Trace in-situ carbon-induced Si3N4 heat-conducting ceramic material and preparation method thereof

A heat-conducting ceramic, in-situ technology, applied in the field of ceramic materials, can solve the problems of reducing density, uneven distribution of carbon, increasing loss value, etc., to achieve the effect of reducing glass phase, reducing environmental pollution, and improving conversion rate

Active Publication Date: 2021-12-17
HUNAN UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The above technical scheme improves the Si 3 N 4 The mechanical properties and thermal conductivity of ceramic materials, but directly adding carbon is easy to distribute unevenly, and adding too much will reduce the density and increase the loss value

Method used

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  • Trace in-situ carbon-induced Si3N4 heat-conducting ceramic material and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0029] This example provides a trace in situ carbon-induced Si 3 N 4 A method for preparing a heat-conducting ceramic material, specifically comprising the following steps:

[0030] S1. Modification: Si 3 N 4 The powder is pickled in an acidic solution with a concentration of 3% HNO 3 And concentration is 3% HCl according to 1:1 configuration, then the powder of sedimentation and sintering aid (3wt% Y 2 o 3 and 5wt% MgO) in an alkaline solution for ball milling and aging. The alkaline solution is a 5% NaOH solution. Finally, the powder is washed with deionized water and dried to obtain modified Si 3 N 4 Mix powder with sintering aid;

[0031] S2. Molding: Add organic matter to the mixed powder obtained in step S1 and mix evenly, wherein the amount of organic matter is (relative to Si 3 N 4 Powder mass) 4wt%, organic matter is made by stirring evenly by 1wt% polyethylene glycol, 1.5wt% polyvinyl alcohol, 1wt% polyester, 0.5wt% polyamide according to mass ratio; Then th...

Embodiment 2

[0035] This example provides a trace in situ carbon-induced Si 3 N 4 A method for preparing a heat-conducting ceramic material, specifically comprising the following steps:

[0036] S1. Modification: Si 3 N 4 The powder is pickled in an acidic solution with a concentration of 4% HNO 3 solution, and then the settled powder and sintering aid (3wt% of Y 2 o 3 and 5wt% MgO) in an alkaline solution for ball milling and aging, and the alkaline solution has a concentration of 8% NH 4 OH solution, and finally the powder was washed with deionized water and then dried to obtain modified Si 3 N 4 Mix powder with sintering aid;

[0037] S2. Molding: Add organic matter to the mixed powder obtained in step S1 and mix evenly, wherein the amount of organic matter (relative to Si 3 N 4 Powder mass) is 5%wt, and the organic matter is made by stirring evenly according to the mass ratio of 1.5wt% polyethylene glycol, 1wt% polyacrylonitrile, and 2.5wt% polyvinyl alcohol; then the mixture...

Embodiment 3

[0041] This example provides a trace in situ carbon-induced Si 3 N 4 A method for preparing a heat-conducting ceramic material, specifically comprising the following steps:

[0042] S1. Modification: Si 3 N 4 The powder is pickled in an acidic solution with a concentration of 4% HNO 3 And concentration is 3% HCl according to 1:1 configuration, then the powder of sedimentation and sintering aid (3wt% Y 2 o 3 and 5wt% MgO) in an alkaline solution for ball milling and aging. The alkaline solution is a 4% NaOH solution. Finally, the powder is washed with deionized water and dried to obtain modified Si 3 N 4 Mix powder with sintering aid;

[0043] S2. Molding: Add organic matter to the mixed powder obtained in step S1 and mix evenly, wherein the amount of organic matter (relative to Si 3 N 4 Powder mass) is 5%wt, and the organic matter is made by stirring evenly according to the mass ratio of 1.2wt% polyethylene glycol, 1.5wt% polyethylene, and 1.3wt% polyamide; then the m...

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Abstract

The invention discloses a preparation method of a trace in-situ carbon-induced Si3N4 heat-conducting ceramic material. The ceramic material is prepared by taking Si3N4 powder, a sintering aid and an organic matter as raw materials through modification, molding, primary sintering and secondary sintering. High-activity, high-uniformity and controllable trace carbon is generated in situ through the organic matter at a certain temperature to realize in-situ distribution in a silicon nitride substrate, so that oxygen at a grain boundary is removed, a glass phase is reduced, the alpha-to-beta phase transformation rate is increased, the problems of deformation and cracking of a green body, limited lattice oxygen removal effect, non-uniform structure and the like caused by non-uniform distribution when carbon is directly added are solved, and the heat-conducting property and the strength of the Si3N4 heat-conducting ceramic material are improved.

Description

technical field [0001] The present invention relates to the technical field of ceramic materials, more specifically, to a trace in-situ carbon-induced Si 3 N 4 Thermally conductive ceramic material and preparation method. Background technique [0002] 5G communication has become the focus of a new round of competition in the information revolution of various countries in the 21st century, and it has urgent needs in aerospace, transportation, energy and other fields. Communication equipment integrated circuits are developing toward high frequency, high power, and miniaturization, but high frequency leads to serious signal transmission loss, and high power generates a lot of heat, which can easily cause circuit instability. As an integrated circuit substrate, it is required to have high thermal conductivity, high Thermal shock resistance and high strength toughness and other properties. Silicon nitride has the characteristics of high hardness, high strength, small thermal e...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/584C04B35/622C04B35/63C04B35/64C04B35/645
CPCC04B35/584C04B35/622C04B35/64C04B35/645C04B35/6303C04B2235/5248C04B2235/77C04B2235/9607C04B2235/96
Inventor 银锐明李鹏飞王雨铮刘为扬谢南卿
Owner HUNAN UNIV OF TECH
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