further application of the material

Method used

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  • A method for growing large-scale iv-vi compound single crystal thin film materials by pvd technology
  • A method for growing large-scale iv-vi compound single crystal thin film materials by pvd technology
  • A method for growing large-scale iv-vi compound single crystal thin film materials by pvd technology

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Embodiment 1

[0037] Embodiment 1 of the present invention provides a method for growing a large-scale GeSe single crystal thin film material by PVD technology. The preparation is carried out in a single heating tube furnace. The specific structure is as follows figure 1 shown; with the increase of the length from the heating center, the change of the temperature gradient at each location is as follows figure 2 The schematic diagram of the temperature and airflow settings during the preparation and growth process is shown in Fig. image 3 shown.

[0038] Specifically include the following steps:

[0039] (1) The substrate selected for the preparation of the sample is a single crystal silicon wafer with surface polishing or a single crystal silicon wafer with surface polishing and oxidation; before preparing the sample, the substrate needs to be cleaned to remove surface impurities; the substrate is immersed in acetone, alcohol, Ultrasonic cleaning in deionized water for 10min respectivel...

Embodiment 2

[0045] The technical solution disclosed in Example 2 of the present invention is basically the same as that in Example 1, except that the high-purity GeSe (99.999%) polycrystalline powder is replaced with high-purity SnS (99.999%) polycrystalline powder.

Embodiment 3

[0047] The technical solution disclosed in Example 3 of the present invention is basically the same as Example 1, except that the high-purity GeSe (99.999%) polycrystalline powder is replaced with high-purity SnSe (99.999%) polycrystalline powder.

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Abstract

The invention discloses a method for growing large-scale IV-VI compound single crystal thin film materials by PVD technology, which specifically includes three main stages: the first stage is to prepare the material, and the weight of the polycrystalline powder source is optimized; The powder source and the substrate are placed in the quartz tube, and the positions of the powder source and the substrate in the quartz tube are set. The third stage uses physical vapor deposition technology to grow single crystal thin films. Time, substrate temperature, air flow velocity, large-scale and regular strip-shaped layered film materials were prepared, which laid an important technical foundation for the experimental preparation and application of large-scale IV-VI single crystal thin films.

Description

technical field [0001] The invention relates to the technical field of new materials, in particular to a method for growing large-scale IV-VI compound single crystal thin film materials by PVD technology. Background technique [0002] Graphene is composed of carbon atoms through SP 2 Hybridization of three carbon atoms close to it forms a 120° σ bond to form a honeycomb structure. The simple structure of graphene has many unique physical phenomena, including Dirac fermions, fractional and room temperature quantum Hall effects, minimal quantum conduction, and more. Graphene has many good properties, such as the lightest carrier mass, the highest current density, the longest mean free path at room temperature, the highest carrier mobility, etc. Among them, the ultra-high carrier mobility is Potential for developing fast electronic devices. However, the ultra-high mobility of graphene is caused by the zero band gap, and the lack of an intrinsic band gap results in a low on / o...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/48C30B23/06C30B23/02
CPCC30B29/48C30B23/063C30B23/002Y02P70/50
Inventor 王春香赵洪泉石轩张国欣张炜
Owner CHONGQING INST OF GREEN & INTELLIGENT TECH CHINESE ACADEMY OF SCI
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